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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1PS193,115

1PS193,115

DIODE GP 80V 215MA SMT3 MPAK

NXP USA Inc.

7,868 -
1PS193,115

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 80 V 215mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 500 nA @ 80 V 1.5pF @ 0V, 1MHz - - Surface Mount SMT3; MPAK 150°C (Max)
1PS59SB10,115

1PS59SB10,115

DIODE SCHOT 30V 200MA SMT3 MPAK

NXP USA Inc.

8,897 -
1PS59SB10,115

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 30 V 200mA 800 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 25 V 10pF @ 1V, 1MHz - - Surface Mount SMT3; MPAK 125°C (Max)
1PS59SB20,115

1PS59SB20,115

DIODE SCHOT 40V 500MA SMT3 MPAK

NXP USA Inc.

2,883 -
1PS59SB20,115

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 40 V 500mA 550 mV @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 35 V 90pF @ 0V, 1MHz - - Surface Mount SMT3; MPAK 125°C (Max)
BAS216,135

BAS216,135

DIODE GEN PURP 75V 250MA SOD110

NXP USA Inc.

9,723 -
BAS216,135

数据表

- SOD-110 Tape & Reel (TR) Obsolete Standard 75 V 250mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 1 µA @ 75 V 1.5pF @ 0V, 1MHz - - Surface Mount SOD-110 150°C (Max)
1N5712

1N5712

RF DIODE SCHOTTKY 20V 250MW

Broadcom Limited

5,967 -
1N5712

数据表

- DO-204AH, DO-35, Axial Bulk Obsolete Schottky 20 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 1.2pF @ 0V, 1MHz - - Through Hole - -65°C ~ 200°C
1N5712#T25

1N5712#T25

SCHOTTKY 20V 250MW

Broadcom Limited

6,665 -
1N5712#T25

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Obsolete Schottky 20 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 1.2pF @ 0V, 1MHz - - Through Hole - -65°C ~ 200°C
CSD02060A

CSD02060A

DIODE SIL CARB 600V 3.5A TO220-2

Wolfspeed, Inc.

5,425 -

-

Zero Recovery™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 3.5A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 120pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CSD02060G

CSD02060G

DIODE SIL CARB 600V 3.5A TO263-2

Wolfspeed, Inc.

5,130 -

-

Zero Recovery™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 3.5A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 120pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
CSD04060E

CSD04060E

DIODE SIL CARB 600V 7A TO252-2

Wolfspeed, Inc.

7,378 -

-

Zero Recovery™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 7A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 220pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
CSD06060A

CSD06060A

DIODE SIL CARB 600V 10A TO220-2

Wolfspeed, Inc.

3,497 -

-

Zero Recovery™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 340pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CSD06060G

CSD06060G

DIODE SIL CARB 600V 10A TO263-2

Wolfspeed, Inc.

9,355 -

-

Zero Recovery™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 340pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
CSD10060A

CSD10060A

DIODE SIL CARB 600V 16.5A TO220

Wolfspeed, Inc.

2,282 -

-

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 16.5A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 550pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CSD10060G

CSD10060G

DIODE SIL CARB 600V 16.5A TO263

Wolfspeed, Inc.

5,344 -

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 16.5A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 550pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
C2D05120A

C2D05120A

DIODE SIL CARB 1.2KV 17.5A TO220

Wolfspeed, Inc.

9,877 -

-

Zero Recovery™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 17.5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 455pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
C2D10120A

C2D10120A

DIODE SIL CARB 1.2KV 31A TO220-2

Wolfspeed, Inc.

7,352 -

-

Zero Recovery™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 31A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1000pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
BAS16WE6433HTMA1

BAS16WE6433HTMA1

DIODE GEN PURP 80V 250MA SOT323

Infineon Technologies

5,131 -
BAS16WE6433HTMA1

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete Standard 80 V 250mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 1 µA @ 75 V 2pF @ 0V, 1MHz - - Surface Mount PG-SOT323 150°C (Max)
BAT 60B E6433

BAT 60B E6433

DIODE SCHOTTKY 10V 3A SOD323-2

Infineon Technologies

9,597 -
BAT 60B E6433

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 10 V 3A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 25 µA @ 8 V 30pF @ 5V, 1MHz - - Surface Mount PG-SOD323-3D 150°C (Max)
IDH04S60CAKSA1

IDH04S60CAKSA1

DIODE SIL CARB 600V 4A TO220-2-2

Infineon Technologies

6,593 -
IDH04S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 4A 1.9 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 130pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH05S60CAKSA1

IDH05S60CAKSA1

DIODE SIL CARB 600V 5A TO220-2-2

Infineon Technologies

2,175 -
IDH05S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH08S60CAKSA1

IDH08S60CAKSA1

DIODE SIL CARB 600V 8A TO220-2-2

Infineon Technologies

5,098 -
IDH08S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 310pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
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