场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NVMFS016N10MCLT1G

NVMFS016N10MCLT1G

PTNG 100V LL SO8FL

onsemi

1,165 -
NVMFS016N10MCLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10.9A (Ta), 46A (Tc) 4.5V, 10V 14mOhm @ 11A, 10V 3V @ 64µA 19 nC @ 10 V ±20V 1250 pF @ 50 V - 3.6W (Ta), 64W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
XP10NA8R4IT

XP10NA8R4IT

MOSFET N-CH 100V 44A TO220CFM

YAGEO XSEMI

1,000 -
XP10NA8R4IT

数据表

XP10NA8R4 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 8.4mOhm @ 24A, 10V 4V @ 250µA 67.2 nC @ 10 V ±20V 3248 pF @ 80 V - 1.92W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
STP80N1K1K6

STP80N1K1K6

Linear IC's

STMicroelectronics

993 -
STP80N1K1K6

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.1Ohm @ 1.7A, 10V 4V @ 50µA 5.7 nC @ 10 V ±30V 300 pF @ 400 V - 62W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
XP3N1R8MT

XP3N1R8MT

FET N-CH 30V 40.6A 165A PMPAK

YAGEO XSEMI

973 -
XP3N1R8MT

数据表

XP3N1R8 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 40.6A (Ta), 165A (Tc) 4.5V, 10V 1.89mOhm @ 20A, 10V 3V @ 250µA 60 nC @ 4.5 V ±20V 4850 pF @ 25 V - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PMPAK® 5 x 6
DI020P06PT

DI020P06PT

MOSFET PWRQFN 3X3 -60V 0.045OHM

Diotec Semiconductor

4,997 -
DI020P06PT

数据表

- - Tape & Reel (TR) Active P-Channel - - 20A - - - - - - - 29.7W - - - Surface Mount PowerQFN 3x3
RQ1E070RPHZGTR

RQ1E070RPHZGTR

PCH -30V -7A SMALL SIGNAL MOSFET

Rohm Semiconductor

2,980 -
RQ1E070RPHZGTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4V, 10V 17mOhm @ 7A, 10V 2.5V @ 1mA 26 nC @ 4 V ±20V 2700 pF @ 10 V - 1.1W (Ta) -55°C ~ 150°C Automotive AEC-Q101 Surface Mount TSMT8
TSM043NB04LCZ C0G

TSM043NB04LCZ C0G

40V, 124A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

3,944 -
TSM043NB04LCZ C0G

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 124A (Tc) 4.5V, 10V 4.3mOhm @ 16A, 10V 2.5V @ 250µA 76 nC @ 10 V ±20V 4387 pF @ 20 V - 2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
SQS120ELNW-T1_GE3

SQS120ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 30 V (D-S)

Vishay Siliconix

3,000 -
SQS120ELNW-T1_GE3

数据表

TrenchFET® PowerPAK® 1212-8SLW Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 192A (Tc) 4.5V, 10V 1.8mOhm @ 10A, 10V 2.5V @ 250µA 88 nC @ 10 V ±20V 4590 pF @ 25 V - 119W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
NVTYS008N06CLTWG

NVTYS008N06CLTWG

T6 60V N-CH LL IN LFPAK33

onsemi

2,820 -
NVTYS008N06CLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 63A (Tc) 4.5V, 10V 8mOhm @ 9A, 10V 2.2V @ 50µA 17 nC @ 10 V ±20V 1230 pF @ 25 V - 3.2W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
RQ1A070ZPHZGTR

RQ1A070ZPHZGTR

AUTOMOTIVE PCH -12V -7A SMALL SI

Rohm Semiconductor

2,314 -
RQ1A070ZPHZGTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 7A (Ta) 1.5V, 4.5V 12mOhm @ 7A, 4.5V 1V @ 1mA 58 nC @ 4.5 V ±10V 7400 pF @ 6 V - 1.1W (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount TSMT8
DMP4010SK3-13

DMP4010SK3-13

MOSFET P-CHANNEL 40V 50A TO252

Diodes Incorporated

1,406 -
DMP4010SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 9.9mOhm @ 9.8A, 10V 2.5V @ 250µA 91 nC @ 10 V ±25V 4234 pF @ 20 V - 3.3W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252 (DPAK)
XP50AN1K5I

XP50AN1K5I

MOSFET N-CH 500V 5A TO220CFM

YAGEO XSEMI

1,000 -
XP50AN1K5I

数据表

XP50AN1K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.55Ohm @ 2.5A, 10V 4V @ 250µA 24.6 nC @ 10 V ±30V 800 pF @ 100 V - 1.92W (Ta), 31.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
SIHF530-GE3

SIHF530-GE3

MOSFET N-CH 100V 14A TO220AB

Vishay Siliconix

971 -
SIHF530-GE3

数据表

- TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
MCU65P04-TP

MCU65P04-TP

P-CHANNEL MOSFET, DPAK

Micro Commercial Co

4,985 -
MCU65P04-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 65A (Tc) 10V 14mOhm @ 20A, 10V 2.5V @ 250µA 59.1 nC @ 10 V ±20V 3354 pF @ 20 V - 96W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
DMPH4013SK3-13

DMPH4013SK3-13

MOSFET P-CH 40V 55A TO252 T&R

Diodes Incorporated

4,069 -
DMPH4013SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 55A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 3V @ 250µA 67 nC @ 10 V ±20V 4004 pF @ 20 V - 2.1W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252 (DPAK)
SIR164ADP-T1-GE3

SIR164ADP-T1-GE3

MOSFET N-CH 30V 35.9A/40A PPAK

Vishay Siliconix

2,814 -
SIR164ADP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35.9A (Ta), 40A (Tc) 4.5V, 10V 2.2mOhm @ 15A, 10V 2.2V @ 250µA 77 nC @ 10 V +20V, -16V 3595 pF @ 15 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
RQ3L060BGTB1

RQ3L060BGTB1

NCH 60V 15.5A, HSMT8, POWER MOSF

Rohm Semiconductor

2,790 -
RQ3L060BGTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta), 15.5A (Tc) 4.5V, 10V 38mOhm @ 6A, 10V 2.5V @ 1mA 5.5 nC @ 10 V ±20V 310 pF @ 30 V - 2W (Ta), 14W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
PJQ5433E-AU_R2_006A1

PJQ5433E-AU_R2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,760 -
PJQ5433E-AU_R2_006A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 15.7A (Ta), 75A (Tc) 4.5V, 10V 8.4mOhm @ 20A, 10V 2.5V @ 250µA 54 nC @ 10 V ±25V 2310 pF @ 25 V - 3.3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
NVTFS024N06CTAG

NVTFS024N06CTAG

MOSFET N-CH 60V 7A/24A 8WDFN

onsemi

1,490 -
NVTFS024N06CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 24A (Tc) 10V 22.6mOhm @ 3A, 10V 4V @ 20µA 5.7 nC @ 10 V ±20V 333 pF @ 30 V - 2.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
PJP75N06SA-AU_T0_006A1

PJP75N06SA-AU_T0_006A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

985 -
PJP75N06SA-AU_T0_006A1

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户