场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
CPH5805-TL-E

CPH5805-TL-E

NCH+SBD 4V DRIVE SERIES

onsemi

135,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3424-TL-E

CPH3424-TL-E

NCH 4V DRIVE SERIES

onsemi

111,000 -
CPH3424-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDN372S

FDN372S

MOSFET N-CH 30V 2.6A SUPERSOT3

Fairchild Semiconductor

105,449 -
FDN372S

数据表

PowerTrench® TO-236-3, SC-59, SOT-23-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 4.5V, 10V 40mOhm @ 2.6A, 10V 3V @ 1mA 8.1 nC @ 5 V ±16V 630 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
CPH6315-TL-E

CPH6315-TL-E

P-CHANNEL POWER MOSFET

onsemi

102,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
MMDF1300R2

MMDF1300R2

P-CHANNEL POWER MOSFET

onsemi

73,490 -
MMDF1300R2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH6413-TLD-E-ON

CPH6413-TLD-E-ON

MOSFET N-CH

onsemi

72,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH6429-TL-E

CPH6429-TL-E

MOSFET N-CH 60V 2A 6CPH

onsemi

63,074 -

-

- SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) - 220mOhm @ 1A, 4V - 4.2 nC @ 4 V - 325 pF @ 20 V - 1.6W (Ta) 150°C (TJ) - - Surface Mount 6-CPH
CPH6413-TLD-E

CPH6413-TLD-E

MOSFET N-CH

Sanyo

60,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH3427-TL-E

MCH3427-TL-E

MOSFET N-CH 20V 4A 3MCPH

onsemi

54,000 -
MCH3427-TL-E

数据表

- 3-SMD, Flat Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) - 52mOhm @ 2A, 4V - 6 nC @ 4 V - 400 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 3-MCPH
BSS138

BSS138

MOSFET, N-CH, SINGLE, 0.22A, 50V

Good-Ark Semiconductor

48,598 -
BSS138

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50 V 220mA (Tj) 4.5V, 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA 2.4 nC @ 10 V ±20V 30 pF @ 25 V - 430mW -55°C ~ 175°C - - Surface Mount SOT-23
MCH3402-TL-E

MCH3402-TL-E

NCH 4V DRIVE SERIES

onsemi

48,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3331-TL-E

CPH3331-TL-E

P-CHANNEL SILICON MOSFET

onsemi

33,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD80N02T4

NTD80N02T4

MOSFET N-CH 24V 80A DPAK

onsemi

5,233 -
NTD80N02T4

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24 V 80A (Tc) 4.5V, 10V 5.8mOhm @ 80A, 10V 3V @ 250µA 42 nC @ 4.5 V ±20V 2600 pF @ 20 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
2SK1726-TD-E

2SK1726-TD-E

NCH 4V DRIVE SERIES

onsemi

22,000 -
2SK1726-TD-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDME0106NZT

FDME0106NZT

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

21,625 -
FDME0106NZT

数据表

PowerTrench® 6-PowerUFDFN Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 1.8V, 4.5V 18mOhm @ 9A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±12V 865 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount MicroFet 1.6x1.6 Thin
NTD4906NA-35G

NTD4906NA-35G

MOSFET N-CH 30V 10.3A/54A IPAK

onsemi

5,046 -

-

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.3A (Ta), 54A (Tc) - 5.5mOhm @ 30A, 10V 2.2V @ 250µA 24 nC @ 10 V - 1932 pF @ 15 V - - - - - Through Hole IPAK
CPH3303-TL-E

CPH3303-TL-E

PCH 2.5V DRIVE SERIES

onsemi

15,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
GSFC3415C

GSFC3415C

MOSFET, P-CH, SINGLE, -4.00A, -2

Good-Ark Semiconductor

11,541 -
GSFC3415C

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 45mOhm @ 4A, 4.5V 0.9V @ 250µA   12 nC @ 4.5 V ±10V 950 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
GSFC4050

GSFC4050

MOSFET, N-CH, SINGLE, 5.00A, 40V

Good-Ark Semiconductor

8,544 -
GSFC4050

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 5A (Tc) 4.5V, 10V 50mOhm @ 4A, 10V 2.9V @ 250µA 8 nC @ 4.5 V ±20V 800 pF @ 25 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
IPU60R2K1CEBKMA1

IPU60R2K1CEBKMA1

MOSFET N-CH 600V 2.3A TO251-3

Infineon Technologies

7,532 -
IPU60R2K1CEBKMA1

数据表

CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
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