场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
PJQ5542V-AU_R2_002A1

PJQ5542V-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,980 -
PJQ5542V-AU_R2_002A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24.8A (Ta), 136A (Tc) 7V, 10V 3mOhm @ 20A, 10V 3.5V @ 50µA 43 nC @ 10 V ±20V 3050 pF @ 25 V - 3.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
IPP50R250CPXKSA1

IPP50R250CPXKSA1

LOW POWER_LEGACY

Infineon Technologies

500 -
IPP50R250CPXKSA1

数据表

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 520µA 36 nC @ 10 V ±20V 1420 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SISS4402DN-T1-GE3

SISS4402DN-T1-GE3

N-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix

11,900 -
SISS4402DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35.5A (Ta), 128A (Tc) 4.5V, 10V 2.2mOhm @ 15A, 10V 2.5V @ 250µA 70 nC @ 10 V +20V, -16V 3850 pF @ 20 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
TSM045NB06CR RLG

TSM045NB06CR RLG

MOSFET N-CH 60V 16A/104A 8PDFN

Taiwan Semiconductor Corporation

10,000 -
TSM045NB06CR RLG

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Ta), 104A (Tc) 10V 5mOhm @ 16A, 10V 4V @ 250µA 104 nC @ 10 V ±20V 6870 pF @ 30 V - 3.1W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5.2x5.75)
TSM018NB03CR RLG

TSM018NB03CR RLG

MOSFET N-CH 30V 29A/194A 8PDFN

Taiwan Semiconductor Corporation

4,850 -
TSM018NB03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta), 194A (Tc) 4.5V, 10V 1.8mOhm @ 29A, 10V 2.5V @ 250µA 120 nC @ 10 V ±20V 7252 pF @ 15 V - 3.1W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5x6)
NVMYS1D7N04CTWG

NVMYS1D7N04CTWG

T6 40V SL AIZU SINGLE NCH LFPAK

onsemi

2,854 -
NVMYS1D7N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 36.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 50A, 10V 4V @ 210µA 50 nC @ 10 V ±20V 3125 pF @ 25 V - 3.9W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
TN2640LG-G

TN2640LG-G

MOSFET N-CH 400V 260MA 8SOIC

Microchip Technology

2,593 -
TN2640LG-G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 260mA (Tj) 4.5V, 10V 5Ohm @ 500mA, 10V 2V @ 2mA - ±20V 225 pF @ 25 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
MCU019N15YH-TP

MCU019N15YH-TP

POWER MOSFET

Micro Commercial Co

2,430 -
MCU019N15YH-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 55A (Tc) 6V, 10V 19mOhm @ 25A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 2530 pF @ 75 V - 150W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
TK10P50W,RQ

TK10P50W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

1,609 -
TK10P50W,RQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C - - Surface Mount DPAK
NVMYS1D6N04CLTWG

NVMYS1D6N04CLTWG

T6 40V LL AIZU SINGLE NCH LFPAK

onsemi

1,500 -
NVMYS1D6N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 3V @ 210µA 71 nC @ 10 V ±20V 4301 pF @ 25 V - 3.8W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
NVTFS5C460NLWFTAG

NVTFS5C460NLWFTAG

MOSFET N-CH 40V 19A/74A 8WDFN

onsemi

1,475 -
NVTFS5C460NLWFTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 74A (Tc) 4.5V, 10V 4.8mOhm @ 35A, 10V 2V @ 40µA 11 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
IPA052N08NM5SXKSA1

IPA052N08NM5SXKSA1

MOSFET N-CH 80V 64A TO220

Infineon Technologies

360 -
IPA052N08NM5SXKSA1

数据表

OptiMOS™ 5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 5.2mOhm @ 32A, 10V 3.8V @ 65µA 56 nC @ 10 V ±20V 3800 pF @ 40 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
SISH116DN-T1-GE3

SISH116DN-T1-GE3

MOSFET N-CH 40V 10.5A PPAK

Vishay Siliconix

6,000 -
SISH116DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 10.5A (Ta) 4.5V, 10V 7.8mOhm @ 16.4A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
DI068P04D1-AQ

DI068P04D1-AQ

MOSFET, DPAK, -40V, -68A, 0, 54W

Diotec Semiconductor

4,590 -
DI068P04D1-AQ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel - - 68A - - - - - - - 54W - - - Surface Mount TO-252 (DPAK)
R6007RND3TL1

R6007RND3TL1

600V 7A TO-252, PRESTOMOS WITH I

Rohm Semiconductor

3,017 -
R6007RND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 15V 940mOhm @ 3.5A, 15V 7V @ 1mA 17.5 nC @ 15 V ±30V 460 pF @ 100 V - 96W (Tc) 150°C (TJ) - - Surface Mount TO-252
PJD50N04V-AU_L2_002A1

PJD50N04V-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD50N04V-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 16.8A (Ta), 80A (Tc) 7V, 10V 5.9mOhm @ 20A, 10V 3.5V @ 50µA 23 nC @ 10 V ±20V 1287 pF @ 25 V - 3W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
RD3P06BBKHRBTL

RD3P06BBKHRBTL

NCH 100V 59A, TO-252 (DPAK), POW

Rohm Semiconductor

2,945 -
RD3P06BBKHRBTL

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PSMN4R1-60YLX

PSMN4R1-60YLX

MOSFET N-CH 60V 100A LFPAK56

Nexperia USA Inc.

2,713 -
PSMN4R1-60YLX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V, 10V 4.1mOhm @ 25A, 10V 2.1V @ 1mA 103 nC @ 10 V ±20V 7853 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
R6009KND3TL1

R6009KND3TL1

NCH 600V 9A TO-252, HIGH-SPEED S

Rohm Semiconductor

2,500 -
R6009KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 94W (Tc) 150°C (TJ) - - Surface Mount TO-252
DI5A7N65D1K-AQ

DI5A7N65D1K-AQ

MOSFET, DPAK, 650V, 5.7A, 150C,

Diotec Semiconductor

2,480 -
DI5A7N65D1K-AQ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 5.7A (Tc) 10V 430mOhm @ 4A, 10V 4V @ 250µA 18.4 nC @ 10 V ±30V 722 pF @ 325 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
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