场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
PSMN7R0-100XS,127

PSMN7R0-100XS,127

MOSFET N-CH 100V 55A TO220F

NXP USA Inc.

3,012 -
PSMN7R0-100XS,127 数据表 - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 10V 6.8mOhm @ 15A, 10V 4V @ 1mA 121 nC @ 10 V ±20V 6686 pF @ 50 V - 57.7W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
BSF030NE2LQXUMA1

BSF030NE2LQXUMA1

MOSFET N-CH 25V 24A/75A 2WDSON

Infineon Technologies

2,372 -
BSF030NE2LQXUMA1 数据表 OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 75A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2V @ 250µA 23 nC @ 10 V ±20V 1700 pF @ 12 V - 2.2W (Ta), 28W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
IPB042N10N3GE8187ATMA1

IPB042N10N3GE8187ATMA1

MOSFET N-CH 100V 100A D2PAK

Infineon Technologies

8,825 -
IPB042N10N3GE8187ATMA1 数据表 OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.2mOhm @ 50A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPB180N03S4LH0ATMA1

IPB180N03S4LH0ATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies

3,008 -
IPB180N03S4LH0ATMA1 数据表 OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 0.95mOhm @ 100A, 10V 2.2V @ 200µA 300 nC @ 10 V ±16V 23000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
IPB45N04S4L08ATMA1

IPB45N04S4L08ATMA1

MOSFET N-CH 40V 45A TO263-3-2

Infineon Technologies

2,568 -
IPB45N04S4L08ATMA1 数据表 OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 7.6mOhm @ 45A, 10V 2.2V @ 17µA 30 nC @ 10 V +20V, -16V 2340 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPB65R660CFDATMA1

IPB65R660CFDATMA1

MOSFET N-CH 650V 6A D2PAK

Infineon Technologies

9,814 -
IPB65R660CFDATMA1 数据表 CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPD100N06S403ATMA1

IPD100N06S403ATMA1

MOSFET N-CH 60V 100A TO252-3-11

Infineon Technologies

7,368 -
IPD100N06S403ATMA1 数据表 OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD50N06S4L12ATMA1

IPD50N06S4L12ATMA1

MOSFET N-CH 60V 50A TO252-3-11

Infineon Technologies

5,397 -
IPD50N06S4L12ATMA1 数据表 OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 2.2V @ 20µA 40 nC @ 10 V ±16V 2890 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPD65R660CFDBTMA1

IPD65R660CFDBTMA1

MOSFET N-CH 650V 6A TO252-3

Infineon Technologies

2,884 -
IPD65R660CFDBTMA1 数据表 CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
BSB012NE2LX

BSB012NE2LX

MOSFET N-CH 25V 37A/170A 2WDSON

Infineon Technologies

4,230 -
BSB012NE2LX 数据表 OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 37A (Ta), 170A (Tc) 4.5V, 10V 1.2mOhm @ 30A, 10V 2V @ 250µA 67 nC @ 10 V ±20V 4900 pF @ 12 V - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
BSS84PH6327XTSA1

BSS84PH6327XTSA1

MOSFET P-CH 60V 170MA SOT23-3

Infineon Technologies

2,496 -
BSS84PH6327XTSA1 数据表 SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 8Ohm @ 170mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT23
SN7002NH6327XTSA1

SN7002NH6327XTSA1

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies

5,790 -
SN7002NH6327XTSA1 数据表 SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-SOT23
BUZ30AHXKSA1

BUZ30AHXKSA1

MOSFET N-CH 200V 21A TO220-3

Infineon Technologies

3,465 -
BUZ30AHXKSA1 数据表 SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
BUZ31L H

BUZ31L H

MOSFET N-CH 200V 13.5A TO220-3

Infineon Technologies

5,954 -
BUZ31L H 数据表 SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13.5A (Tc) 5V 200mOhm @ 7A, 5V 2V @ 1mA - ±20V 1600 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUZ32 H

BUZ32 H

MOSFET N-CH 200V 9.5A TO220-3

Infineon Technologies

9,378 -
BUZ32 H 数据表 SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 400mOhm @ 6A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUZ73H3046XKSA1

BUZ73H3046XKSA1

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies

3,025 -
BUZ73H3046XKSA1 数据表 SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUZ73A H

BUZ73A H

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies

8,993 -
BUZ73A H 数据表 SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUZ73A H3046

BUZ73A H3046

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies

9,890 -
BUZ73A H3046 数据表 SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUZ73LHXKSA1

BUZ73LHXKSA1

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies

4,472 -
BUZ73LHXKSA1 数据表 SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 5V 400mOhm @ 3.5A, 5V 2V @ 1mA - ±20V 840 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPA65R110CFDXKSA1

IPA65R110CFDXKSA1

MOSFET N-CH 650V 31.2A TO220

Infineon Technologies

6,689 -
IPA65R110CFDXKSA1 数据表 CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
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