桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBJ2504

GBJ2504

BRIDGE RECT 1PHASE 400V 25A GBJ

SMC Diode Solutions

7,887 -
GBJ2504

数据表

- 4-ESIP Tube Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2508

GBJ2508

BRIDGE RECT 1PHASE 800V 25A GBJ

SMC Diode Solutions

8,920 -
GBJ2508

数据表

- 4-ESIP Tube Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
DB102S-G

DB102S-G

BRIDGE RECT 1PHASE 100V 1A DBS

Comchip Technology

2,937 -
DB102S-G

数据表

- 4-SMD, Gull Wing Tape & Reel (TR) Obsolete Single Phase Standard 100 V 1 A 1.1 V @ 1 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Surface Mount DBS
BR605

BR605

BRIDGE RECT 1PHASE 50V 6A BR-6

GeneSiC Semiconductor

9,928 -
BR605

数据表

- 4-Square, BR-6 Bulk Active Single Phase Standard 50 V 6 A 1 V @ 3 A 10 µA @ 50 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
BR61

BR61

BRIDGE RECT 1PHASE 100V 6A BR-6

GeneSiC Semiconductor

6,827 -
BR61

数据表

- 4-Square, BR-6 Bulk Active Single Phase Standard 100 V 6 A 1 V @ 3 A 10 µA @ 100 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
BR610

BR610

BRIDGE RECT 1PHASE 1KV 6A BR-6

GeneSiC Semiconductor

2,352 -
BR610

数据表

- 4-Square, BR-6 Bulk Active Single Phase Standard 1 kV 6 A 1 V @ 3 A 10 µA @ 1000 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
BR64

BR64

BRIDGE RECT 1PHASE 400V 6A BR-6

GeneSiC Semiconductor

5,278 -
BR64

数据表

- 4-Square, BR-6 Bulk Active Single Phase Standard 400 V 6 A 1 V @ 3 A 10 µA @ 400 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
BR66

BR66

BRIDGE RECT 1PHASE 600V 6A BR-6

GeneSiC Semiconductor

9,337 -
BR66

数据表

- 4-Square, BR-6 Bulk Active Single Phase Standard 600 V 6 A 1 V @ 3 A 10 µA @ 600 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
BR68

BR68

BRIDGE RECT 1PHASE 800V 6A BR-6

GeneSiC Semiconductor

4,852 -
BR68

数据表

- 4-Square, BR-6 Bulk Active Single Phase Standard 800 V 6 A 1 V @ 3 A 10 µA @ 800 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
KBU8D

KBU8D

BRIDGE RECT 1PHASE 200V 8A KBU

GeneSiC Semiconductor

2,247 -
KBU8D

数据表

- 4-SIP, KBU Bulk Active Single Phase Standard 200 V 8 A 1 V @ 8 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole KBU
TT8M

TT8M

BRIDGE RECT 1PHASE 1KV 8A TT

Diodes Incorporated

2,681 -
TT8M

数据表

- 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Surface Mount TT
G3SBA20-M3/51

G3SBA20-M3/51

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division

4,662 -
G3SBA20-M3/51

数据表

- 4-SIP, GBU Tray Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
G3SBA80-M3/51

G3SBA80-M3/51

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division

5,269 -
G3SBA80-M3/51

数据表

- 4-SIP, GBU Tray Active Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBJ10K

GBJ10K

BRIDGE RECT 1PHASE 800V 10A GBJ

GeneSiC Semiconductor

2,362 -
GBJ10K

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ10D

GBJ10D

BRIDGE RECT 1PHASE 200V 10A GBJ

GeneSiC Semiconductor

2,000 -
GBJ10D

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 200 V 10 A 1.05 V @ 5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ10J

GBJ10J

BRIDGE RECT 1PHASE 600V 10A GBJ

GeneSiC Semiconductor

8,916 -
GBJ10J

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ10B

GBJ10B

BRIDGE RECT 1PHASE 100V 10A GBJ

GeneSiC Semiconductor

4,579 -
GBJ10B

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 100 V 10 A 1.05 V @ 5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ10G

GBJ10G

BRIDGE RECT 1PHASE 400V 10A GBJ

GeneSiC Semiconductor

2,147 -
GBJ10G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 400 V 10 A 1.05 V @ 5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ10M

GBJ10M

BRIDGE RECT 1PHASE 1KV 10A GBJ

GeneSiC Semiconductor

3,000 -
GBJ10M

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBL005-E3/45

GBL005-E3/45

BRIDGE RECT 1PHASE 50V 3A GBL

Vishay General Semiconductor - Diodes Division

6,560 -
GBL005-E3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 50 V 3 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBL
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