场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
IRF7328TRPBF

IRF7328TRPBF

MOSFET 2P-CH 30V 8A 8SO

Infineon Technologies

5,840 -
IRF7328TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 8A 21mOhm @ 8A, 10V 2.5V @ 250µA 78nC @ 10V 2675pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
HT8KB6TB1

HT8KB6TB1

MOSFET 2N-CH 40V 8A 8HSMT

Rohm Semiconductor

6,890 -
HT8KB6TB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 8A (Ta), 15A (Tc) 17.2mOhm @ 8A, 10V 2.5V @ 1mA 10.6nC @ 10V 530pF @ 20V 2W (Ta), 14W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
IQE220N15NM5SCATMA1

IQE220N15NM5SCATMA1

MOSFET 2N-CH 150V 8WHSON

Infineon Technologies

6,934 -
IQE220N15NM5SCATMA1

数据表

OptiMOS™ 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 150V - - - - - - - - - Surface Mount PG-WHSON-8-1
FAM65CR51ADZ1

FAM65CR51ADZ1

MOSFET 2N-CH 650V 41A APMCD-B16

onsemi

3,999 -
FAM65CR51ADZ1

数据表

- 12-SSIP Exposed Pad, Formed Leads Tube Active Silicon Carbide (SiC) 2 N-Channel - 650V 41A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 189W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
NVXK2TR80WDT

NVXK2TR80WDT

MOSFET 4N-CH 1200V 20A APM32

onsemi

5,193 -
NVXK2TR80WDT

数据表

- 32-PowerDIP Module (1.311", 33.30mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVXK2VR80WXT2

NVXK2VR80WXT2

MOSFET 6N-CH 1200V 31A APM32

onsemi

3,969 -
NVXK2VR80WXT2

数据表

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVXK2PR80WXT2

NVXK2PR80WXT2

MOSFET 4N-CH 1200V 31A APM32

onsemi

2,267 -
NVXK2PR80WXT2

数据表

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
M1P45M12W2-1LA

M1P45M12W2-1LA

MOSFET 6N-CH 1200V ACEPACK DMT

STMicroelectronics

5,427 -
M1P45M12W2-1LA

数据表

ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 30A (Tc) 60.5mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
NVXK2VR80WDT2

NVXK2VR80WDT2

MOSFET 6N-CH 1200V 20A APM32

onsemi

2,337 -
NVXK2VR80WDT2

数据表

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
M1F80M12W2-1LA

M1F80M12W2-1LA

AUTOMOTIVE-GRADE ACEPACK DMT-32

STMicroelectronics

9,403 -
M1F80M12W2-1LA

数据表

* - Tube Active - - - - - - - - - - - - - - -
NXH040F120MNF1PG

NXH040F120MNF1PG

MOSFET 4N-CH 1200V 30A 22PIM

onsemi

6,006 -
NXH040F120MNF1PG

数据表

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
MSCSM120AM50T1AG

MSCSM120AM50T1AG

MOSFET 2N-CH 1200V 55A

Microchip Technology

7,822 -
MSCSM120AM50T1AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P90MNF1PG

NXH010P90MNF1PG

MOSFET 2N-CH 900V 154A

onsemi

3,091 -
NXH010P90MNF1PG

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 900V 154A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 328W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH010P120MNF1PG

NXH010P120MNF1PG

MOSFET 2N-CH 1200V 114A

onsemi

5,990 -
NXH010P120MNF1PG

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH020P120MNF1PG

NXH020P120MNF1PG

MOSFET 2N-CH 1200V 51A

onsemi

2,676 -
NXH020P120MNF1PG

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH006P120M3F2PTHG

NXH006P120M3F2PTHG

MOSFET 2N-CH 1200V 191A 36PIM

onsemi

1 -
NXH006P120M3F2PTHG

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 191A (Tc) 8mOhm @ 100A, 18V 4.4V @ 80mA 622nC @ 20V 11914pF @ 800V 556W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
A2U8M12W3-FC

A2U8M12W3-FC

MOSFET 4N-CH 750V/1.2KV 180A

STMicroelectronics

9,411 -
A2U8M12W3-FC

数据表

ECOPACK® Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 750V, 1.2kV 180A, 140A 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V 4.2V @ 2mA, 4V @ 2mA 288nC @ 18V, 304nC @ 18V 7660pF @ 400V, 7370pF @ 800V - -55°C ~ 150°C (TJ) - - Chassis Mount -
CAB011A12GM3

CAB011A12GM3

MOSFET 2N-CH 1200V 141A MODULE

Wolfspeed, Inc.

5,026 -
CAB011A12GM3

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 141A (Tj) 13.9mOhm @ 150A, 15V 3.9V @ 34mA 354nC @ 15V 11000pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
CAB008A12GM3T

CAB008A12GM3T

MOSFET 2N-CH 1200V 182A MODULE

Wolfspeed, Inc.

1 -
CAB008A12GM3T

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 182A (Tj) 10.4mOhm @ 150A, 15V 3.6V @ 46mA 472nC @ 15V 13600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
BSM300D12P4G101

BSM300D12P4G101

MOSFET 2N-CH 1200V 291A MODULE

Rohm Semiconductor

2,899 -
BSM300D12P4G101

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 291A (Tc) - 4.8V @ 145.6mA - 30000pF @ 10V 925W (Tc) 175°C (TJ) - - Chassis Mount Module
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