场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
G085C03D32

G085C03D32

MOSFET N/P-CH 30V 28A 8DFN

Goford Semiconductor

5,000 -
G085C03D32

数据表

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 28A (Tc), 12A (Tc) 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V 2V @ 250µA 18nC @ 10V, 25nC @ 10V 1085pF @ 15V, 1352pF @ 15V 13W (Tc), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G160N04S2

G160N04S2

MOSFET 2N-CH 40V 9A 8SOP

Goford Semiconductor

4,000 -
G160N04S2

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 9A (Tc) 15mOhm @ 4A, 10V 2V @ 250µA 24nC @ 10V 989pF @ 20V 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FDZ1827NZ

FDZ1827NZ

MOSFET 2N-CH 20V 10A 6WLCSP

Fairchild Semiconductor

20,000 -
FDZ1827NZ

数据表

PowerTrench® 6-XFBGA, WLCSP Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 10A (Ta) 13mOhm @ 1A, 4.5V 1.2V @ 250µA 24nC @ 10V 2055pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1.3x2.3)
G350N06D32

G350N06D32

MOSFET 2N-CH 60V 10A 8DFN

Goford Semiconductor

5,000 -
G350N06D32

数据表

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 10A (Tc) 35mOhm @ 5A, 10V 2.5V @ 250µA 25nC @ 10V 1330pF @ 30V 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G170P02D32

G170P02D32

MOSFET P-CH 20V 20A DUAL DFN3*3-

Goford Semiconductor

5,000 -
G170P02D32

数据表

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 20V 20A (Tc) 21mOhm @ 6A, 4.5V 1V @ 250µA 2.5nC @ 10V 2193pF @ 10V - -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G4616

G4616

MOSFET N/P-CH 40V 8A/7A 8SOP

Goford Semiconductor

40,000 -
G4616

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 40V 8A (Tc), 7A (Tc) 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V 2.5V @ 250µA 12nC @ 10V, 13nC @ 10V 415pF @ 20V, 520pF @ 20V 2W (Tc), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
NTEFD2KS26NTCG

NTEFD2KS26NTCG

NCH 12V 20A WLCSP DUAL

onsemi

1,360,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
UPA602T-T2-A

UPA602T-T2-A

MOSFET 2N-CH 50V 0.1A SC-59

Renesas Electronics Corporation

51,620 -
UPA602T-T2-A

数据表

- SC-59-6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 50V 100mA 25Ohm @ 10mA, 10V 1.8V @ 1µA - 16pF @ 5V 300mW 150°C (TJ) - - Surface Mount SC-59
G05NP06S2

G05NP06S2

MOSFET N/P-CH 60V 5A/3.1A 8SOP

Goford Semiconductor

28,000 -
G05NP06S2

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 5A (Tc), 3.1A (Tc) 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V 2V @ 250µA, 2.2V @ 250µA 22nC @ 10V, 37nC @ 10V 1336pF @ 30V, 1454pF @ 30V 2.5W (Tc), 1.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G05N06S2

G05N06S2

MOSFET 2N-CH 60V 5A 8SOP

Goford Semiconductor

20,000 -
G05N06S2

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 5A (Tc) 35mOhm @ 5A, 4.5V 2.5V @ 250µA 26nC @ 10V 1374pF @ 30V 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G1008B

G1008B

MOSFET 100V 8A 8SOP

Goford Semiconductor

4,000 -
G1008B

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 100V 8A (Tc) 130mOhm @ 2A, 10V 3V @ 250µA 15.5nC @ 10V 690pF @ 25V 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
PMCM650CUNEZ

PMCM650CUNEZ

MOSFET 20V

Nexperia USA Inc.

45,000 -
PMCM650CUNEZ

数据表

* - Bulk Active - - - - - - - - - - - - - - -
G170P03S2

G170P03S2

MOSFET P+P-CH 30V 11A SOP-8 DUAL

Goford Semiconductor

12,000 -
G170P03S2

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 30V 11A (Tc) 18mOhm @ 5A, 10V 2.5V @ 250µA 40nC @ -10V 1786pF @ -15V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
PHP225,118

PHP225,118

NEXPERIA PHP225 - SMALL SIGNAL F

NXP Semiconductors

4,434 -
PHP225,118

数据表

* - Bulk Active - - - - - - - - - - - - - - -
G06NP06S2

G06NP06S2

MOSFET N/P-CH 60V 6A 8SOP

Goford Semiconductor

20,000 -
G06NP06S2

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 6A (Tc) 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V 2.5V @ 250µA, 3.5V @ 250µA 22nC @ 10V, 25nC @ 10V 1350pF @ 30V, 2610pF @ 30V 2W (Tc), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
UPA2387T1P-E4-A

UPA2387T1P-E4-A

MOSFET

Renesas Electronics Corporation

80,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
FDML7610AS

FDML7610AS

DUAL N-CH. ER TRENCH MO

onsemi

27,000 -

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
ECH8662-TL-H

ECH8662-TL-H

ECH8662 - MOSFET 2 N-CHANNEL ARR

onsemi

3,000 -
ECH8662-TL-H

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FDC6304P

FDC6304P

MOSFET 2P-CH 25V 0.46A SSOT6

Fairchild Semiconductor

76,939 -
FDC6304P

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 25V 460mA 1.1Ohm @ 500mA, 4.5V 1.5V @ 250µA 1.5nC @ 4.5V 62pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
UPA1981TE-T1-A

UPA1981TE-T1-A

MOSFET N/P-CH 8V 2.8A SC95

Renesas

27,000 -
UPA1981TE-T1-A

数据表

- SC-95 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel - 8V 2.8A (Ta) 70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V 200mV @ 2.8A, 200mV @ 1.9A - - 1W (Ta) 150°C - - Surface Mount SC-95
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