存储器

存储器

存储器是用于数据存储,程序存储,缓存和系统运行支持的集成电路产品,广泛应用于工业控制,通信设备,消费电子,汽车电子,服务器,嵌入式系统,物联网终端和智能硬件等电子系统中.常见类型包括 FLASH 存储器,EEPROM,DRAM,SRAM,NAND 闪存,NOR 闪存,FRAM,MRAM 和存储卡控制相关器件等.

宝利科技作为专业电子元器件分销商,可为客户供应行业主流厂商的多系列存储器产品,包括美光(Micron),三星半导体(Samsung Semiconductor),SK 海力士(SK hynix),铠侠(Kioxia),旺宏(Macronix),华邦(Winbond),赛普拉斯(Cypress),英飞凌(Infineon),微芯科技(Microchip),意法半导体(STMicroelectronics)等品牌.您可在下方产品列表中查询所需存储器型号的库存,价格,封装规格,品牌,参数及 PDF 规格书等相关资料,并提交 BOM 或型号清单进行批量询价.

制造商 系列 封装/外壳 包装 产品状态 可编程 存储类型 存储格式 技术 存储容量 存储组织 存储接口 时钟频率 写周期时间 - 字,页 访问时间 电压 - 电源 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 存储格式 技术 存储容量 存储组织 存储接口 时钟频率 写周期时间 - 字,页 访问时间 电压 - 电源 工作温度 等级 认证 安装类型 供应商设备封装
S80KS5122GABHV020

S80KS5122GABHV020

IC PSRAM 512MBIT HYPERBUS 24FBGA

Infineon Technologies

262 -
S80KS5122GABHV020 数据表 HYPERRAM™ 24-VBGA Tray Active Not Verified Volatile PSRAM PSRAM (Pseudo SRAM) 512Mbit 64M x 8 HyperBus 200 MHz 35ns 35 ns 1.7V ~ 2V -40°C ~ 105°C (TA) - - Surface Mount 24-FBGA (6x8)
MR256A08BYS35

MR256A08BYS35

IC RAM 256KBIT PARALLEL 44TSOP2

Everspin Technologies Inc.

281 -
MR256A08BYS35 数据表 - 44-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Non-Volatile RAM MRAM (Magnetoresistive RAM) 256Kbit 32K x 8 Parallel - 35ns 35 ns 3V ~ 3.6V 0°C ~ 70°C (TA) - - Surface Mount 44-TSOP2
S26HL512TFPBHI000

S26HL512TFPBHI000

IC FLASH 512MBIT HYPERBUS 24FBGA

Infineon Technologies

188 -
S26HL512TFPBHI000 数据表 HL-T 24-VBGA Tray Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 64M x 8 HyperBus 166 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 24-FBGA (6x8)
MT25QL512ABB8E12-0SIT

MT25QL512ABB8E12-0SIT

IC FLASH 512MBIT SPI 24TPBGA

Micron Technology Inc.

364 -
MT25QL512ABB8E12-0SIT 数据表 - 24-TBGA Tray Active Verified Non-Volatile FLASH FLASH - NOR 512Mbit 64M x 8 SPI - Quad I/O 133 MHz 8ms, 2.8ms - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 24-T-PBGA (6x8)
AS4C256M16D4-83BIN

AS4C256M16D4-83BIN

IC DRAM 4GBIT POD 96FBGA

Alliance Memory, Inc.

4,434 -
AS4C256M16D4-83BIN 数据表 - 96-TFBGA Tray Not For New Designs Not Verified Volatile DRAM SDRAM - DDR4 4Gbit 256M x 16 POD 1.2 GHz 15ns 18 ns 1.14V ~ 1.26V -40°C ~ 95°C (TC) - - Surface Mount 96-FBGA (7.5x13.5)
S29GL512S10TFI020

S29GL512S10TFI020

IC FLASH 512MBIT PARALLEL 56TSOP

Infineon Technologies

1,105 -
S29GL512S10TFI020 数据表 GL-S 56-TFSOP (0.724", 18.40mm Width) Tray Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 32M x 16 Parallel - 60ns 100 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 56-TSOP
AS5F34G04SNDA-08LIN

AS5F34G04SNDA-08LIN

IC FLASH 4GBIT SPI/QUAD I/O 8LGA

Alliance Memory, Inc.

396 -
AS5F34G04SNDA-08LIN 数据表 - 8-WLGA Tray Active Not Verified Non-Volatile FLASH FLASH - NAND (SLC) 4Gbit 512M x 8 SPI - Quad I/O 120 MHz 700µs 7.5 ns 3V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 8-LGA (8x6)
AS4C256M16D4A-75BIN

AS4C256M16D4A-75BIN

IC DRAM 4GBIT POD 96FBGA

Alliance Memory, Inc.

