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    首页 > 产品  > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

    场效应晶体管（FETs）、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻） 导通电阻 (Rds On)（最大值）@ Id, Vgs 栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 栅极电压 (Vgs)（最大值） 输入电容 (Ciss)（最大值）@ Vds FET 特性 功耗（最大值） 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻） 导通电阻 (Rds On)（最大值）@ Id, Vgs 栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 栅极电压 (Vgs)（最大值） 输入电容 (Ciss)（最大值）@ Vds FET 特性 功耗（最大值） 工作温度 等级 认证 安装类型 供应商设备封装
    IRFU320PBF

    IRFU320PBF

    MOSFET N-CH 400V 3.1A TO251AA

    Vishay Siliconix

    		 2,342 -
    请求报价
    		IRFU320PBF

    数据表

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    NVMFS5C468NLWFAFT1G

    NVMFS5C468NLWFAFT1G

    MOSFET N-CH 40V 37A 5DFN

    onsemi

    		 1,205 -
    请求报价
    		NVMFS5C468NLWFAFT1G

    数据表

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 37A (Tc) 4.5V, 10V 10.3mOhm @ 20A, 10V 2V @ 250µA 7.3 nC @ 10 V ±20V 570 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    R6509ENXC7G

    R6509ENXC7G

    650V 9A TO-220FM, LOW-NOISE POWE

    Rohm Semiconductor

    		 974 -
    请求报价
    		R6509ENXC7G

    数据表

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Ta) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPA50R280CEXKSA2

    IPA50R280CEXKSA2

    MOSFET N-CH 500V 7.5A TO220

    Infineon Technologies

    		 450 -
    请求报价
    		IPA50R280CEXKSA2

    数据表

         		CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 7.5A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 30.4W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
    STU5N62K3

    STU5N62K3

    MOSFET N-CH 620V 4.2A IPAK

    STMicroelectronics

    		 3,000 -
    请求报价
    		STU5N62K3

    数据表

         		SuperMESH3™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 620 V 4.2A (Tc) 10V 1.6Ohm @ 2.1A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 680 pF @ 50 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    SISS02DN-T1-GE3

    SISS02DN-T1-GE3

    MOSFET N-CH 25V 51A/80A PPAK

    Vishay Siliconix

    		 2,988 -
    请求报价
    		SISS02DN-T1-GE3

    数据表

         		TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 51A (Ta), 80A (Tc) 4.5V, 10V 1.2mOhm @ 15A, 10V 2.2V @ 250µA 83 nC @ 10 V +16V, -12V 4450 pF @ 10 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    SQJ140EP-T1_GE3

    SQJ140EP-T1_GE3

    MOSFET N-CH 40V 266A PPAK SO-8

    Vishay Siliconix

    		 2,945 -
    请求报价
    		SQJ140EP-T1_GE3

    数据表

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 266A (Tc) 10V 2.1mOhm @ 15A, 10V 3.5V @ 250µA 64 nC @ 10 V ±20V 3855 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    PSMN5R0-40MSHX

    PSMN5R0-40MSHX

    MOSFET N-CH 40V 85A LFPAK33

    Nexperia USA Inc.

    		 2,661 -
    请求报价
    		PSMN5R0-40MSHX

    数据表

         		TrenchMOS™ SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 10V 5mOhm @ 20A, 10V 3.6V @ 1mA 29 nC @ 10 V ±20V 2010 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK33
    SIHP5N80AE-GE3

    SIHP5N80AE-GE3

    E SERIES POWER MOSFET TO-220AB,

    Vishay Siliconix

    		 988 -
    请求报价
    		SIHP5N80AE-GE3

    数据表

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SQ4410EY-T1_BE3

    SQ4410EY-T1_BE3

    MOSFET N-CH 30V 15A 8SOIC

    Vishay Siliconix

    		 4,728 -
    请求报价
    		SQ4410EY-T1_BE3

    数据表

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 53 nC @ 10 V ±20V 2385 pF @ 25 V - 5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    IRFR9014TRLPBF

    IRFR9014TRLPBF

    MOSFET P-CH 60V 5.1A DPAK

    Vishay Siliconix

    		 2,555 -
    请求报价
    		IRFR9014TRLPBF

    数据表

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    IRFU9010PBF

    IRFU9010PBF

    MOSFET P-CH 50V 5.3A TO251AA

    Vishay Siliconix

    		 527 -
    请求报价
    		IRFU9010PBF

    数据表

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    IXFA4N85X

    IXFA4N85X

    MOSFET N-CH 850V 3.5A TO263

    IXYS

    		 300 -
    请求报价
    		IXFA4N85X

    数据表

         		HiPerFET™, Ultra X TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (IXFA)
    SIR184LDP-T1-RE3

    SIR184LDP-T1-RE3

    N-CHANNEL 60 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,288 -
    请求报价
    		SIR184LDP-T1-RE3

    数据表

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 21.5A (Ta), 73A (Tc) 4.5V, 10V 5.4mOhm @ 10A, 10V 3V @ 250µA 41 nC @ 10 V ±20V 1950 pF @ 30 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    RXH100N03TB1

    RXH100N03TB1

    4V DRIVE NCH MOSFET: MOSFETS ARE

    Rohm Semiconductor

    		 2,442 -
    请求报价
    		RXH100N03TB1

    数据表

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 13mOhm @ 10A, 10V 2.5V @ 1mA 11 nC @ 5 V ±20V 800 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount 8-SOP
    TSM60NC390CH C5G

    TSM60NC390CH C5G

    600V, 11A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 12,986 -
    请求报价

    -

    		 - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 21.4 nC @ 10 V ±20V 818 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    STF5N60M2

    STF5N60M2

    MOSFET N-CH 600V 3.7A TO220FP

    STMicroelectronics

    		 1,959 -
    请求报价
    		STF5N60M2

    数据表

         		MDmesh™ II Plus TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Tc) 10V 1.4Ohm @ 1.85A, 10V 4V @ 250µA 4.5 nC @ 10 V ±25V 165 pF @ 100 V - 20W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    IRFU9020PBF

    IRFU9020PBF

    MOSFET P-CH 50V 9.9A TO251AA

    Vishay Siliconix

    		 8,140 -
    请求报价
    		IRFU9020PBF

    数据表

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    SI4686DY-T1-GE3

    SI4686DY-T1-GE3

    MOSFET N-CH 30V 18.2A 8SO

    Vishay Siliconix

    		 6,271 -
    请求报价
    		SI4686DY-T1-GE3

    数据表

         		TrenchFET®, WFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18.2A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 3W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIR450DP-T1-RE3

    SIR450DP-T1-RE3

    N-CHANNEL 45 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,629 -
    请求报价
    		SIR450DP-T1-RE3

    数据表

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 36A (Ta), 113A (Tc) 4.5V, 10V 1.8mOhm @ 10A, 10V 2.3V @ 250µA 114 nC @ 10 V +20V, -16V 5920 pF @ 20 V - 4.8W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
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