桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
BU1210-E3/45

BU1210-E3/45

BRIDGE RECT 1PHASE 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division

248 -
BU1210-E3/45

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
GBU2505 D2

GBU2505 D2

BRIDGE RECT 1PHASE 600V 25A GBU

Taiwan Semiconductor Corporation

814 -
GBU2505 D2

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 600 V 25 A 1.2 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
BU1508-E3/45

BU1508-E3/45

BRIDGE RECT 1PHASE 800V 3.4A BU

Vishay General Semiconductor - Diodes Division

860 -
BU1508-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 800 V 3.4 A 1.05 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU2506-E3/51

BU2506-E3/51

BRIDGE RECT 1PHASE 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

1,492 -
BU2506-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU2506-E3/45

BU2506-E3/45

BRIDGE RECT 1PHASE 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

780 -
BU2506-E3/45

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU2506-M3/45

BU2506-M3/45

BRIDGE RECT 1PHASE 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

753 -
BU2506-M3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
DFB20100

DFB20100

BRIDGE RECT 1PHASE 1KV 20A TS-6P

onsemi

1,213 -
DFB20100

数据表

- 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
BU2010-E3/51

BU2010-E3/51

BRIDGE RECT 1PHASE 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division

1,658 -
BU2010-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU2010-E3/45

BU2010-E3/45

BRIDGE RECT 1PHASE 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division

706 -
BU2010-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU2010-M3/45

BU2010-M3/45

BRIDGE RECT 1PHASE 1KV 20A BU

Vishay General Semiconductor - Diodes Division

439 -
BU2010-M3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU2508-E3/45

BU2508-E3/45

BRIDGE RECT 1PHASE 800V 3.5A BU

Vishay General Semiconductor - Diodes Division

272 -
BU2508-E3/45

数据表

- 4-SIP, BU Tray Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
PB3008-E3/45

PB3008-E3/45

BRIDGE RECT 1PHASE 800V 30A PB

Vishay General Semiconductor - Diodes Division

995 -
PB3008-E3/45

数据表

- 4-SIP, PB Tube Active Single Phase Standard 800 V 30 A 1.1 V @ 15 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ PB
GBPC2510W

GBPC2510W

BRIDGE RECT 1P 1KV 25A GBPC-W

GeneSiC Semiconductor

650 -
GBPC2510W

数据表

- 4-Square, GBPC-W Bulk Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC2506T

GBPC2506T

BRIDGE RECT 1PHASE 600V 25A GBPC

GeneSiC Semiconductor

305 -
GBPC2506T

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
DFB2580

DFB2580

BRIDGE RECT 1P 800V 25A TS-6P

onsemi

284 -
DFB2580

数据表

- 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 25 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
KBU6J-E4/51

KBU6J-E4/51

BRIDGE RECT 1PHASE 600V 6A KBU

Vishay General Semiconductor - Diodes Division

429 -
KBU6J-E4/51

数据表

- 4-SIP, KBU Bulk Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -50°C ~ 150°C (TJ) - - Through Hole KBU
KBU6M-E4/51

KBU6M-E4/51

BRIDGE RECT 1PHASE 1KV 6A KBU

Vishay General Semiconductor - Diodes Division

292 -
KBU6M-E4/51

数据表

- 4-SIP, KBU Bulk Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) - - Through Hole KBU
KBU6B-E4/51

KBU6B-E4/51

BRIDGE RECT 1PHASE 100V 6A KBU

Vishay General Semiconductor - Diodes Division

173 -
KBU6B-E4/51

数据表

- 4-SIP, KBU Bulk Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -50°C ~ 150°C (TJ) - - Through Hole KBU
GBPC3508-G

GBPC3508-G

BRIDGE RECT 1PHASE 800V 35A GBPC

Comchip Technology

490 -
GBPC3508-G

数据表

- 4-Square, GBPC Tray Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
GBPC12005-E4/51

GBPC12005-E4/51

BRIDGE RECT 1P 50V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

186 -
GBPC12005-E4/51

数据表

- 4-Square, GBPC-W Box Active Single Phase Standard 50 V 12 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
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