单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
R6021035ESYA

R6021035ESYA

DIODE GP 1KV 350A DO205AB DO9

Powerex Inc.

6,550 -
R6021035ESYA

数据表

- DO-205AB, DO-9, Stud Bulk Discontinued at Digi-Key Standard 1000 V 350A 1.5 V @ 800 A Standard Recovery >500ns, > 200mA (Io) 2 µs 50 mA @ 1000 V - - - Chassis, Stud Mount DO-205AB (DO-9) -45°C ~ 150°C
1N6095

1N6095

DIODE SCHOTTKY 30V 25A DO203AA

Microchip Technology

2,507 -

-

- DO-203AA, DO-4, Stud Bulk Active Schottky 30 V 25A 600 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
JANS1N3595US/TR

JANS1N3595US/TR

DIODE GEN PURP 200MA B SQ-MELF

Microchip Technology

6,887 -

-

- SQ-MELF, B Tape & Reel (TR) Active Standard - 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-S-19500-241 Surface Mount B, SQ-MELF -65°C ~ 150°C
A170PD

A170PD

DIODE GP 1.4KV 100A DO205AA

Powerex Inc.

8,915 -
A170PD

数据表

- DO-205AA, DO-8, Stud Bulk Discontinued at Digi-Key Standard 1400 V 100A 1.3 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1400 V - - - Chassis, Stud Mount DO-205AA (DO-8) -40°C ~ 200°C
A170RPD

A170RPD

DIODE GP REV 1.4KV 100A DO205AA

Powerex Inc.

5,912 -
A170RPD

数据表

- DO-205AA, DO-8, Stud Bulk Discontinued at Digi-Key Standard, Reverse Polarity 1400 V 100A 1.3 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1400 V - - - Chassis, Stud Mount DO-205AA (DO-8) -40°C ~ 200°C
JAN1N3768

JAN1N3768

DIODE GEN PURP 1KV 35A DO5

Microchip Technology

8,815 -
JAN1N3768

数据表

- DO-203AB, DO-5, Stud Bulk Discontinued at Digi-Key Standard 1000 V 35A 1.4 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V - Military MIL-PRF-19500/297 Chassis, Stud Mount DO-5 -65°C ~ 175°C
1N4596

1N4596

DIODE GP 1.4KV 150A DO205AA

Powerex Inc.

8,339 -
1N4596

数据表

- DO-205AA, DO-8, Stud Bulk Discontinued at Digi-Key Standard 1400 V 150A - Standard Recovery >500ns, > 200mA (Io) - 3.5 mA @ 1400 V - - - Chassis, Stud Mount DO-205AA (DO-8) -60°C ~ 200°C
1N4596R

1N4596R

DIODE GP REV 1.4KV 150A DO205AA

Powerex Inc.

5,253 -
1N4596R

数据表

- DO-205AA, DO-8, Stud Bulk Discontinued at Digi-Key Standard, Reverse Polarity 1400 V 150A - Standard Recovery >500ns, > 200mA (Io) - 3.5 mA @ 1400 V - - - Chassis, Stud Mount DO-205AA (DO-8) -60°C ~ 200°C
1N4594

1N4594

DIODE GEN PURP 1KV 150A DO205AA

Powerex Inc.

7,246 -
1N4594

数据表

- DO-205AA, DO-8, Stud Bulk Discontinued at Digi-Key Standard 1000 V 150A - Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1000 V - - - Chassis, Stud Mount DO-205AA (DO-8) -60°C ~ 200°C
1N4594R

1N4594R

DIODE GP REV 1KV 150A DO205AA

Powerex Inc.

2,472 -
1N4594R

数据表

- DO-205AA, DO-8, Stud Bulk Discontinued at Digi-Key Standard, Reverse Polarity 1000 V 150A - Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1000 V - - - Chassis, Stud Mount DO-205AA (DO-8) -60°C ~ 200°C
UFT3150C

UFT3150C

DIODE GEN PURP 500V 30A TO204AD

Microchip Technology

4,623 -
UFT3150C

数据表

- TO-204AA, TO-3 Bulk Active Standard 500 V 30A 1.1 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 15 µA @ 500 V 115pF @ 10V, 1MHz - - Through Hole TO-204AA (TO-3) -65°C ~ 175°C
UES705R

UES705R

RECTIFIER

Microchip Technology

5,700 -

-

* - Bulk Active - - - - - - - - - - - - -
JAN1N1202AR

JAN1N1202AR

DIODE GP REV 200V 12A DO203AA

Microchip Technology

4,630 -
JAN1N1202AR

数据表

- DO-203AA, DO-4, Stud Bulk Discontinued at Digi-Key Standard, Reverse Polarity 200 V 12A 1.35 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V - Military MIL-PRF-19500/260 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
JAN1N1204AR

JAN1N1204AR

DIODE GP REV 400V 12A DO203AA

Microchip Technology

4,050 -
JAN1N1204AR

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 12A 1.35 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - Military MIL-PRF-19500/260 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
JAN1N1206AR

JAN1N1206AR

DIODE GP REV 600V 12A DO203AA

Microchip Technology

4,359 -
JAN1N1206AR

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 12A 1.35 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - Military MIL-PRF-19500/260 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
MBRH200100

MBRH200100

DIODE SCHOTTKY 100V 200A D-67

GeneSiC Semiconductor

7,648 -
MBRH200100

数据表

- D-67 Bulk Active Schottky 100 V 200A 840 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount D-67 -
MBRH200100R

MBRH200100R

DIODE SCHOTTKY 100V 200A D-67

GeneSiC Semiconductor

7,165 -
MBRH200100R

数据表

- D-67 Bulk Active Schottky, Reverse Polarity 100 V 200A 840 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount D-67 -
MBRH20020

MBRH20020

DIODE SCHOTTKY 20V 200A D-67

GeneSiC Semiconductor

2,879 -
MBRH20020

数据表

- D-67 Bulk Active Schottky 20 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount D-67 -
MBRH20020R

MBRH20020R

DIODE SCHOTTKY REV 20V 200A D-67

GeneSiC Semiconductor

6,900 -
MBRH20020R

数据表

- D-67 Bulk Active Schottky, Reverse Polarity 20 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount D-67 -
MBRH20030

MBRH20030

DIODE SCHOTTKY 30V 200A D-67

GeneSiC Semiconductor

7,862 -
MBRH20030

数据表

- D-67 Bulk Active Schottky 30 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount D-67 -
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