场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NVMFS5C430NWFET1G

NVMFS5C430NWFET1G

T6-40V N 1.7 MOHMS SL

onsemi

1,500 -
NVMFS5C430NWFET1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
IPP020N06NXKSA1

IPP020N06NXKSA1

TRENCH 40<-<100V

Infineon Technologies

498 -
IPP020N06NXKSA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.3V @ 143µA 124 nC @ 10 V ±20V 9750 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP120N04S402AKSA1

IPP120N04S402AKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies

302 -
IPP120N04S402AKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.1mOhm @ 100A, 10V 4V @ 110µA 134 nC @ 10 V ±20V 10740 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP70N12S311AKSA1

IPP70N12S311AKSA1

MOSFET N-CHANNEL_100+

Infineon Technologies

280 -
IPP70N12S311AKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 11.6mOhm @ 70A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
DIT195N08

DIT195N08

MOSFET TO220AB N 85V 0.0035OHM

Diotec Semiconductor

981 -
DIT195N08

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 85 V 195A (Tc) 10V 4.95mOhm @ 40A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 16880 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
PSMB050N10NS2_R2_00601

PSMB050N10NS2_R2_00601

100V/ 5MOHM/ LOW FOM MOSFET

Panjit International Inc.

642 -
PSMB050N10NS2_R2_00601

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tj) 6V, 10V 5mOhm @ 50A, 10V 3.8V @ 270µA 53 nC @ 10 V ±20V 3910 pF @ 50 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
MCGWF60N04YHE3-TP

MCGWF60N04YHE3-TP

POWER MOSFET

Micro Commercial Co

4,940 -
MCGWF60N04YHE3-TP

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 10V 3.9mOhm @ 40A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 2144 pF @ 20 V - 93W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
NTMFS5H409NLT3G

NTMFS5H409NLT3G

MOSFET N-CH 40V 41A/270A 5DFN

onsemi

9,829 -
NTMFS5H409NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 270A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V 2V @ 250µA 89 nC @ 10 V ±20V 5700 pF @ 20 V - 3.2W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
PJD55N04V-AU_L2_002A1

PJD55N04V-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD55N04V-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21.5A (Ta), 128A (Tc) 7V, 10V 3.6mOhm @ 20A, 10V 3.5V @ 50µA 34 nC @ 10 V ±20V 2540 pF @ 25 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
PSMP050N10NS2_T0_00601

PSMP050N10NS2_T0_00601

100V/ 5MOHM/ LOW FOM MOSFET

Panjit International Inc.

1,827 -
PSMP050N10NS2_T0_00601

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 5mOhm @ 50A, 10V 3.8V @ 270µA 53 nC @ 10 V ±20V 3910 pF @ 50 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
MCGWF60N06YHE3-TP

MCGWF60N06YHE3-TP

POWER MOSFET

Micro Commercial Co

5,000 -
MCGWF60N06YHE3-TP

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2.5V @ 250µA 34.5 nC @ 10 V ±20V 1666 pF @ 30 V - 60W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
FDMS4D4N08C

FDMS4D4N08C

MOSFET N-CH 80V 123A 8PQFN

onsemi

2,214 -
FDMS4D4N08C

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 123A (Tc) 6V, 10V 4.3mOhm @ 44A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 4090 pF @ 40 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6), Power56
NVMFWS2D5N08XT1G

NVMFWS2D5N08XT1G

T10 80V STD NCH MOSFET SO8FL PRE

onsemi

1,395 -
NVMFWS2D5N08XT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 156A (Tc) 10V 2.55mOhm @ 37A, 10V 3.6V @ 184µA 45 nC @ 10 V ±20V 3200 pF @ 40 V - 133W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
IPA90R800C3XKSA2

IPA90R800C3XKSA2

MOSFET N-CH 900V 6.9A TO220

Infineon Technologies

474 -
IPA90R800C3XKSA2

数据表

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPP90R800C3XKSA2

IPP90R800C3XKSA2

MOSFET N-CH 900V 6.9A TO220-3

Infineon Technologies

458 -
IPP90R800C3XKSA2

数据表

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
NVD260N65S3T4G

NVD260N65S3T4G

SF3 EASY AUTO 260MOHM DPAK

onsemi

3,594 -
NVD260N65S3T4G

数据表

SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 290µA 23.5 nC @ 10 V ±30V 1042 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
DMTH61M8LPSQ-13

DMTH61M8LPSQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

2,490 -
DMTH61M8LPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 225A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 3V @ 250µA 115.5 nC @ 10 V ±20V 8320 pF @ 30 V - 3.2W (Ta), 187.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type K)
NTMJS1D7N04CTWG

NTMJS1D7N04CTWG

MOSFET N-CH 40V 35A/185A 8LFPAK

onsemi

3,000 -
NTMJS1D7N04CTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 130µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
IAUCN04S6N007TATMA1

IAUCN04S6N007TATMA1

MOSFET_(20V 40V)

Infineon Technologies

1,624 -
IAUCN04S6N007TATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IQE046N08LM5ATMA1

IQE046N08LM5ATMA1

TRENCH 40<-<100V

Infineon Technologies

4,100 -
IQE046N08LM5ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 15.6A (Ta), 99A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 2.3V @ 47µA 38 nC @ 10 V ±20V 3250 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-5
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户