桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBU810

GBU810

BRIDGE RECT 1PHASE 1KV 8A GBU

MDD

5,000 -
GBU810

数据表

GBU 4-SIP, GBU Box Active Single Phase Standard 1 kV 8 A 1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU810 L

GBU810 L

BRIDGE RECT 1PHASE 1KV 8A GBU

MDD

5,000 -
GBU810 L

数据表

GBU 4-SIP, GBU Box Active Single Phase Standard 1 kV 8 A 1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU806

GBU806

BRIDGE RECT 1P 600V 333MA GBU

MDD

4,000 -
GBU806

数据表

GBU 4-SIP, GBU Box Active Single Phase Standard 600 V 333 mA 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBJ2506

GBJ2506

BRIDGE DIODE 25A 600V GBJ

Lumimax Optoelectronic Technology

1,300 -

-

- - Bulk Active - - - - - - - - - - -
8202011

8202011

HARDWARE,TERMINAL HOUSING,G2K2 F

Infineon Technologies

1,000 -

-

- - Box Active - - - - - - - - - - -
BR810

BR810

BRIDGE RECT 1PHASE 1KV 8A BR-10

EIC SEMICONDUCTOR INC.

400 -
BR810

数据表

- 4-Square, BR-10 Bag Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 10 µA @ 1000 V -40°C ~ 150°C (TJ) - - Through Hole BR-10
RBV1001

RBV1001

BRIDGE RECT 1P 100V 10A RBV-25

EIC SEMICONDUCTOR INC.

400 -
RBV1001

数据表

- 4-SIP, RBV-25 Bag Active Single Phase Standard 100 V 10 A 1 V @ 5 A 10 µA @ 100 V -40°C ~ 150°C (TJ) - - Through Hole RBV-25
GBJ3510

GBJ3510

BRIDGE RECT 1PHASE 1KV 35A GBJ

MDD

13,500 -
GBJ3510

数据表

GBJ 4-SIP, GBJ Box Active Single Phase Standard 1 kV 35 A 1.05 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBPC1208

GBPC1208

BRIDGE RECT 1PHASE 800V 12A GBPC

onsemi

496 -
GBPC1208

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 800 V 12 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
RBV804

RBV804

BRIDGE RECT 1P 400V 8A RBV-25

EIC SEMICONDUCTOR INC.

1,000 -
RBV804

数据表

- 4-SIP, RBV-25 Bag Active Single Phase Standard 400 V 8 A 1 V @ 4 A 10 µA @ 400 V -40°C ~ 150°C (TJ) - - Through Hole RBV-25
RBV1002

RBV1002

BRIDGE RECT 1P 200V 10A RBV-25

EIC SEMICONDUCTOR INC.

1,000 -
RBV1002

数据表

- 4-SIP, RBV-25 Bag Active Single Phase Standard 200 V 10 A 1 V @ 5 A 10 µA @ 200 V -40°C ~ 150°C (TJ) - - Through Hole RBV-25
DB207

DB207

BRIDGE RECT 1PHASE 1KV 2A DB

MDD

250,000 -
DB207

数据表

* 4-EDIP (0.321", 8.15mm) Tape & Reel (TR) Active Single Phase Standard 1 kV 2 A 1.1 V @ 1 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole DB
RBV810

RBV810

BRIDGE RECT 1PHASE 1KV 8A RBV-25

EIC SEMICONDUCTOR INC.

700 -
RBV810

数据表

- 4-SIP, RBV-25 Bag Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 10 µA @ 1000 V -40°C ~ 150°C (TJ) - - Through Hole RBV-25
RBV610

RBV610

BRIDGE RECT 1PHASE 1KV 6A RBV-25

EIC SEMICONDUCTOR INC.

1,000 -
RBV610

数据表

- 4-SIP, RBV-25 Bag Active Single Phase Standard 1 kV 6 A 1 V @ 3 A 10 µA @ 1000 V -40°C ~ 150°C (TJ) - - Through Hole RBV-25
BR801

BR801

BRIDGE RECT 1PHASE 100V 8A BR-10

EIC SEMICONDUCTOR INC.

1,600 -
BR801

数据表

- 4-Square, BR-10 Bag Active Single Phase Standard 100 V 8 A 1 V @ 4 A 10 µA @ 100 V -40°C ~ 150°C (TJ) - - Through Hole BR-10
KBPC610

KBPC610

BRIDGE RECT 1P 1KV 250MA KBPC

MDD

100,000 -
KBPC610

数据表

KBPC 4-Square, KBPC Box Active Single Phase Standard 1 kV 250 mA 1.1 V @ 3 A 10 µA @ 1000 V -50°C ~ 150°C (TJ) - - Through Hole KBPC
DFB2005

DFB2005

BRIDGE RECT 1PHASE 50V 20A TS-6P

Fairchild Semiconductor

3,000 -
DFB2005

数据表

- 4-SIP, TS-6P Bulk Active Single Phase Standard 50 V 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
DFB2020

DFB2020

BRIDGE RECT 1P 200V 20A TS-6P

Fairchild Semiconductor

2,400 -
DFB2020

数据表

- 4-SIP, TS-6P Bulk Active Single Phase Standard 200 V 20 A 1.1 V @ 20 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
DFB2080

DFB2080

BRIDGE RECT 1P 800V 20A TS-6P

Fairchild Semiconductor

2,128 -
DFB2080

数据表

- 4-SIP, TS-6P Bulk Active Single Phase Standard 800 V 20 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
DFB2010

DFB2010

BRIDGE RECT 1P 100V 20A TS-6P

Fairchild Semiconductor

1,200 -
DFB2010

数据表

- 4-SIP, TS-6P Bulk Active Single Phase Standard 100 V 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
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