存储器

存储器

存储器是用于数据存储,程序存储,缓存和系统运行支持的集成电路产品,广泛应用于工业控制,通信设备,消费电子,汽车电子,服务器,嵌入式系统,物联网终端和智能硬件等电子系统中.常见类型包括 FLASH 存储器,EEPROM,DRAM,SRAM,NAND 闪存,NOR 闪存,FRAM,MRAM 和存储卡控制相关器件等.

宝利科技作为专业电子元器件分销商,可为客户供应行业主流厂商的多系列存储器产品,包括美光(Micron),三星半导体(Samsung Semiconductor),SK 海力士(SK hynix),铠侠(Kioxia),旺宏(Macronix),华邦(Winbond),赛普拉斯(Cypress),英飞凌(Infineon),微芯科技(Microchip),意法半导体(STMicroelectronics)等品牌.您可在下方产品列表中查询所需存储器型号的库存,价格,封装规格,品牌,参数及 PDF 规格书等相关资料,并提交 BOM 或型号清单进行批量询价.

制造商 系列 封装/外壳 包装 产品状态 可编程 存储类型 存储格式 技术 存储容量 存储组织 存储接口 时钟频率 写周期时间 - 字,页 访问时间 电压 - 电源 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 存储格式 技术 存储容量 存储组织 存储接口 时钟频率 写周期时间 - 字,页 访问时间 电压 - 电源 工作温度 等级 认证 安装类型 供应商设备封装
CY7C1381KV33-133AXI

CY7C1381KV33-133AXI

IC SRAM 18MBIT PARALLEL 100TQFP

Infineon Technologies

700 -
CY7C1381KV33-133AXI

数据表

- 100-LQFP Tray Active Not Verified Volatile SRAM SRAM - Synchronous, SDR 18Mbit 512K x 36 Parallel 133 MHz - 6.5 ns 3.135V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 100-TQFP (14x20)
CY7C1383KV33-133AXI

CY7C1383KV33-133AXI

IC SRAM 18MBIT PARALLEL 100TQFP

Infineon Technologies

102 -
CY7C1383KV33-133AXI

数据表

- 100-LQFP Tray Active Not Verified Volatile SRAM SRAM - Synchronous, SDR 18Mbit 1M x 18 Parallel 133 MHz - 6.5 ns 3.135V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 100-TQFP (14x20)
EMMC128-TY29-5B101

EMMC128-TY29-5B101

IC FLASH 1TBIT EMMC 153FBGA

Kingston

102 -
EMMC128-TY29-5B101

数据表

- 153-BGA Tray Active Not Verified Non-Volatile FLASH FLASH - NAND (TLC) 1Tbit 128G x 8 eMMC - - - - -25°C ~ 85°C - - Surface Mount 153-FBGA (11.5x13)
AS4C4G8D4-62BCN

AS4C4G8D4-62BCN

DDR4, 32GB, 4G X 8, 1.2V, 78-BAL

Alliance Memory, Inc.

210 -

-

- 78-TFBGA Tray Active - Volatile DRAM SDRAM - DDR4 32Gbit 4G x 8 Parallel 1.6 GHz - 13.75 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 78-FBGA (7.5x11)
AS4C2G16D4-62BCN

AS4C2G16D4-62BCN

DDR4, 32GB, 2G X 16, 1.2V, 96-BA

Alliance Memory, Inc.

170 -

-

- 96-TFBGA Tray Active - Volatile DRAM SDRAM - DDR4 32Gbit 2G x 16 Parallel 1.6 GHz - 13.75 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) - - Surface Mount 96-FBGA (7.5x13)
DS1230YP-100+

DS1230YP-100+

IC NVSRAM 256KBIT PAR 34PWRCAP

Analog Devices Inc./Maxim Integrated

0 -
DS1230YP-100+

数据表

- 34-PowerCap™ Module Tube Active Not Verified Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kbit 32K x 8 Parallel - 100ns 100 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) - - Surface Mount 34-PowerCap Module
71342LA25PFGI

71342LA25PFGI

IC SRAM 32KBIT PARALLEL 64TQFP

Renesas Electronics Corporation

258 -
71342LA25PFGI

数据表

- 64-TQFP Tray Active Not Verified Volatile SRAM SRAM - Dual Port, Asynchronous 32Kbit 4K x 8 Parallel - 25ns 25 ns 4.5V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 64-TQFP (14x14)
MT62F1G32D2DS-026 WT:B

MT62F1G32D2DS-026 WT:B

IC DRAM 32GBIT PAR 200WFBGA

Micron Technology Inc.

