场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
STL260N4F7

STL260N4F7

MOSFET N-CH 40V 120A POWERFLAT

STMicroelectronics

2,187 -
STL260N4F7

数据表

STripFET™ F7 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.1mOhm @ 24A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 5000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerFlat™ (5x6)
STB140NF55T4

STB140NF55T4

MOSFET N-CH 55V 80A D2PAK

STMicroelectronics

1,979 -
STB140NF55T4

数据表

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 142 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPA95R310PFD7XKSA1

IPA95R310PFD7XKSA1

MOSFET N-CH 950V 8.7A TO220-3

Infineon Technologies

475 -
IPA95R310PFD7XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 8.7A (Tc) 10V 310mOhm @ 10.4A, 10V 3.5V @ 520µA 61 nC @ 10 V ±20V 1765 pF @ 400 V - 31W (Tc) -55°C ~ 150°C - - Through Hole PG-TO220-3-313
NTP7D3N15MC

NTP7D3N15MC

MOSFET N-CH 150V 12.1/101A TO220

onsemi

354 -
NTP7D3N15MC

数据表

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 12.1A (Ta), 101A (Tc) - 7.3mOhm @ 62A, 10V 4.5V @ 342µA 53 nC @ 10 V ±20V 4250 pF @ 75 V - 2.4W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
NTD360N80S3Z

NTD360N80S3Z

MOSFET N-CH 800V 13A DPAK

onsemi

4,938 -
NTD360N80S3Z

数据表

SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 6.5A, 10V 3.8V @ 300µA 25.3 nC @ 10 V ±20V 1143 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FCI7N60

FCI7N60

MOSFET N-CH 600V 7A I2PAK

onsemi

2,943 -
FCI7N60

数据表

SuperFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 920 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
IPL65R195C7AUMA1

IPL65R195C7AUMA1

MOSFET N-CH 650V 12A 4VSON

Infineon Technologies

1,137 -
IPL65R195C7AUMA1

数据表

CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 195mOhm @ 2.9A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 75W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
NVMFS5C628NLAFT1G

NVMFS5C628NLAFT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

1,064 -
NVMFS5C628NLAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

MOSFET N-CH 150V 64.6A PPAK

Vishay Siliconix

5,894 -
SIDR622DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 56.7A (Tc) 7.5V, 10V 17.7mOhm @ 20A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 1516 pF @ 75 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
STF20N65M5

STF20N65M5

MOSFET N-CH 650V 18A TO220FP

STMicroelectronics

2,192 -
STF20N65M5

数据表

MDmesh™ V TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1345 pF @ 100 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
IPP019N08NF2SAKMA1

IPP019N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

896 -
IPP019N08NF2SAKMA1

数据表

StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 191A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
NDP6060

NDP6060

MOSFET N-CH 60V 48A TO220-3

onsemi

647 -
NDP6060

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 25mOhm @ 24A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1800 pF @ 25 V - 100W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
NTP165N65S3H

NTP165N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

644 -
NTP165N65S3H

数据表

SuperFET® III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4V @ 1.6mA 35 nC @ 10 V ±30V 1808 pF @ 400 V - 142W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
STW18N60M2

STW18N60M2

MOSFET N-CH 600V 13A TO247

STMicroelectronics

417 -
STW18N60M2

数据表

MDmesh™ II Plus TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 791 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
FDP032N08B-F102

FDP032N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi

343 -
FDP032N08B-F102

数据表

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 100A, 10V 4.5V @ 250µA 144 nC @ 10 V ±20V 10965 pF @ 40 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
AOB66811L

AOB66811L

FET N CHANNEL 80V

Alpha & Omega Semiconductor Inc.

51,691 -
AOB66811L

数据表

AlphaSGT2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 44A (Ta), 140A (Tc) 8V, 10V 2.7mOhm @ 20A, 10V 3.8V @ 250µA 110 nC @ 10 V ±20V 5750 pF @ 40 V - 10W (Ta), 310W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI7370DP-T1-GE3

SI7370DP-T1-GE3

MOSFET N-CH 60V 9.6A PPAK SO-8

Vishay Siliconix

1,854 -
SI7370DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 9.6A (Ta) 10V 11mOhm @ 12A, 10V 4V @ 250µA 57 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SQM110N05-06L_GE3

SQM110N05-06L_GE3

MOSFET N-CH 55V 110A TO263

Vishay Siliconix

1,115 -
SQM110N05-06L_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4440 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPB80N06S2L06ATMA2

IPB80N06S2L06ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

891 -
IPB80N06S2L06ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
CSD17556Q5BT

CSD17556Q5BT

MOSFET N-CH 30V 100A 8VSON

Texas Instruments

632 -
CSD17556Q5BT

数据表

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Ta) 4.5V, 10V 1.4mOhm @ 40A, 10V 1.65V @ 250µA 39 nC @ 4.5 V ±20V 7020 pF @ 15 V - 3.1W (Ta), 191W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
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