桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBPC1508-E4/51

GBPC1508-E4/51

BRIDGE RECT 1PHASE 800V 15A GBPC

Vishay General Semiconductor - Diodes Division

91 -
GBPC1508-E4/51

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 800 V 15 A 1.1 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
DB35-16

DB35-16

BRIDGE RECT 3PHASE 1.6KV 35A DB

Diotec Semiconductor

51 -
DB35-16

数据表

- 5-Square, DB-35 Box Active Three Phase Standard 1.6 kV 35 A 1.05 V @ 17.5 A 10 µA @ 1600 V -50°C ~ 150°C (TJ) - - Chassis Mount DB
GBPC3506W-E4/51

GBPC3506W-E4/51

BRIDGE RECT 1P 600V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

62 -
GBPC3506W-E4/51

数据表

- 4-Square, GBPC-W Box Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC3508-E4/51

GBPC3508-E4/51

BRIDGE RECT 1PHASE 800V 35A GBPC

Vishay General Semiconductor - Diodes Division

56 -
GBPC3508-E4/51

数据表

- 4-Square, GBPC Box Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
GBPC2504

GBPC2504

BRIDGE RECT 1PHASE 400V 25A GBPC

onsemi

95 -
GBPC2504

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
VS-GBPC2506A

VS-GBPC2506A

BRIDGE RECT 1P 600V 25A GBPC-A

Vishay General Semiconductor - Diodes Division

76 -
VS-GBPC2506A

数据表

VS-GBPC 4-Square, GBPC-A Tray Active Single Phase Standard 600 V 25 A - 2 mA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
GBPC3504

GBPC3504

BRIDGE RECT 1PHASE 400V 35A GBPC

onsemi

56 -
GBPC3504

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 400 V 35 A - 5 µA @ 400 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
VS-36MB20A

VS-36MB20A

BRIDGE RECT 1PHASE 200V 35A D-34

Vishay General Semiconductor - Diodes Division

88 -
VS-36MB20A

数据表

- 4-Square, D-34 Bulk Active Single Phase Standard 200 V 35 A - 10 µA @ 200 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
VS-26MB20A

VS-26MB20A

BRIDGE RECT 1PHASE 200V 25A D-34

Vishay General Semiconductor - Diodes Division

45 -
VS-26MB20A

数据表

- 4-Square, D-34 Bulk Active Single Phase Standard 200 V 25 A - 10 µA @ 200 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
VS-36MB120A

VS-36MB120A

BRIDGE RECT 1P 1.2KV 35A D-34

Vishay General Semiconductor - Diodes Division

82 -
VS-36MB120A

数据表

- 4-Square, D-34 Bulk Active Single Phase Standard 1.2 kV 35 A - 10 µA @ 1200 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
VS-26MB60A

VS-26MB60A

BRIDGE RECT 1PHASE 600V 25A D-34

Vishay General Semiconductor - Diodes Division

89 -
VS-26MB60A

数据表

- 4-Square, D-34 Bulk Active Single Phase Standard 600 V 25 A - 10 µA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
KBPC3502-G

KBPC3502-G

BRIDGE RECT 1PHASE 200V 35A KBPC

Comchip Technology

98 -
KBPC3502-G

数据表

- 4-Square, KBPC Bulk Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - QC Terminal KBPC
VUO25-12NO8

VUO25-12NO8

BRIDGE RECT 3P 1.2KV 25A PWS-E

IXYS

98 -
VUO25-12NO8

数据表

- PWS-E Box Active Three Phase Standard 1.2 kV 25 A 2.2 V @ 150 A 300 µA @ 1200 V -40°C ~ 150°C (TJ) - - Chassis Mount PWS-E
VUO25-16NO8

VUO25-16NO8

BRIDGE RECT 3P 1.6KV 25A PWS-E

IXYS

24 -
VUO25-16NO8

数据表

- PWS-E Box Active Three Phase Standard 1.6 kV 25 A 2.2 V @ 150 A 300 µA @ 1600 V -40°C ~ 150°C (TJ) - - Chassis Mount PWS-E
FBE22-06N1

FBE22-06N1

BRIDGE RECT 1P 600V 20A I4-PAC

IXYS

73 -
FBE22-06N1

数据表

HiPerFRED²™ i4-Pac™-5 Tube Active Single Phase Standard 600 V 20 A 2.13 V @ 11 A 60 µA @ 600 V -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS i4-PAC™
VS-36MT10

VS-36MT10

BRIDGE RECT 3PHASE 100V 35A D-63

Vishay General Semiconductor - Diodes Division

49 -
VS-36MT10

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 100 V 35 A - 10 µA @ 100 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VS-36MT160

VS-36MT160

BRIDGE RECT 3P 1.6KV 35A D-63

Vishay General Semiconductor - Diodes Division

35 -
VS-36MT160

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 1.6 kV 35 A - 10 µA @ 1600 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VS-36MT80

VS-36MT80

BRIDGE RECT 3PHASE 800V 35A D-63

Vishay General Semiconductor - Diodes Division

66 -
VS-36MT80

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 800 V 35 A - 10 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VS-26MT60

VS-26MT60

BRIDGE RECT 3PHASE 600V 25A D-63

Vishay General Semiconductor - Diodes Division

34 -
VS-26MT60

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 600 V 25 A - 100 µA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VS-36MT120

VS-36MT120

BRIDGE RECT 3P 1.2KV 35A D-63

Vishay General Semiconductor - Diodes Division

42 -
VS-36MT120

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 1.2 kV 35 A - 10 µA @ 1200 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
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