225 -
AS4C256M16D4A-75BIN 数据表 - 96-TFBGA Tray Active Not Verified Volatile DRAM SDRAM - DDR4 4Gbit 256M x 16 POD 1.333 GHz 15ns 18 ns 1.14V ~ 1.26V -40°C ~ 95°C (TC) - - Surface Mount 96-FBGA (7.5x13)
IS61LF12836A-7.5TQLI

IS61LF12836A-7.5TQLI

IC SRAM 4.5MBIT PARALLEL 100TQFP

ISSI, Integrated Silicon Solution Inc

144 -
IS61LF12836A-7.5TQLI 数据表 - 100-LQFP Tray Active Not Verified Volatile SRAM SRAM - Synchronous, SDR 4.5Mbit 128K x 36 Parallel 117 MHz - 7.5 ns 3.135V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 100-LQFP (14x20)
S25FL512SAGBHIC13

S25FL512SAGBHIC13

IC FLASH 512MBIT SPI/QUAD 24BGA

Infineon Technologies

3,138 -
S25FL512SAGBHIC13 数据表 FL-S 24-TBGA Tape & Reel (TR) Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 64M x 8 SPI - Quad I/O 133 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 24-BGA (8x6)
S25FL512SAGMFI013

S25FL512SAGMFI013

IC FLASH 512MBIT SPI/QUAD 16SOIC

Infineon Technologies

1,295 -
S25FL512SAGMFI013 数据表 FL-S 16-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 64M x 8 SPI - Quad I/O 133 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 16-SOIC
S25FL512SAGBHIC10

S25FL512SAGBHIC10

IC FLASH 512MBIT SPI/QUAD 24BGA

Infineon Technologies

842 -
S25FL512SAGBHIC10 数据表 FL-S 24-TBGA Tray Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 64M x 8 SPI - Quad I/O 133 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 24-BGA (8x6)
S25FL512SDPMFIG11

S25FL512SDPMFIG11

IC FLASH 512MBIT SPI/QUAD 16SOIC

Infineon Technologies

798 -
S25FL512SDPMFIG11 数据表 FL-S 16-SOIC (0.295", 7.50mm Width) Tube Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 64M x 8 SPI - Quad I/O 66 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 16-SOIC
S25FL512SAGMFIG13

S25FL512SAGMFIG13

IC FLASH 512MBIT SPI/QUAD 16SOIC

Infineon Technologies

510 -
S25FL512SAGMFIG13 数据表 FL-S 16-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 64M x 8 SPI - Quad I/O 133 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 16-SOIC
S25FL512SAGMFIG11

S25FL512SAGMFIG11

IC FLASH 512MBIT SPI/QUAD 16SOIC

Infineon Technologies

207 -
S25FL512SAGMFIG11 数据表 FL-S 16-SOIC (0.295", 7.50mm Width) Tube Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 64M x 8 SPI - Quad I/O 133 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 16-SOIC
IS43LD16640C-25BLI

IS43LD16640C-25BLI

IC DRAM 1GBIT PARALLEL 134TFBGA

ISSI, Integrated Silicon Solution Inc

586 -
IS43LD16640C-25BLI 数据表 - 134-TFBGA Tray Active Not Verified Volatile DRAM SDRAM - Mobile LPDDR2-S4 1Gbit 64M x 16 Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TC) - - Surface Mount 134-TFBGA (10x11.5)
MR25H10CDFR

MR25H10CDFR

IC RAM 1MBIT SPI 40MHZ 8DFN

Everspin Technologies Inc.

2,556 -
MR25H10CDFR 数据表 - 8-VDFN Exposed Pad Tape & Reel (TR) Active Not Verified Non-Volatile RAM MRAM (Magnetoresistive RAM) 1Mbit 128K x 8 SPI 40 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 8-DFN-EP, Small Flag (5x6)
IS43LD16640C-25BLI-TR

IS43LD16640C-25BLI-TR

IC DRAM 1GBIT PARALLEL 134TFBGA

ISSI, Integrated Silicon Solution Inc

1,631 -
IS43LD16640C-25BLI-TR 数据表 - 134-TFBGA Tape & Reel (TR) Active Not Verified Volatile DRAM SDRAM - Mobile LPDDR2-S4 1Gbit 64M x 16 Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TC) - - Surface Mount 134-TFBGA (10x11.5)
RMLV1616AGBG-5S2#KC0

RMLV1616AGBG-5S2#KC0

IC SRAM 16MBIT PARALLEL 48TFBGA

Renesas Electronics Corporation

1,835 -
RMLV1616AGBG-5S2#KC0 数据表 - 48-TFBGA Tape & Reel (TR) Active Not Verified Volatile SRAM SRAM 16Mbit 1M x 16 Parallel - 55ns 55 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 48-TFBGA (7.5x8.5)
S29GL512S10DHI020

S29GL512S10DHI020

IC FLASH 512MBIT PARALLEL 64FBGA

Infineon Technologies

1,603 -
S29GL512S10DHI020 数据表 GL-S 64-LBGA Tray Active Not Verified Non-Volatile FLASH FLASH - NOR 512Mbit 32M x 16 Parallel - 60ns 100 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 64-FBGA (9x9)
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