790 -

-

- 200-WFBGA Box Active Not Verified Volatile DRAM SDRAM - Mobile LPDDR5 32Gbit 1G x 32 Parallel - - - 1.05V - - - Surface Mount 200-WFBGA (10x14.5)
B3221XM3BDGVI-U

B3221XM3BDGVI-U

IC DRAM 32GBIT PAR 200FBGA

Kingston Technology

140 -
B3221XM3BDGVI-U

数据表

LPDDR4X 200-WFBGA Tray Active - Volatile DRAM SDRAM - Mobile LPDDR4X 32Gbit 2G x 16 Parallel 2.133 GHz 18ns 3.5 ns 1.06V ~ 1.17V, 1.7V ~ 1.95V -25°C ~ 85°C (TC) - - Surface Mount 200-FBGA (10x14.5)
B3221PM3BDGUI-U

B3221PM3BDGUI-U

IC DRAM 32GBIT PAR 200FBGA

Kingston Technology

121 -

-

LPDDR4 200-WFBGA Tray Active - Volatile DRAM SDRAM - Mobile LPDDR4 32Gbit 2G x 16 Parallel 1.866 GHz 18ns 3.5 ns 1.06V ~ 1.17V, 1.7V ~ 1.95V -25°C ~ 85°C (TC) - - Surface Mount 200-FBGA (10x14.5)
MR2A08AMYS35

MR2A08AMYS35

IC RAM 4MBIT PARALLEL 44TSOP2

Everspin Technologies Inc.

125 -
MR2A08AMYS35

数据表

- 44-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Non-Volatile RAM MRAM (Magnetoresistive RAM) 4Mbit 512K x 8 Parallel - 35ns 35 ns 3V ~ 3.6V -40°C ~ 125°C (TA) Automotive AEC-Q100 Surface Mount 44-TSOP2
7143LA20JG

7143LA20JG

IC SRAM 32KBIT PARALLEL 68PLCC

Renesas Electronics Corporation

232 -
7143LA20JG

数据表

- 68-LCC (J-Lead) Tube Active Not Verified Volatile SRAM SRAM - Dual Port, Asynchronous 32Kbit 2K x 16 Parallel - 20ns 20 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) - - Surface Mount 68-PLCC (24.21x24.21)
CY14B104NA-ZS45XI

CY14B104NA-ZS45XI

IC NVSRAM 4MBIT PAR 44TSOP II

Infineon Technologies

654 -
CY14B104NA-ZS45XI

数据表

- 44-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 4Mbit 256K x 16 Parallel - 45ns 45 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 44-TSOP II
7133LA20PFG

7133LA20PFG

IC SRAM 32KBIT PARALLEL 100TQFP

Renesas Electronics Corporation

260 -
7133LA20PFG

数据表

- 100-LQFP Tray Active Not Verified Volatile SRAM SRAM - Dual Port, Asynchronous 32Kbit 2K x 16 Parallel - 20ns 20 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) - - Surface Mount 100-TQFP (14x14)
MT53E1G32D2FW-046 AIT:C

MT53E1G32D2FW-046 AIT:C

IC DRAM 32GBIT PAR 200TFBGA

Micron Technology Inc.

1,320 -

-

- 200-TFBGA Tray Active - Volatile DRAM SDRAM - Mobile LPDDR4X 32Gbit 1G x 32 Parallel 2.133 GHz 18ns 3.5 ns 1.06V ~ 1.17V -40°C ~ 95°C (TC) Automotive AEC-Q100 Surface Mount 200-TFBGA (10x14.5)
CY15B108QN-50BKXQ

CY15B108QN-50BKXQ

IC FRAM 8MBIT SPI 24FBGA

Infineon Technologies

470 -
CY15B108QN-50BKXQ

数据表

Excelon™-Auto, F-RAM™ 24-TBGA Tray Active - Non-Volatile FRAM FRAM (Ferroelectric RAM) 8Mbit 1M x 8 SPI 50 MHz - 8 ns 1.8V ~ 3.6V -40°C ~ 105°C (TA) Automotive AEC-Q100 Surface Mount 24-FBGA (6x8)
DS1245AB-120IND+

DS1245AB-120IND+

IC NVSRAM 1MBIT PARALLEL 32EDIP

Analog Devices Inc./Maxim Integrated

0 -
DS1245AB-120IND+

数据表

- 32-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 1Mbit 128K x 8 Parallel - 120ns 120 ns 4.75V ~ 5.25V -40°C ~ 85°C (TA) - - Through Hole 32-EDIP
MT28FW02GBBA1HPC-0AAT TR

MT28FW02GBBA1HPC-0AAT TR

IC FLASH 2GBIT PARALLEL 64LBGA

Micron Technology Inc.

995 -
MT28FW02GBBA1HPC-0AAT TR

数据表

- 64-LBGA Tape & Reel (TR) Active Not Verified Non-Volatile FLASH FLASH - NOR 2Gbit 128M x 16 Parallel - 60ns 105 ns 1.7V ~ 3.6V -40°C ~ 105°C (TA) Automotive AEC-Q100 Surface Mount 64-LBGA (11x13)
CY7C1061GN30-10ZSXI

CY7C1061GN30-10ZSXI

IC SRAM 16MBIT PAR 54TSOP II

Infineon Technologies

579 -
CY7C1061GN30-10ZSXI

数据表

- 54-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Volatile SRAM SRAM - Asynchronous 16Mbit 1M x 16 Parallel - 10ns 10 ns 2.2V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 54-TSOP II
DS1245WP-100+

DS1245WP-100+

IC NVSRAM 1MBIT PAR 34PWRCAP

Analog Devices Inc./Maxim Integrated

0 -
DS1245WP-100+

数据表

- 34-PowerCap™ Module Tube Active Not Verified Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 1Mbit 128K x 8 Parallel - 100ns 100 ns 3V ~ 3.6V 0°C ~ 70°C (TA) - - Surface Mount 34-PowerCap Module
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