单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
DSS2-60AT2

DSS2-60AT2

DIODE SCHOTTKY 60V 2A TO92-3

IXYS

7,084 -

-

- TO-226-3, TO-92-3 (TO-226AA) Bulk Active Schottky 60 V 2A - Fast Recovery =< 500ns, > 200mA (Io) - - - - - Through Hole TO-92-3 -40°C ~ 175°C
STTH3006D

STTH3006D

DIODE GEN PURP 600V 30A TO220AC

STMicroelectronics

4,125 -
STTH3006D

数据表

- TO-220-2 Tube Obsolete Standard 600 V 30A 1.85 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 25 µA @ 600 V - - - Through Hole TO-220AC 175°C (Max)
STTH2002G

STTH2002G

DIODE GEN PURP 200V 20A D2PAK

STMicroelectronics

5,376 -
STTH2002G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 200 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 200 V - - - Surface Mount D2PAK 175°C (Max)
STTH2R02Q

STTH2R02Q

DIODE GEN PURP 200V 2A DO15

STMicroelectronics

4,504 -
STTH2R02Q

数据表

- DO-204AC, DO-15, Axial Tape & Box (TB) Obsolete Standard 200 V 2A 1 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 3 µA @ 200 V - - - Through Hole DO-15 175°C (Max)
STTH4R02B

STTH4R02B

DIODE GEN PURP 200V 4A DPAK

STMicroelectronics

4,395 -
STTH4R02B

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete Standard 200 V 4A 1.05 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 3 µA @ 200 V - - - Surface Mount DPAK 175°C (Max)
STTH802B

STTH802B

DIODE GEN PURP 200V 8A DPAK

STMicroelectronics

6,462 -
STTH802B

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete Standard 200 V 8A 1.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 6 µA @ 200 V - - - Surface Mount DPAK 175°C (Max)
STTH806G

STTH806G

DIODE GEN PURP 600V 8A D2PAK

STMicroelectronics

9,125 -
STTH806G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 8A 1.85 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 8 µA @ 600 V - - - Surface Mount D2PAK 175°C (Max)
STTH8R06G

STTH8R06G

DIODE GEN PURP 600V 8A D2PAK

STMicroelectronics

8,239 -
STTH8R06G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 8A 2.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - - - Surface Mount D2PAK 175°C (Max)
CDBER0140R

CDBER0140R

DIODE SCHOTTKY 40V 100MA 0503

Comchip Technology

3,822 -
CDBER0140R

数据表

- 0503 (1308 Metric) Tape & Reel (TR) Obsolete Schottky 40 V 100mA 450 mV @ 10 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 10 V 6pF @ 10V, 1MHz - - Surface Mount 0503/SOD-723F 125°C (Max)
PMEG2010AEK,115

PMEG2010AEK,115

DIODE SCHOTT 20V 1A SMT3 MPAK

NXP USA Inc.

8,392 -
PMEG2010AEK,115

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 20 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 20 V 70pF @ 5V, 1MHz - - Surface Mount SMT3; MPAK 150°C (Max)
UHB10FT-E3/8W

UHB10FT-E3/8W

DIODE GEN PURP 300V 10A TO263AB

Vishay General Semiconductor - Diodes Division

4,494 -
UHB10FT-E3/8W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 300 V 10A 1.2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 300 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
CSD08060A

CSD08060A

DIODE SIL CARB 600V 12.5A TO220

Wolfspeed, Inc.

3,294 -

-

Zero Recovery™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 12.5A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 470pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
FFP04S60STU

FFP04S60STU

DIODE GEN PURP 600V 4A TO220-2L

onsemi

8,989 -
FFP04S60STU

数据表

Stealth™ TO-220-2 Tube Obsolete Standard 600 V 4A 2.6 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 100 µA @ 600 V - - - Through Hole TO-220-2L -65°C ~ 150°C
FFP15S60STU

FFP15S60STU

DIODE GEN PURP 600V 15A TO220-2L

onsemi

9,063 -
FFP15S60STU

数据表

Stealth™ TO-220-2 Tube Obsolete Standard 600 V 15A 2.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 100 µA @ 600 V - - - Through Hole TO-220-2L -
FFPF04S60STU

FFPF04S60STU

DIODE GEN PURP 600V 4A TO220F-2L

onsemi

8,349 -
FFPF04S60STU

数据表

Stealth™ TO-220-2 Full Pack Tube Obsolete Avalanche 600 V 4A 2.6 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 100 µA @ 600 V - - - Through Hole TO-220F-2L -65°C ~ 150°C
FFH15S60STU

FFH15S60STU

DIODE GEN PURP 600V 15A TO247-2

onsemi

4,558 -
FFH15S60STU

数据表

- TO-247-2 Tube Obsolete Standard 600 V 15A 2.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 100 µA @ 600 V - - - Through Hole TO-247-2 -65°C ~ 150°C
FFH30S60STU

FFH30S60STU

DIODE GEN PURP 600V 30A TO247-2

onsemi

3,743 -
FFH30S60STU

数据表

- TO-247-2 Tube Obsolete Standard 600 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 100 µA @ 600 V - - - Through Hole TO-247-2 -65°C ~ 150°C
FFPF15S60STU

FFPF15S60STU

DIODE GEN PURP 600V 15A TO220F

onsemi

3,041 -
FFPF15S60STU

数据表

Stealth™ TO-220-2 Full Pack Tube Obsolete Avalanche 600 V 15A 2.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 100 µA @ 600 V - - - Through Hole TO-220F-2L -65°C ~ 150°C
VS-10ETS12SPBF

VS-10ETS12SPBF

DIODE GEN PURP 1.2KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

9,978 -
VS-10ETS12SPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key Standard 1200 V 10A 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-302UR60A

VS-302UR60A

DIODE GP REV 600V 300A DO205AB

Vishay General Semiconductor - Diodes Division

6,765 -

-

- DO-205AB, DO-9, Stud Bulk Obsolete Standard, Reverse Polarity 600 V 300A 1.4 V @ 942 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 600 V - - - Stud Mount DO-205AB (DO-9) -
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