桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
VS-GBPC2504A

VS-GBPC2504A

BRIDGE RECT 1P 400V 25A GBPC-A

Vishay General Semiconductor - Diodes Division

52 -
VS-GBPC2504A

数据表

VS-GBPC 4-Square, GBPC-A Tray Active Single Phase Standard 400 V 25 A - 2 mA @ 400 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
GBPC1501W

GBPC1501W

BRIDGE RECT 1P 100V 15A GBPC-W

onsemi

41 -
GBPC1501W

数据表

- 4-Square, GBPC-W Tray Active Single Phase Standard 100 V 15 A 1.1 V @ 7.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
VS-GBPC2510A

VS-GBPC2510A

BRIDGE RECT 1P 1KV 25A GBPC-A

Vishay General Semiconductor - Diodes Division

86 -
VS-GBPC2510A

数据表

VS-GBPC 4-Square, GBPC-A Tray Active Single Phase Standard 1 kV 25 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
VS-GBPC3506A

VS-GBPC3506A

BRIDGE RECT 1P 600V 35A GBPC-A

Vishay General Semiconductor - Diodes Division

36 -
VS-GBPC3506A

数据表

VS-GBPC 4-Square, GBPC-A Bulk Active Single Phase Standard 600 V 35 A - 2 mA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
VS-GBPC3502A

VS-GBPC3502A

BRIDGE RECT 1P 200V 35A GBPC-A

Vishay General Semiconductor - Diodes Division

81 -
VS-GBPC3502A

数据表

VS-GBPC 4-Square, GBPC-A Bulk Active Single Phase Standard 200 V 35 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
VS-GBPC3510W

VS-GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division

93 -
VS-GBPC3510W

数据表

VS-GBPC 4-Square, GBPC-W Tray Active Single Phase Standard 1 kV 35 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
VS-26MB40A

VS-26MB40A

BRIDGE RECT 1PHASE 400V 25A D-34

Vishay General Semiconductor - Diodes Division

35 -
VS-26MB40A

数据表

- 4-Square, D-34 Bulk Active Single Phase Standard 400 V 25 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
VS-26MB120A

VS-26MB120A

BRIDGE RECT 1P 1.2KV 25A D-34

Vishay General Semiconductor - Diodes Division

44 -
VS-26MB120A

数据表

- 4-Square, D-34 Bulk Active Single Phase Standard 1.2 kV 25 A - 10 µA @ 1200 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
KBPC3508-G

KBPC3508-G

BRIDGE RECT 1PHASE 800V 35A KBPC

Comchip Technology

72 -
KBPC3508-G

数据表

- 4-Square, KBPC Tray Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal KBPC
KBPC3510W-G

KBPC3510W-G

BRIDGE RECT 1P 1KV 35A KBPC-W

Comchip Technology

47 -
KBPC3510W-G

数据表

- 4-Square, KBPC-W Tray Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole KBPC-W
VS-36MB140A

VS-36MB140A

BRIDGE RECT 1P 1.4KV 35A D-34

Vishay General Semiconductor - Diodes Division

9 -
VS-36MB140A

数据表

- 4-Square, D-34 Bulk Active Single Phase Standard 1.4 kV 35 A - 10 µA @ 1400 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
VBO22-16NO8

VBO22-16NO8

BRIDGE RECT 1P 1.6KV 21A FO-B

IXYS

79 -
VBO22-16NO8

数据表

- 4-Square, FO-B Box Active Single Phase Standard 1.6 kV 21 A 2.2 V @ 150 A 300 µA @ 1600 V -40°C ~ 150°C (TJ) - - QC Terminal FO-B
VUO36-12NO8

VUO36-12NO8

BRIDGE RECT 3P 1.2KV 27A FO-B

IXYS

46 -
VUO36-12NO8

数据表

- 5-Square, FO-B Box Active Three Phase Standard 1.2 kV 27 A 1.04 V @ 15 A 40 µA @ 1200 V -40°C ~ 150°C (TJ) - - QC Terminal FO-B
VS-36MT20

VS-36MT20

BRIDGE RECT 3PHASE 200V 35A D-63

Vishay General Semiconductor - Diodes Division

14 -
VS-36MT20

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 200 V 35 A - 10 µA @ 200 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VS-36MT40

VS-36MT40

BRIDGE RECT 3PHASE 400V 35A D-63

Vishay General Semiconductor - Diodes Division

9 -
VS-36MT40

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 400 V 35 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VUO36-16NO8

VUO36-16NO8

BRIDGE RECT 3P 1.6KV 27A FO-B

IXYS

85 -
VUO36-16NO8

数据表

- 5-Square, FO-B Box Active Three Phase Standard 1.6 kV 27 A 1.04 V @ 15 A 40 µA @ 1600 V -40°C ~ 150°C (TJ) - - QC Terminal FO-B
VS-26MT80

VS-26MT80

BRIDGE RECT 3PHASE 800V 25A D-63

Vishay General Semiconductor - Diodes Division

32 -
VS-26MT80

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 800 V 25 A - 100 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VS-36MT100

VS-36MT100

BRIDGE RECT 3PHASE 1KV 35A D-63

Vishay General Semiconductor - Diodes Division

17 -
VS-36MT100

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 1 kV 35 A - 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VUO86-12NO7

VUO86-12NO7

BRIDGE RECT 3P 1.2KV 86A ECOPAC1

IXYS

15 -
VUO86-12NO7

数据表

- ECO-PAC1 Box Active Three Phase Standard 1.2 kV 86 A 1.14 V @ 30 A 40 µA @ 1200 V -40°C ~ 150°C (TJ) - - Chassis Mount ECO-PAC1
VS-26MT120

VS-26MT120

BRIDGE RECT 3P 1.2KV 25A D-63

Vishay General Semiconductor - Diodes Division

23 -
VS-26MT120

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 1.2 kV 25 A - 100 µA @ 1200 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
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