存储器

存储器

存储器是用于数据存储,程序存储,缓存和系统运行支持的集成电路产品,广泛应用于工业控制,通信设备,消费电子,汽车电子,服务器,嵌入式系统,物联网终端和智能硬件等电子系统中.常见类型包括 FLASH 存储器,EEPROM,DRAM,SRAM,NAND 闪存,NOR 闪存,FRAM,MRAM 和存储卡控制相关器件等.

宝利科技作为专业电子元器件分销商,可为客户供应行业主流厂商的多系列存储器产品,包括美光(Micron),三星半导体(Samsung Semiconductor),SK 海力士(SK hynix),铠侠(Kioxia),旺宏(Macronix),华邦(Winbond),赛普拉斯(Cypress),英飞凌(Infineon),微芯科技(Microchip),意法半导体(STMicroelectronics)等品牌.您可在下方产品列表中查询所需存储器型号的库存,价格,封装规格,品牌,参数及 PDF 规格书等相关资料,并提交 BOM 或型号清单进行批量询价.

制造商 系列 封装/外壳 包装 产品状态 可编程 存储类型 存储格式 技术 存储容量 存储组织 存储接口 时钟频率 写周期时间 - 字,页 访问时间 电压 - 电源 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 存储格式 技术 存储容量 存储组织 存储接口 时钟频率 写周期时间 - 字,页 访问时间 电压 - 电源 工作温度 等级 认证 安装类型 供应商设备封装
MT53E1G32D2NP-053 RS WT:A

MT53E1G32D2NP-053 RS WT:A

IC DRAM 32GBIT FBGA

Micron Technology Inc.

0 -
MT53E1G32D2NP-053 RS WT:A 数据表 - - Bulk Obsolete Not Verified - DRAM SDRAM - Mobile LPDDR4 32Gbit 1G x 32 - - - - - - - - - -
MT40A4G4VA-062EPS:B

MT40A4G4VA-062EPS:B

IC DRAM 16GBIT PARALLEL 78FBGA

Micron Technology Inc.

0 -
MT40A4G4VA-062EPS:B 数据表 - 78-TFBGA Bulk Obsolete Not Verified Volatile DRAM SDRAM - DDR4 16Gbit 4G x 4 Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 78-FBGA (10x11)
MT40A4G4SA-062E PS:F

MT40A4G4SA-062E PS:F

IC DRAM 16GBIT PAR 78FBGA

Micron Technology Inc.

0 -
MT40A4G4SA-062E PS:F 数据表 - 78-TFBGA Bulk Active Not Verified Volatile DRAM SDRAM - DDR4 16Gbit 4G x 4 Parallel 1.5 GHz 15ns 19 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 78-FBGA (7.5x11)
MT40A2G8NEA-062E:J

MT40A2G8NEA-062E:J

IC DRAM 16GBIT PARALLEL 78FBGA

Micron Technology Inc.

0 -
MT40A2G8NEA-062E:J 数据表 - 78-TFBGA Bulk Obsolete Not Verified Volatile DRAM SDRAM - DDR4 16Gbit 2G x 8 Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 78-FBGA (7.5x11)
MT40A2G8NEA-062E:J TR

MT40A2G8NEA-062E:J TR

IC DRAM 16GBIT PARALLEL 78FBGA

Micron Technology Inc.

0 -
MT40A2G8NEA-062E:J TR 数据表 - 78-TFBGA Tape & Reel (TR) Obsolete Not Verified Volatile DRAM SDRAM - DDR4 16Gbit 2G x 8 Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 78-FBGA (7.5x11)
MT40A2G4SA-062EPS:J

MT40A2G4SA-062EPS:J

IC DRAM 8GBIT PARALLEL 78FBGA

Micron Technology Inc.

0 -
MT40A2G4SA-062EPS:J 数据表 - 78-TFBGA Bulk Obsolete Not Verified Volatile DRAM SDRAM - DDR4 8Gbit 2G x 4 Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 78-FBGA (7.5x11)
MT40A256M16TB-062E:G

MT40A256M16TB-062E:G

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.

0 -
MT40A256M16TB-062E:G 数据表 - 96-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM - DDR4 4Gbit 256M x 16 Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 96-FBGA (7.5x13)
MT40A1G4SA-062E:G

MT40A1G4SA-062E:G

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.

0 -
MT40A1G4SA-062E:G 数据表 - 78-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM - DDR4 4Gbit 1G x 4 Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 78-FBGA (7.5x11)
MT40A512M8SA-062E:G

MT40A512M8SA-062E:G

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.

