桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
G2SB60-E3/51

G2SB60-E3/51

BRIDGE RECT 1PHASE 600V 1.5A GBL

Vishay General Semiconductor - Diodes Division

8,294 -
G2SB60-E3/51

数据表

- 4-SIP, GBL Bulk Obsolete Single Phase Standard 600 V 1.5 A 1 V @ 750 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBL
G2SB80-E3/51

G2SB80-E3/51

BRIDGE RECT 1PHASE 800V 1.5A GBL

Vishay General Semiconductor - Diodes Division

4,259 -
G2SB80-E3/51

数据表

- 4-SIP, GBL Bulk Obsolete Single Phase Standard 800 V 1.5 A 1 V @ 750 mA 50 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
G2SBA20-E3/51

G2SBA20-E3/51

BRIDGE RECT 1PHASE 200V 1.5A GBL

Vishay General Semiconductor - Diodes Division

2,415 -
G2SBA20-E3/51

数据表

- 4-SIP, GBL Bulk Obsolete Single Phase Standard 200 V 1.5 A 1 V @ 750 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBL
G2SBA60-E3/51

G2SBA60-E3/51

BRIDGE RECT 1PHASE 600V 1.5A GBL

Vishay General Semiconductor - Diodes Division

5,300 -
G2SBA60-E3/51

数据表

- 4-SIP, GBL Bulk Obsolete Single Phase Standard 600 V 1.5 A 1 V @ 750 mA 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
G2SBA80-E3/51

G2SBA80-E3/51

BRIDGE RECT 1PHASE 800V 1.5A GBL

Vishay General Semiconductor - Diodes Division

9,253 -
G2SBA80-E3/51

数据表

- 4-SIP, GBL Bulk Obsolete Single Phase Standard 800 V 1.5 A 1 V @ 750 mA 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBL
G3SBA20L-E3/51

G3SBA20L-E3/51

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division

4,366 -
G3SBA20L-E3/51

数据表

- 4-SIP, GBU Bulk Obsolete Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBPC1005-E4/51

GBPC1005-E4/51

BRIDGE RECT 1PHASE 50V 2A GBPC1

Vishay General Semiconductor - Diodes Division

8,070 -
GBPC1005-E4/51

数据表

- 4-Square, GBPC-1 Bulk Obsolete Single Phase Standard 50 V 2 A 1 V @ 1.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBPC1
GBPC101-E4/51

GBPC101-E4/51

BRIDGE RECT 1PHASE 100V 2A GBPC1

Vishay General Semiconductor - Diodes Division

9,251 -
GBPC101-E4/51

数据表

- 4-Square, GBPC-1 Bulk Obsolete Single Phase Standard 100 V 2 A 1 V @ 1.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBPC1
GBPC106-E4/51

GBPC106-E4/51

BRIDGE RECT 1PHASE 600V 2A GBPC1

Vishay General Semiconductor - Diodes Division

4,049 -
GBPC106-E4/51

数据表

- 4-Square, GBPC-1 Box Obsolete Single Phase Standard 600 V 2 A 1 V @ 1.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC1
GBPC108-E4/51

GBPC108-E4/51

BRIDGE RECT 1PHASE 800V 2A GBPC1

Vishay General Semiconductor - Diodes Division

6,493 -
GBPC108-E4/51

数据表

- 4-Square, GBPC-1 Bulk Obsolete Single Phase Standard 800 V 2 A 1 V @ 1.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBPC1
GBPC110-E4/51

GBPC110-E4/51

BRIDGE RECT 1PHASE 1KV 2A GBPC1

Vishay General Semiconductor - Diodes Division

2,317 -
GBPC110-E4/51

数据表

- 4-Square, GBPC-1 Bulk Obsolete Single Phase Standard 1 kV 2 A 1 V @ 1.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC1
GBPC2510W(UM)E4/51

GBPC2510W(UM)E4/51

BRIDGE RECT 1P 1KV 25A GBPC-W

Vishay General Semiconductor - Diodes Division

6,108 -
GBPC2510W(UM)E4/51

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC2510(UM)E4/51

GBPC2510(UM)E4/51

BRIDGE RECT 1PHASE 1KV 25A GBPC

Vishay General Semiconductor - Diodes Division

5,588 -
GBPC2510(UM)E4/51

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
DFL1514S-E3/77

DFL1514S-E3/77

BRIDGE RECT 1P 1.4KV 1.5A DFS

Vishay General Semiconductor - Diodes Division

7,615 -
DFL1514S-E3/77

数据表

- 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 1.4 kV 1.5 A 1.1 V @ 1.5 A 5 µA @ 1400 V -55°C ~ 150°C (TJ) - - Surface Mount DFS
3N246-E4/51

3N246-E4/51

BRIDGE RECT 1PHASE 50V 1.5A KBPM

Vishay General Semiconductor - Diodes Division

3,314 -
3N246-E4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 50 V 1.5 A 1 V @ 1 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole KBPM
3N247-E4/51

3N247-E4/51

BRIDGE RECT 1P 100V 1.5A KBPM

Vishay General Semiconductor - Diodes Division

7,727 -
3N247-E4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 100 V 1.5 A 1 V @ 1 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole KBPM
3N248-E4/51

3N248-E4/51

BRIDGE RECT 1P 200V 1.5A KBPM

Vishay General Semiconductor - Diodes Division

2,691 -
3N248-E4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 200 V 1.5 A 1 V @ 1 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole KBPM
3N249-E4/51

3N249-E4/51

BRIDGE RECT 1P 400V 1.5A KBPM

Vishay General Semiconductor - Diodes Division

4,273 -
3N249-E4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 400 V 1.5 A 1 V @ 1 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole KBPM
3N250-E4/51

3N250-E4/51

BRIDGE RECT 1P 600V 1.5A KBPM

Vishay General Semiconductor - Diodes Division

3,295 -
3N250-E4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 600 V 1.5 A 1 V @ 1 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole KBPM
3N251-E4/51

3N251-E4/51

BRIDGE RECT 1P 800V 1.5A KBPM

Vishay General Semiconductor - Diodes Division

9,655 -
3N251-E4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 800 V 1.5 A 1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole KBPM
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