桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBU8D-E3/45

GBU8D-E3/45

BRIDGE RECT 1PHASE 200V 3.9A GBU

Vishay General Semiconductor - Diodes Division

275 -
GBU8D-E3/45

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 200 V 3.9 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-E3/45

GBU8K-E3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

1,025 -
GBU8K-E3/45

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-E3/51

GBU8K-E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

470 -
GBU8K-E3/51

数据表

- 4-SIP, GBU Bulk Active Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
TS25P07G

TS25P07G

BRIDGE RECT 1PHASE 1KV 25A TS-6P

Taiwan Semiconductor Corporation

1,130 -
TS25P07G

数据表

- 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 25 A 1.1 V @ 1.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
KBU1004-G

KBU1004-G

BRIDGE RECT 1PHASE 400V 10A KBU

Comchip Technology

686 -
KBU1004-G

数据表

- 4-SIP, KBU Tray Active Single Phase Standard 400 V 10 A 1 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole KBU
GBU6B-E3/45

GBU6B-E3/45

BRIDGE RECT 1PHASE 100V 3.8A GBU

Vishay General Semiconductor - Diodes Division

591 -
GBU6B-E3/45

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 100 V 3.8 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU6D

GBU6D

BRIDGE RECT 1PHASE 200V 6A GBU

onsemi

1,312 -
GBU6D

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 200 V 6 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBJ2001-F

GBJ2001-F

BRIDGE RECT 1PHASE 100V 20A GBJ

Diodes Incorporated

1,028 -
GBJ2001-F

数据表

- 4-SIP, GBJ Tube Active Single Phase Standard 100 V 20 A 1.05 V @ 10 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
VS-2KBP01

VS-2KBP01

BRIDGE RECT 1PHASE 100V 2A D-44

Vishay General Semiconductor - Diodes Division

784 -
VS-2KBP01

数据表

VS-2KBP 4-SIP, D-44 Bulk Active Single Phase Standard 100 V 2 A 1 V @ 1 A 10 µA @ 100 V -40°C ~ 150°C (TJ) - - Through Hole D-44
VS-2KBB10

VS-2KBB10

BRIDGE RECT 1P 100V 1.9A 2KBB

Vishay General Semiconductor - Diodes Division

487 -
VS-2KBB10

数据表

- 4-SIP, 2KBB Bulk Active Single Phase Standard 100 V 1.9 A 1.1 V @ 1.9 A 10 µA @ 100 V -40°C ~ 150°C (TJ) - - Through Hole 2KBB
BR1001SG-G

BR1001SG-G

BRIDGE RECT 1PHASE 100V 10A BR-8

Comchip Technology

1,970 -
BR1001SG-G

数据表

- 4-Square, BR-8 Bulk Active Single Phase Standard 100 V 10 A 1.1 V @ 5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Chassis Mount BR-8
TS40P07G

TS40P07G

BRIDGE RECT 1PHASE 1KV 40A TS-6P

Taiwan Semiconductor Corporation

1,603 -
TS40P07G

数据表

- 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
GBJ1006-F

GBJ1006-F

BRIDGE RECT 1PHASE 600V 10A GBJ

Diodes Incorporated

242 -
GBJ1006-F

数据表

- 4-SIP, GBJ Tube Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 10 µA @ 600 V -65°C ~ 150°C (TJ) - - Through Hole GBJ
GBU25H08-M3/P

GBU25H08-M3/P

BRIDGE RECT 1PHASE 800V 4.5A GBU

Vishay General Semiconductor - Diodes Division

334 -
GBU25H08-M3/P

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 800 V 4.5 A 1.05 V @ 12.5 A 10 µA @ 800 V -55°C ~ 175°C (TJ) - - Through Hole GBU
VS-2KBB40

VS-2KBB40

BRIDGE RECT 1P 400V 1.9A 2KBB

Vishay General Semiconductor - Diodes Division

502 -
VS-2KBB40

数据表

- 4-SIP, 2KBB Bulk Active Single Phase Standard 400 V 1.9 A 1.1 V @ 1.9 A - -40°C ~ 150°C (TJ) - - Through Hole 2KBB
DFB2040

DFB2040

BRIDGE RECT 1P 400V 20A TS-6P

onsemi

1,187 -
DFB2040

数据表

- 4-SIP, TS-6P Tube Active Single Phase Standard 400 V 20 A 1.1 V @ 20 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
GBJ2508-BP

GBJ2508-BP

BRIDGE RECT 1PHASE 800V 25A GBJ

Micro Commercial Co

803 -
GBJ2508-BP

数据表

- 4-SIP, GBJ Tube Active Single Phase Standard 800 V 25 A 1.05 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GSIB680-E3/45

GSIB680-E3/45

BRIDGE RECT 1P 800V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division

1,461 -
GSIB680-E3/45

数据表

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 800 V 2.8 A 950 mV @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
VS-KBPC1005

VS-KBPC1005

BRIDGE RECT 1PHASE 50V 3A KBPC1

Vishay General Semiconductor - Diodes Division

223 -
VS-KBPC1005

数据表

VS-KBPC1 4-Square, KBPC-1 Bulk Active Single Phase Standard 50 V 3 A 1.1 V @ 1.5 A 10 µA @ 50 V -40°C ~ 150°C (TJ) - - Through Hole KBPC1
GBU4D-E3/45

GBU4D-E3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

1,492 -
GBU4D-E3/45

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
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