0 -
MT40A512M8SA-062E:G 数据表 - 78-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM - DDR4 4Gbit 512M x 8 Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 78-FBGA (7.5x11)
R1EV5801MBTDRDI#B0

R1EV5801MBTDRDI#B0

IC EEPROM 1MBIT PAR 32TSOP I

Renesas Electronics Corporation

0 -
R1EV5801MBTDRDI#B0 数据表 R1EV5801MB 32-TFSOP (0.488", 12.40mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 1Mbit 128K x 8 Parallel - 10ms 150 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 32-TSOP I
R1EV58256BSCNBI#B2

R1EV58256BSCNBI#B2

IC EEPROM 256KBIT PARALLEL 28SOP

Renesas Electronics Corporation

0 -
R1EV58256BSCNBI#B2 数据表 R1EV58256BxxN 28-SOIC (0.330", 8.40mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 256Kbit 32K x 8 Parallel - 10ms 85 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 28-SOP
R1EV58064BTCRBI#B2

R1EV58064BTCRBI#B2

IC EEPROM 64KBIT PAR 28TSOP I

Renesas Electronics Corporation

0 -
R1EV58064BTCRBI#B2 数据表 R1EV58064BxxR 28-TSSOP (0.465", 11.80mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 64Kbit 8K x 8 Parallel - 10ms 100 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 28-TSOP I
R1EV58064BDARBI#B2

R1EV58064BDARBI#B2

IC EEPROM 64KBIT PARALLEL 28DIP

Renesas Electronics Corporation

0 -
R1EV58064BDARBI#B2 数据表 R1EV58064BxxR 28-DIP (0.600", 15.24mm) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 64Kbit 8K x 8 Parallel - 10ms 100 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Through Hole 28-DIP
R1EV58256BTDRBI#B2

R1EV58256BTDRBI#B2

IC EEPROM 256KBIT PAR 32TSOP I

Renesas Electronics Corporation

0 -
R1EV58256BTDRBI#B2 数据表 R1EV58256BxxR 32-TFSOP (0.488", 12.40mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 256Kbit 32K x 8 Parallel - 10ms 85 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 32-TSOP I
R1EV58256BDANBI#B2

R1EV58256BDANBI#B2

IC EEPROM 256KBIT PARALLEL 28DIP

Renesas Electronics Corporation

0 -
R1EV58256BDANBI#B2 数据表 R1EV58256BxxN 28-DIP (0.600", 15.24mm) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 256Kbit 32K x 8 Parallel - 10ms 85 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Through Hole 28-DIP
R1EV58256BTCNBI#B2

R1EV58256BTCNBI#B2

IC EEPROM 256KBIT PAR 28TSOP I

Renesas Electronics Corporation

0 -
R1EV58256BTCNBI#B2 数据表 R1EV58256BxxN 28-TSSOP (0.465", 11.80mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 256Kbit 32K x 8 Parallel - 10ms 85 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 28-TSOP I
R1EV58064BDANBI#B2

R1EV58064BDANBI#B2

IC EEPROM 64KBIT PARALLEL 28DIP

Renesas Electronics Corporation

0 -
R1EV58064BDANBI#B2 数据表 R1EV58064BxxN 28-DIP (0.600", 15.24mm) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 64Kbit 8K x 8 Parallel - 10ms 100 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Through Hole 28-DIP
R1EV58064BTCNBI#B2

R1EV58064BTCNBI#B2

IC EEPROM 64KBIT PAR 28TSOP I

Renesas Electronics Corporation

0 -
R1EV58064BTCNBI#B2 数据表 R1EV58064BxxN 28-TSSOP (0.465", 11.80mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 64Kbit 8K x 8 Parallel - 10ms 100 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 28-TSOP I
R1EV58064BSCNBI#B2

R1EV58064BSCNBI#B2

IC EEPROM 64KBIT PARALLEL 28SOP

Renesas Electronics Corporation

0 -
R1EV58064BSCNBI#B2 数据表 R1EV58064BxxN 28-SOIC (0.330", 8.40mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 64Kbit 8K x 8 Parallel - 10ms 100 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 28-SOP
R1EV58064BSCRBI#B2

R1EV58064BSCRBI#B2

IC EEPROM 64KBIT PARALLEL 28SOP

Renesas Electronics Corporation

0 -
R1EV58064BSCRBI#B2 数据表 R1EV58064BxxR 28-SOIC (0.330", 8.40mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM EEPROM 64Kbit 8K x 8 Parallel - 10ms 100 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 28-SOP
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