单个双极晶体管

制造商 系列 封装/外壳 包装 产品状态 晶体管类型 电流 - 集电极 (Ic)(最大值) 电压 - 集电极发射极击穿(最大值) 集电极饱和电压 (Vce)(最大值)@ Ib, Ic 电流 - 集电极截止(最大值) 直流电流增益(hFE)(最小值)@ Ic, Vce 功率 - 最大值 频率 - 跃迁 工作温度 等级 认证 安装类型 供应商设备封装

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 晶体管类型 电流 - 集电极 (Ic)(最大值) 电压 - 集电极发射极击穿(最大值) 集电极饱和电压 (Vce)(最大值)@ Ib, Ic 电流 - 集电极截止(最大值) 直流电流增益(hFE)(最小值)@ Ic, Vce 功率 - 最大值 频率 - 跃迁 工作温度 等级 认证 安装类型 供应商设备封装
2SA965-Y,F(J

2SA965-Y,F(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

7,310 -
2SA965-Y,F(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y,SWFF(M

2SA965-Y,SWFF(M

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

6,496 -
2SA965-Y,SWFF(M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y,T6F(J

2SA965-Y,T6F(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

8,550 -
2SA965-Y,T6F(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA965-Y,T6KOJPF(J

2SA965-Y,T6KOJPF(J

TRANS PNP 120V 0.8A TO-92MOD

Toshiba Semiconductor and Storage

5,263 -
2SA965-Y,T6KOJPF(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1375,CLARIONF(M

2SB1375,CLARIONF(M

TRANS PNP 60V 3A TO-220NIS

Toshiba Semiconductor and Storage

6,664 -
2SB1375,CLARIONF(M

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 3 A 60 V 1.5V @ 200mA, 2A 10µA (ICBO) 100 @ 500mA, 5V 2 W 9MHz 150°C (TJ) - - Through Hole TO-220NIS
2SB1457(T6CANO,F,M

2SB1457(T6CANO,F,M

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

7,532 -
2SB1457(T6CANO,F,M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1457(T6CNO,A,F)

2SB1457(T6CNO,A,F)

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

7,670 -
2SB1457(T6CNO,A,F)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1457(T6DW,F,M)

2SB1457(T6DW,F,M)

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

5,753 -
2SB1457(T6DW,F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1457(TE6,F,M)

2SB1457(TE6,F,M)

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

3,754 -
2SB1457(TE6,F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1457,T6TOTOF(J

2SB1457,T6TOTOF(J

TRANS PNP 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

7,515 -
2SB1457,T6TOTOF(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) - - Through Hole TO-92MOD
2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

TRANS PNP 100V 4A TO-220NIS

Toshiba Semiconductor and Storage

8,311 -
2SB1481(TOJS,Q,M)

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 4 A 100 V 1.5V @ 6mA, 3A 2µA (ICBO) 2000 @ 3A, 2V 2 W - 150°C (TJ) - - Through Hole TO-220NIS
2SB1495,Q(J

2SB1495,Q(J

TRANS PNP 100V 3A TO-220NIS

Toshiba Semiconductor and Storage

9,012 -
2SB1495,Q(J

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 3 A 100 V 1.5V @ 1.5mA, 1.5A 10µA (ICBO) 2000 @ 2A, 2V 2 W - 150°C (TJ) - - Through Hole TO-220NIS
2SB1495,Q(M

2SB1495,Q(M

TRANS PNP 100V 3A TO-220NIS

Toshiba Semiconductor and Storage

2,128 -
2SB1495,Q(M

数据表

- TO-220-3 Full Pack Bulk Obsolete PNP 3 A 100 V 1.5V @ 1.5mA, 1.5A 10µA (ICBO) 2000 @ 2A, 2V 2 W - 150°C (TJ) - - Through Hole TO-220NIS
2SC1627A-O,PASF(M

2SC1627A-O,PASF(M

TRANS NPN 80V 0.4A TO-92MOD

Toshiba Semiconductor and Storage

5,605 -
2SC1627A-O,PASF(M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 400 mA 80 V 400mV @ 20mA, 200A 100nA (ICBO) 70 @ 50mA, 2V 800 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC1627A-Y,PASF(M

2SC1627A-Y,PASF(M

TRANS NPN 80V 0.4A TO-92MOD

Toshiba Semiconductor and Storage

3,639 -
2SC1627A-Y,PASF(M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 400 mA 80 V 400mV @ 20mA, 200A 100nA (ICBO) 70 @ 50mA, 2V 800 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC2229(TE6SAN1F,M

2SC2229(TE6SAN1F,M

TRANS NPN 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

7,383 -
2SC2229(TE6SAN1F,M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC2229-O(MIT1F,M)

2SC2229-O(MIT1F,M)

TRANS NPN 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

7,998 -
2SC2229-O(MIT1F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC2229-O(MITIF,M)

2SC2229-O(MITIF,M)

TRANS NPN 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

7,840 -
2SC2229-O(MITIF,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC2229-O(SHP,F,M)

2SC2229-O(SHP,F,M)

TRANS NPN 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

5,208 -
2SC2229-O(SHP,F,M)

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC2229-O(SHP1,F,M

2SC2229-O(SHP1,F,M

TRANS NPN 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

8,519 -
2SC2229-O(SHP1,F,M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
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