单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 频率 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 功率 - 输出 额定电压 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 频率 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 功率 - 输出 额定电压 等级 认证 安装类型 供应商设备封装
CGH21240F

CGH21240F

RF MOSFET HEMT 28V 440117

MACOM Technology Solutions

54 -
CGH21240F

数据表

GaN 440117 Tray Active HEMT - 1.8GHz ~ 2.3GHz 15dB 28 V - - 1 A 240W 84 V - - Chassis Mount 440117
CGHV96050F2

CGHV96050F2

RF MOSFET HEMT 40V 440210

MACOM Technology Solutions

30 -
CGHV96050F2

数据表

GaN 440210 Tray Active HEMT - 7.9GHz ~ 9.6GHz 10dB 40 V 6A - 500 mA 70W 100 V - - - 440210
CGHV31500F1

CGHV31500F1

RF MOSFET HEMT 50V 440226

MACOM Technology Solutions

26 -
CGHV31500F1

数据表

- 440226 Tray Active HEMT - 2.7GHz ~ 3.1GHz 15dB 50 V - - 500 mA 500W 50 V - - - 440226
CGHV96130F

CGHV96130F

RF MOSFET HEMT 40V 440217

MACOM Technology Solutions

50 -
CGHV96130F

数据表

GaN 440217 Tray Active HEMT - 8.4GHz ~ 9.6GHz 13.8dB 40 V - - 1 A 130W 120 V - - Chassis Mount 440217
MMBF4416A

MMBF4416A

RF MOSFET JFET 15V SOT23-3

onsemi

33,914 -
MMBF4416A

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel 400MHz - 15 V 15mA 4dB 5 mA - 35 V - - Surface Mount SOT-23-3
MMBFJ309LT1G

MMBFJ309LT1G

RF MOSFET JFET SOT23-3

onsemi

15,670 -
MMBFJ309LT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - - - 30mA - - - 25 V - - Surface Mount SOT-23-3 (TO-236)
MMBFJ310LT3G

MMBFJ310LT3G

RF MOSFET JFET 10V SOT23-3

onsemi

14,933 -
MMBFJ310LT3G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - 12dB 10 V 60mA - 10 mA - 25 V - - Surface Mount SOT-23-3 (TO-236)
MMBFJ310LT1G

MMBFJ310LT1G

RF MOSFET JFET 10V SOT23-3

onsemi

13,631 -
MMBFJ310LT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - 12dB 10 V 60mA - 10 mA - 25 V - - Surface Mount SOT-23-3 (TO-236)
MMBFJ211

MMBFJ211

RF MOSFET JFET SOT23-3

onsemi

33,792 -
MMBFJ211

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - - - 20mA - - - 25 V - - Surface Mount SOT-23-3
SMMBFJ310LT3G

SMMBFJ310LT3G

RF MOSFET JFET 10V SOT23-3

onsemi

55,165 -
SMMBFJ310LT3G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - 12dB 10 V 60mA - 10 mA - 25 V Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
SMMBFJ309LT1G

SMMBFJ309LT1G

RF MOSFET JFET 25V SOT23-3

onsemi

31,763 -
SMMBFJ309LT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - - - 30mA - - - 25 V Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
3SK293(TE85L,F)

3SK293(TE85L,F)

RF MOSFET 6V USQ

Toshiba Semiconductor and Storage

33,895 -
3SK293(TE85L,F)

数据表

- SC-82A, SOT-343 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N-Channel Dual Gate 800MHz 22dB 6 V 30mA 2.5dB 10 mA - 12.5 V - - Surface Mount USQ
SAV-581+

SAV-581+

RF MOSFET E-PHEMT 3V MMM1362

Mini-Circuits

1,211 -
SAV-581+

数据表

- SC-82A, SOT-343 Tape & Reel (TR) Active E-pHEMT - 45MHz ~ 6GHz 22.3dB 3 V - 1.5dB 30 mA 20.5dBm 5 V - - Surface Mount MMM1362
SAV-331+

SAV-331+

RF MOSFET D-PHEMT 4V MMM1362

Mini-Circuits

999 -
SAV-331+

数据表

- SC-82A, SOT-343 Tape & Reel (TR) Active D-pHEMT - 10MHz ~ 4GHz 24.6dB 4 V - 0.9dB 60 mA 21.1dBm 5 V - - Surface Mount MMM1362
TAV2-14LN+

TAV2-14LN+

RF MOSFET E-PHEMT 4V

Mini-Circuits

1,134 -
TAV2-14LN+

数据表

- 6-TDFN Exposed Pad Tape & Reel (TR) Active E-pHEMT - 50MHz ~ 10GHz 23.4dB 4 V 2µA 2.5dB 4 mA 19.4dBm 5 V - - Surface Mount -
CE3512K2

CE3512K2

RF MOSFET PHEMT FET 2V 4MICROX

CEL

833 -
CE3512K2

数据表

- 4-Micro-X Strip Active pHEMT FET - 12GHz 13.7dB 2 V 15mA 0.5dB 10 mA 125mW 4 V - - - 4-Micro-X
AFT05MS006NT1

AFT05MS006NT1

RF MOSFET LDMOS 7.5V PLD-1.5W

NXP USA Inc.

1,163 -
AFT05MS006NT1

数据表

- PLD-1.5W Tape & Reel (TR) Not For New Designs LDMOS - 520MHz 18.3dB 7.5 V - - 100 mA 6W 30 V - - Surface Mount PLD-1.5W
PD55003TR-E

PD55003TR-E

RF MOSFET LDMOS 12.5V POWERSO10

STMicroelectronics

600 -
PD55003TR-E

数据表

- PowerSO-10 Exposed Bottom Pad Tape & Reel (TR) Active LDMOS - 500MHz 17dB 12.5 V 2.5A - 50 mA 3W 40 V - - - 10-PowerSO
PD55003S-E

PD55003S-E

RF MOSFET LDMOS 12.5V PWRSO-10RF

STMicroelectronics

638 -
PD55003S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Active LDMOS - 500MHz 17dB 12.5 V 2.5A - 50 mA 3W 40 V - - - PowerSO-10RF (Straight Lead)
PD55003-E

PD55003-E

RF MOSFET LDMOS 12.5V POWERSO10

STMicroelectronics

399 -
PD55003-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Active LDMOS - 500MHz 17dB 12.5 V 2.5A - 50 mA 3W 40 V - - - 10-PowerSO
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