单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
NS8GT-E3/45

NS8GT-E3/45

DIODE GEN PURP 400V 8A TO220AC

Vishay General Semiconductor - Diodes Division

920 -
NS8GT-E3/45

数据表

- TO-220-2 Tube Active Standard 400 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - - - Through Hole TO-220AC -55°C ~ 150°C
V20PWM60-M3/I

V20PWM60-M3/I

DIODE SCHOTTKY 60V 20A SLIMDPAK

Vishay General Semiconductor - Diodes Division

762 -
V20PWM60-M3/I

数据表

eSMP®, TMBS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 60 V 20A 700 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 1.2 mA @ 60 V 2320pF @ 4V, 1MHz - - Surface Mount SlimDPAK -40°C ~ 175°C
BYT56M-TAP

BYT56M-TAP

DIODE AVALANCHE 1KV 3A SOD64

Vishay General Semiconductor - Diodes Division

378 -
BYT56M-TAP

数据表

- SOD-64, Axial Cut Tape (CT) Active Avalanche 1000 V 3A 1.4 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 5 µA @ 1000 V - - - Through Hole SOD-64 -55°C ~ 175°C
MURSD820A-TP

MURSD820A-TP

DIODE GEN PURP 200V 8A DPAK

Micro Commercial Co

4,832 -
MURSD820A-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 200 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 65pF @ 4V, 1MHz - - Surface Mount DPAK -55°C ~ 150°C
SDURB1030

SDURB1030

DIODE GEN PURP 300V D2PAK

SMC Diode Solutions

4,270 -
SDURB1030

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V - 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 30 µA @ 300 V - - - Surface Mount D2PAK -55°C ~ 150°C
VS-8ETU04S-M3

VS-8ETU04S-M3

DIODE GEN PURP 400V 8A TO263AB

Vishay General Semiconductor - Diodes Division

941 -
VS-8ETU04S-M3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 400 V - - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
V20PW15-M3/I

V20PW15-M3/I

DIODE SCHOTTKY 150V 20A SLIMDPAK

Vishay General Semiconductor - Diodes Division

623 -
V20PW15-M3/I

数据表

eSMP®, TMBS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 150 V 20A 1.47 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 150 V 950pF @ 4V, 1MHz - - Surface Mount SlimDPAK -40°C ~ 150°C
FRAF10JGH

FRAF10JGH

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
FRAF10JGH

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 10A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 10 µA @ 600 V 59pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
FRAF8JGH

FRAF8JGH

DIODE GEN PURP 600V 8A ITO220AC

Taiwan Semiconductor Corporation

994 -
FRAF8JGH

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 54pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
FRAF10JG

FRAF10JG

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation

985 -
FRAF10JG

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 10A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 10 µA @ 600 V 59pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
FRAF8JG

FRAF8JG

DIODE GEN PURP 600V 8A ITO220AC

Taiwan Semiconductor Corporation

930 -
FRAF8JG

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 54pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
V20120S-E3/4W

V20120S-E3/4W

DIODE SCHOTTKY 120V 20A TO220-3

Vishay General Semiconductor - Diodes Division

7,831 -
V20120S-E3/4W

数据表

TMBS® TO-220-3 Tube Active Schottky 120 V 20A 1.12 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 120 V - - - Through Hole TO-220-3 -40°C ~ 150°C
SGL41-40-E3/97

SGL41-40-E3/97

DIODE SCHOTTKY 40V 1A GL41

Vishay General Semiconductor - Diodes Division

5,575 -
SGL41-40-E3/97

数据表

- DO-213AB, MELF Tape & Reel (TR) Active Schottky 40 V 1A 500 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V 110pF @ 4V, 1MHz - - Surface Mount DO-213AB (GL41) -55°C ~ 125°C
QH05TZ600

QH05TZ600

DIODE GEN PURP 600V 5A TO220AC

Power Integrations

4,900 -

-

Qspeed™ TO-220-2 Tube Active Standard 600 V 5A 3.1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 10 ns 250 µA @ 600 V 17pF @ 10V, 1MHz - - Through Hole TO-220AC 150°C (Max)
AR3PD-M3/86A

AR3PD-M3/86A

DIODE AVALANCHE 200V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

3,041 -
AR3PD-M3/86A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 200 V 1.8A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 200 V 44pF @ 4V, 1MHz - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
QH05BZ600

QH05BZ600

DIODE GEN PURP 600V 5A TO263AB

Power Integrations

2,700 -
QH05BZ600

数据表

Qspeed™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 5A 3.1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 10 ns 250 µA @ 600 V 17pF @ 10V, 1MHz - - Surface Mount TO-263AB 150°C (Max)
MSE1PJHM3J/89A

MSE1PJHM3J/89A

DIODE GEN PURP 600V 1A MICROSMP

Vishay General Semiconductor - Diodes Division

25,265 -
MSE1PJHM3J/89A

数据表

- DO-219AD Tape & Reel (TR) Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 780 ns 1 µA @ 600 V 5pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount DO-219AD (MicroSMP) -55°C ~ 175°C
PUUP8DH

PUUP8DH

DIODE GEN PURP 200V 8A TO277A

Taiwan Semiconductor Corporation

17,105 -
PUUP8DH

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 200 V 8A 1.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 200 V 96pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
PUUP8BH

PUUP8BH

DIODE GEN PURP 100V 8A TO277A

Taiwan Semiconductor Corporation

11,783 -
PUUP8BH

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 100 V 8A 1.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V 96pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
V12PM63HM3/H

V12PM63HM3/H

DIODE SCHOTTKY 60V 4.6A TO277A

Vishay General Semiconductor - Diodes Division

4,490 -
V12PM63HM3/H

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 4.6A 650 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 60 V 2400pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 175°C
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