场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
STF16N65M2

STF16N65M2

MOSFET N-CH 650V 11A TO220FP

STMicroelectronics

998 -
STF16N65M2

数据表

MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 19.5 nC @ 10 V ±25V 718 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
STD16N60M6

STD16N60M6

MOSFET N-CH 600V 12A DPAK

STMicroelectronics

2,347 -
STD16N60M6

数据表

MDmesh™ M6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4.75V @ 250µA 16.7 nC @ 10 V ±25V 575 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NVMFS5C670NWFT1G

NVMFS5C670NWFT1G

MOSFET N-CH 60V 17A/71A 5DFN

onsemi

5,135 -
NVMFS5C670NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 71A (Tc) 10V 7mOhm @ 11A, 10V 4V @ 53µA 14.4 nC @ 10 V ±20V 1035 pF @ 30 V - 3.6W (Ta), 61W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
DMTH84M1SPSQ-13

DMTH84M1SPSQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,500 -
DMTH84M1SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 4209 pF @ 40 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
RD3G08CBKHRBTL

RD3G08CBKHRBTL

NCH 40V 80A, TO-252 (DPAK), POWE

Rohm Semiconductor

2,500 -
RD3G08CBKHRBTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 80A, 10V 2.5V @ 924µA 41 nC @ 10 V ±20V 2570 pF @ 20 V - 96W (Tc) 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
DMTH10H4M5LPSWQ-13

DMTH10H4M5LPSWQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,170 -
DMTH10H4M5LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta), 107A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V 2.5V @ 250µA 80 nC @ 10 V ±20V 4843 pF @ 50 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
SIHP4N80E-BE3

SIHP4N80E-BE3

N-CHANNEL 600V

Vishay Siliconix

990 -
SIHP4N80E-BE3

数据表

E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHF640S-GE3

SIHF640S-GE3

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix

940 -
SIHF640S-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFI9610GPBF

IRFI9610GPBF

MOSFET P-CH 200V 2A TO220-3

Vishay Siliconix

918 -
IRFI9610GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 10V 3Ohm @ 1.2A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 180 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

863 -
IPB80N06S2L11ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 10.7mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
DI080N06PQ-AQ

DI080N06PQ-AQ

MOSFET POWERQFN 5X6 N 65V 105A 0

Diotec Semiconductor

4,820 -
DI080N06PQ-AQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65 V 80A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 4128 pF @ 30 V - 80W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-QFN (5x6)
PJD55P03E-AU_L2_006A1

PJD55P03E-AU_L2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD55P03E-AU_L2_006A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 12.4A (Ta), 48A (Tc) 4.5V, 10V 12.1mOhm @ 20A, 10V 2.5V @ 250µA 34 nC @ 10 V ±25V 1610 pF @ 25 V - 3W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
IPD65R420CFDAATMA1

IPD65R420CFDAATMA1

MOSFET N-CH 650V 8.7A TO252-3

Infineon Technologies

2,178 -
IPD65R420CFDAATMA1

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 345µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3
R6010YND3TL1

R6010YND3TL1

600V 10A TO-252, HIGH-SPEED SWIT

Rohm Semiconductor

2,500 -
R6010YND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V 6V @ 1.2mA 15 nC @ 10 V ±30V 600 pF @ 100 V - 92W (Tc) 150°C (TJ) - - Surface Mount TO-252
IPA040N06NXKSA1

IPA040N06NXKSA1

MOSFET N-CH 60V 69A TO220-FP

Infineon Technologies

420 -
IPA040N06NXKSA1

数据表

OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 69A (Tc) 6V, 10V 4mOhm @ 69A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3375 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
IPD033N06NATMA1

IPD033N06NATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

2,063 -
IPD033N06NATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 3.3mOhm @ 90A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3400 pF @ 30 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
NTMYS3D5N04CTWG

NTMYS3D5N04CTWG

MOSFET N-CH 40V 24A/102A LFPAK4

onsemi

3,000 -
NTMYS3D5N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 102A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 60µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
NTMYS2D9N04CLTWG

NTMYS2D9N04CLTWG

MOSFET N-CH 40V 27A/110A 4LFPAK

onsemi

2,306 -
NTMYS2D9N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 110A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V 2V @ 11µA 35 nC @ 10 V ±20V 2100 pF @ 20 V - 3.7W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
NVMYS1D2N04CLTWG

NVMYS1D2N04CLTWG

MOSFET N-CH 40V 44A/258A LFPAK4

onsemi

2,990 -
NVMYS1D2N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 44A (Ta), 258A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 180µA 109 nC @ 10 V ±20V 6330 pF @ 20 V - 3.9W (Ta), 134W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
NVMFS6H858NT1G

NVMFS6H858NT1G

MOSFET N-CH 80V 8.4A/29A 5DFN

onsemi

1,500 -
NVMFS6H858NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 8.4A (Ta), 29A (Tc) 10V 20.7mOhm @ 5A, 10V 4V @ 30µA 8.9 nC @ 10 V ±20V 510 pF @ 40 V - 3.5W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
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