单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N1302

1N1302

DIODE GEN PURP 100V 37A DO5

Microchip Technology

4,464 -
1N1302

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 37A 1.19 V @ 90 A Standard Recovery >500ns, > 200mA (Io) 5 µs 10 µA @ 100 V - - - Stud Mount DO-5 (DO-203AB) -65°C ~ 200°C
1N1301

1N1301

DIODE GEN PURP 50V 37A DO5

Microchip Technology

6,594 -
1N1301

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 50 V 37A 1.19 V @ 90 A Standard Recovery >500ns, > 200mA (Io) 5 µs 10 µA @ 50 V - - - Stud Mount DO-5 (DO-203AB) -65°C ~ 200°C
UES1306SM/TR

UES1306SM/TR

DIODE GP 400V 5A SQ-MELF B

Microchip Technology

9,579 -

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 400 V 5A - Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 400 V - - - Surface Mount B, SQ-MELF -55°C ~ 175°C
VS-VSKE166/04PBF

VS-VSKE166/04PBF

DIODE GP 400V 165A INT-A-PAK

Vishay General Semiconductor - Diodes Division

2,115 -
VS-VSKE166/04PBF

数据表

- INT-A-PAK (3) Bulk Active Standard 400 V 165A - Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis Mount INT-A-PAK -
JANS1N5807US

JANS1N5807US

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

3,838 -

-

- SQ-MELF, B Bulk Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5826

1N5826

5A SCHOTTKY RECTIFIER

Microchip Technology

2,845 -
1N5826

数据表

- DO-203AA, DO-4, Stud Bulk Active Schottky 20 V 15A 670 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Stud Mount DO-4 (DO-203AA) -55°C ~ 150°C
1N5827

1N5827

5A SCHOTTKY RECTIFIER

Microchip Technology

8,710 -
1N5827

数据表

- DO-203AA, DO-4, Stud Bulk Active Schottky 30 V 15A 770 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 30 V - - - Stud Mount DO-4 (DO-203AA) -55°C ~ 150°C
1N5829

1N5829

DIODE SCHOTTKY 20V 25A DO203AA

Microchip Technology

9,019 -
1N5829

数据表

- DO-203AA, DO-4, Stud Bulk Active Schottky 20 V 25A 440 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 20 V 1650pF @ 5V, 1MHz - - Stud Mount DO-203AA (DO-4) -65°C ~ 125°C
1N5830

1N5830

DIODE SCHOTTKY 30V 25A DO203AA

Microchip Technology

8,963 -
1N5830

数据表

- DO-203AA, DO-4, Stud Bulk Active Schottky 30 V 25A 460 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 30 V 1650pF @ 5V, 1MHz - - Stud Mount DO-203AA (DO-4) -65°C ~ 125°C
1N5828R

1N5828R

DIODE SCHOTTKY REV 40V 15A DO4

Microchip Technology

7,759 -

-

- DO-203AA, DO-4, Stud Bulk Active Schottky, Reverse Polarity 40 V 15A 870 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V - - - Stud Mount DO-4 (DO-203AA) -55°C ~ 150°C
JAN1N4458

JAN1N4458

DIODE GEN PURP 800V 15A DO203AA

Microchip Technology

9,906 -
JAN1N4458

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard 800 V 15A 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 800 V - Military MIL-PRF-19500/162 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JAN1N4459

JAN1N4459

DIODE GEN PURP 1KV 15A DO203AA

Microchip Technology

8,254 -
JAN1N4459

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard 1000 V 15A 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1000 V - Military MIL-PRF-19500/162 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANS1N5809US/TR

JANS1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

9,551 -

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5807US/TR

JANS1N5807US/TR

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

4,993 -

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
VS-VSKE166/08PBF

VS-VSKE166/08PBF

DIODE GP 800V 165A INT-A-PAK

Vishay General Semiconductor - Diodes Division

2,314 -
VS-VSKE166/08PBF

数据表

- INT-A-PAK (3) Bulk Active Standard 800 V 165A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 800 V - - - Chassis Mount INT-A-PAK -40°C ~ 150°C
JANS1N5614US

JANS1N5614US

DIODE GEN PURP 200V 1A A SQ-MELF

Microchip Technology

2,591 -

-

- SQ-MELF, A Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/427 Surface Mount A, SQ-MELF -65°C ~ 200°C
JANS1N5809US

JANS1N5809US

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

4,012 -

-

- SQ-MELF, B Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N6080US

1N6080US

DIODE GEN PURP 100V 2A G-MELF

Microchip Technology

2,287 -
1N6080US

数据表

- SQ-MELF, G Bulk Discontinued at Digi-Key Standard 100 V 2A 1.5 V @ 37.7 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 100 V - - - Surface Mount G-MELF (D-5C) -65°C ~ 155°C
VS-SD400C08C

VS-SD400C08C

DIODE GEN PURP 800V 800A DO200AA

Vishay General Semiconductor - Diodes Division

5,402 -
VS-SD400C08C

数据表

- DO-200AA, A-PUK Bulk Last Time Buy Standard 800 V 800A 1.86 V @ 1930 A Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 800 V - - - Clamp On DO-200AA, A-PUK -
1N5828

1N5828

DIODE SCHOTTKY 40V 15A DO203AA

Microchip Technology

2,150 -

-

- DO-203AA, DO-4, Stud Bulk Active Schottky 40 V 15A 870 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 20 V - - - Stud Mount DO-203AA (DO-4) -55°C ~ 150°C
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