场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SSFK3220C

SSFK3220C

MOSFET 2N-CH 20V 0.8A SOT363

Good-Ark Semiconductor

4,870 -
SSFK3220C

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate, 1.5V Drive 20V 800mA (Tc) 300mOhm @ 500mA, 4.5V 1V @ 250µA 2nC @ 4.5V 75pF @ 30V 275mW (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
GSF7002DW

GSF7002DW

MOSFET 2N-CH 60V 0.34A SOT363

Good-Ark Semiconductor

4,627 -
GSF7002DW

数据表

- 6-TSSOP, SC-88, SOT-363 Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 340mA (Ta) 5Ohm @ 500mA, 10V 2.5V @ 1mA - 40pF @ 10V 150mW (Ta) 150°C (TJ) - - Surface Mount SOT-363
BSS138PS

BSS138PS

MOSFET 2N-CH 60V 0.3A SOT23-6

UMW

2,475 -
BSS138PS

数据表

- SOT-23-6 Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 300mA (Ta) 2Ohm @ 300mA, 10V 1.6V @ 250µA - 27pF @ 30V 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
PJT7002H_R1_00001

PJT7002H_R1_00001

MOSFET 2N-CH 60V 0.25A SOT363

Panjit International Inc.

2,285 -
PJT7002H_R1_00001

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 250mA (Ta) 5Ohm @ 300mA, 10V 3V @ 250µA 1.3nC @ 4.5V 22pF @ 25V 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
FDC6302P

FDC6302P

MOSFET 2P-CH 25V 0.12A SSOT6

onsemi

9,976 -
FDC6302P

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 25V 120mA 10Ohm @ 200mA, 4.5V 1.5V @ 250µA 0.31nC @ 4.5V 11pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
PMDPB42UN,115

PMDPB42UN,115

MOSFET 2N-CH 20V 3.9A 6HUSON

NXP USA Inc.

8,710 -
PMDPB42UN,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.9A 50mOhm @ 3.9A, 4.5V 1V @ 250µA 3.5nC @ 4.5V 185pF @ 10V 510mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
PMDPB56XN,115

PMDPB56XN,115

MOSFET 2N-CH 30V 3.1A 6HUSON

NXP USA Inc.

3,621 -
PMDPB56XN,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.1A 73mOhm @ 3.1A, 4.5V 1.5V @ 250µA 2.9nC @ 4.5V 170pF @ 15V 510mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
FDMB3900AN

FDMB3900AN

MOSFET 2N-CH 25V 7A 8MLP MICRO

onsemi

5,979 -
FDMB3900AN

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 7A 23mOhm @ 7A, 10V 3V @ 250µA 17nC @ 10V 890pF @ 13V 800mW -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP, MicroFET (3x1.9)
NTHD4401PT1G

NTHD4401PT1G

MOSFET 2P-CH 20V 2.1A CHIPFET

onsemi

9,031 -
NTHD4401PT1G

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.1A 155mOhm @ 2.1A, 4.5V 1.2V @ 250µA 6nC @ 4.5V 300pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
EMH2314-TL-H

EMH2314-TL-H

MOSFET 2P-CH 12V 5A 8EMH

onsemi

9,218 -
EMH2314-TL-H

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 5A 37mOhm @ 2.5A, 4.5V - 12nC @ 4.5V 1300pF @ 6V 1.2W 150°C (TJ) - - Surface Mount 8-EMH
VEC2610-TL-E

VEC2610-TL-E

PCH+NCH 1.8V DRIVE SERIES

onsemi

615,000 -
VEC2610-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FW216A-TL-2W

FW216A-TL-2W

MOSFET 2N-CH 35V 4.5A 8SOIC

onsemi

9,000 -
FW216A-TL-2W

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 35V 4.5A 64mOhm @ 4.5A, 10V - 5.6nC @ 10V 280pF @ 10V 2.2W 150°C (TJ) - - Surface Mount 8-SOIC
NTMD3P03R2

NTMD3P03R2

MOSFET PWR P-CHAN DUAL 30V 8SOIC

onsemi

185,434 -
NTMD3P03R2

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - -
FDC6320C

FDC6320C

MOSFET N/P-CH 25V 0.22A SSOT6

Fairchild Semiconductor

177,000 -
FDC6320C

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 25V 220mA, 120mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.4nC @ 4.5V 9.5pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
NTMD3N08LR2

NTMD3N08LR2

MOSFET 2N-CH 80V 2.3A 8SOIC

onsemi

106,090 -
NTMD3N08LR2

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 80V 2.3A 215mOhm @ 2.5A, 10V 3V @ 250µA 15nC @ 10V 480pF @ 25V 3.1W - - - Surface Mount 8-SOIC
NTHD4401PT3G

NTHD4401PT3G

MOSFET 2P-CH 20V 2.1A CHIPFET

onsemi

7,344 -
NTHD4401PT3G

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.1A 155mOhm @ 2.1A, 4.5V 1.2V @ 250µA 6nC @ 4.5V 300pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
FDMW2512NZ

FDMW2512NZ

MOSFET 2N-CH 20V 7.2A 6MLP

Fairchild Semiconductor

65,743 -
FDMW2512NZ

数据表

PowerTrench® 6-WFDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 7.2A (Ta) 26mOhm @ 7.2A, 4.5V 1.5V @ 250µA 13nC @ 10V 740pF @ 15V 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MLP (2x5)
SI9934DY

SI9934DY

MOSFET 2P-CH 20V 5A 8SOIC

Fairchild Semiconductor

20,523 -
SI9934DY

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 5A (Ta) 50mOhm @ 5A, 4.5V 1.5V @ 250µA 16nC @ 4.5V 1015pF @ 10V 900mW (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
EMH2603-TL-E

EMH2603-TL-E

PCH+NCH 1.8V DRIVE SERIES

onsemi

9,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
EMH2402-TL-E

EMH2402-TL-E

MOSFET N-CH

Sanyo

9,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
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