桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
KBU4J-E4/51

KBU4J-E4/51

BRIDGE RECT 1PHASE 600V 4A KBU

Vishay General Semiconductor - Diodes Division

8,025 -
KBU4J-E4/51

数据表

- 4-SIP, KBU Bulk Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -50°C ~ 150°C (TJ) - - Through Hole KBU
GBJ601-F

GBJ601-F

BRIDGE RECT 1PHASE 100V 6A GBJ

Diodes Incorporated

15 -
GBJ601-F

数据表

- 4-SIP, GBJ Tube Active Single Phase Standard 100 V 6 A 1 V @ 3 A 5 µA @ 100 V -65°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ602-F

GBJ602-F

BRIDGE RECT 1PHASE 200V 6A GBJ

Diodes Incorporated

2,097 -
GBJ602-F

数据表

- 4-SIP, GBJ Tube Active Single Phase Standard 200 V 6 A 1 V @ 3 A 5 µA @ 200 V -65°C ~ 150°C (TJ) - - Through Hole GBJ
GBPC3510W

GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

SMC Diode Solutions

8,413 -
GBPC3510W

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBU4B-E3/51

GBU4B-E3/51

BRIDGE RECT 1PHASE 100V 3A GBU

Vishay General Semiconductor - Diodes Division

9,771 -
GBU4B-E3/51

数据表

- 4-SIP, GBU Tray Active Single Phase Standard 100 V 3 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBU
BU1506-E3/51

BU1506-E3/51

BRIDGE RECT 1PHASE 600V 3.4A BU

Vishay General Semiconductor - Diodes Division

1 -
BU1506-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.4 A 1.05 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
GBJ2002-F

GBJ2002-F

BRIDGE RECT 1PHASE 200V 20A GBJ

Diodes Incorporated

11 -
GBJ2002-F

数据表

- 4-SIP, GBJ Tube Active Single Phase Standard 200 V 20 A 1.05 V @ 10 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2004-F

GBJ2004-F

BRIDGE RECT 1PHASE 400V 20A GBJ

Diodes Incorporated

8 -
GBJ2004-F

数据表

- 4-SIP, GBJ Tube Active Single Phase Standard 400 V 20 A 1.05 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ1501-F

GBJ1501-F

BRIDGE RECT 1PHASE 100V 15A GBJ

Diodes Incorporated

7 -
GBJ1501-F

数据表

- 4-SIP, GBJ Tube Active Single Phase Standard 100 V 15 A 1.05 V @ 7.5 A 10 µA @ 100 V -65°C ~ 150°C (TJ) - - Through Hole GBJ
GBPC1201W-E4/51

GBPC1201W-E4/51

BRIDGE RECT 1P 100V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

5,617 -
GBPC1201W-E4/51

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 100 V 12 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC1202W-E4/51

GBPC1202W-E4/51

BRIDGE RECT 1P 200V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

4,773 -
GBPC1202W-E4/51

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 200 V 12 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC1502W-E4/51

GBPC1502W-E4/51

BRIDGE RECT 1P 200V 15A GBPC-W

Vishay General Semiconductor - Diodes Division

5,014 -
GBPC1502W-E4/51

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 200 V 15 A 1.1 V @ 7.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC1510W-E4/51

GBPC1510W-E4/51

BRIDGE RECT 1P 1KV 15A GBPC-W

Vishay General Semiconductor - Diodes Division

8,751 -
GBPC1510W-E4/51

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC2508-E4/51

GBPC2508-E4/51

BRIDGE RECT 1PHASE 800V 25A GBPC

Vishay General Semiconductor - Diodes Division

2,713 -
GBPC2508-E4/51

数据表

- 4-Square, GBPC Box Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
GBU6D-E3/45

GBU6D-E3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

9,312 -
GBU6D-E3/45

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 200 V 3.8 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
VS-KBPC6005PBF

VS-KBPC6005PBF

BRIDGE RECT 1PHASE 50V 6A D-72

Vishay General Semiconductor - Diodes Division

12 -
VS-KBPC6005PBF

数据表

VS-KBPC6 4-Square, D-72 Bulk Active Single Phase Standard 50 V 6 A 1.2 V @ 3 A 10 µA @ 50 V -40°C ~ 150°C (TJ) - - Through Hole D-72
GBPC2508T

GBPC2508T

BRIDGE RECT 1PHASE 800V 25A GBPC

GeneSiC Semiconductor

6 -
GBPC2508T

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
GBPC2506W

GBPC2506W

BRIDGE RECT 1P 600V 25A GBPC-W

GeneSiC Semiconductor

4,422 -
GBPC2506W

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC15005W

GBPC15005W

BRIDGE RECT 1P 50V 15A GBPC-W

onsemi

8,176 -
GBPC15005W

数据表

- 4-Square, GBPC-W Bulk Not For New Designs Single Phase Standard 50 V 15 A 1.1 V @ 7.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC2501W-E4/51

GBPC2501W-E4/51

BRIDGE RECT 1P 100V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

9,614 -
GBPC2501W-E4/51

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 100 V 25 A 1.1 V @ 12.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
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