单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4593R

1N4593R

DIODE GP REV 800V 150A DO205AA

Microchip Technology

2,602 -
1N4593R

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard, Reverse Polarity 800 V 150A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 800 V - - - Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
S4290

S4290

STD RECTIFIER

Microchip Technology

9,709 -

-

* - Bulk Active - - - - - - - - - - - - -
1N4588

1N4588

DIODE GEN PURP 200V 150A DO205AA

Microchip Technology

6,739 -
1N4588

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard 200 V 150A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 200 V - - - Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
VS-SD2000C04L

VS-SD2000C04L

DIODE GP 400V 2100A DO200AB

Vishay General Semiconductor - Diodes Division

2,568 -
VS-SD2000C04L

数据表

- DO-200AB, B-PUK Bulk Last Time Buy Standard 400 V 2100A 1.55 V @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 60 mA @ 400 V - - - Clamp On DO-200AB, B-PUK -
VS-SD2000C08L

VS-SD2000C08L

DIODE GP 800V 2100A DO200AB

Vishay General Semiconductor - Diodes Division

6,623 -
VS-SD2000C08L

数据表

- DO-200AB, B-PUK Bulk Last Time Buy Standard 800 V 2100A 1.55 V @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 60 mA @ 800 V - - - Clamp On DO-200AB, B-PUK -
JANS1N5552US

JANS1N5552US

DIODE GEN PURP 600V 3A B SQ-MELF

Microchip Technology

7,413 -

-

- SQ-MELF, B Bulk Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 150 V - Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5553US

JANS1N5553US

DIODE GEN PURP 800V 3A B SQ-MELF

Microchip Technology

7,195 -

-

- SQ-MELF, B Bulk Active Standard 800 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 150 V - Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
R7000205XXUA

R7000205XXUA

DIODE GEN PURP 200V 550A DO200AA

Powerex Inc.

3,735 -
R7000205XXUA

数据表

- DO-200AA, A-PUK Bulk Discontinued at Digi-Key Standard 200 V 550A 1.2 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) 15 µs 50 mA @ 200 V - - - Chassis, Stud Mount DO-200AA, R62 -65°C ~ 150°C
JANS1N5552US/TR

JANS1N5552US/TR

DIODE GEN PURP 600V 3A B SQ-MELF

Microchip Technology

3,094 -

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 150 V - Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5550US/TR

JANS1N5550US/TR

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

2,265 -

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5553US/TR

JANS1N5553US/TR

STD RECTIFIER

Microchip Technology

8,045 -
JANS1N5553US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 800 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
VS-SD2000C10L

VS-SD2000C10L

DIODE GEN PURP 1KV 2100A DO200AB

Vishay General Semiconductor - Diodes Division

7,428 -
VS-SD2000C10L

数据表

- DO-200AB, B-PUK Bulk Last Time Buy Standard 1000 V 2100A 1.55 V @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 60 mA @ 1000 V - - - Clamp On DO-200AB, B-PUK -
UFR3260R

UFR3260R

DIODE GP REV 600V 30A DO203AA

Microchip Technology

3,007 -
UFR3260R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 30A 1.35 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 600 V 100pF @ 10V, 1MHz - - Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-SD1100C25L

VS-SD1100C25L

DIODE GEN PURP 2.5KV 910A B-43

Vishay General Semiconductor - Diodes Division

6,752 -
VS-SD1100C25L

数据表

- DO-200AA, A-PUK Bulk Last Time Buy Standard 2500 V 910A 1.44 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 2500 V - - - Clamp On B-43, Hockey PUK -
R43160

R43160

DIODE GP 1.6KV 150A DO205AA

Microchip Technology

6,739 -

-

- DO-205AA, DO-8, Stud Bulk Active Standard, Reverse Polarity 1600 V 150A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - - - Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
1N4590

1N4590

DIODE GEN PURP 400V 150A DO205AA

Microchip Technology

3,437 -
1N4590

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard 400 V 150A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 400 V - - - Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
1N3294AR

1N3294AR

DIODE GEN PURP 800V 100A DO205AA

Microchip Technology

2,972 -
1N3294AR

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard, Reverse Polarity 800 V 100A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 13 mA @ 800 V - - - Chassis, Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
JANS1N5550US

JANS1N5550US

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

2,549 -

-

- SQ-MELF, B Bulk Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
ND89N12KXPSA1

ND89N12KXPSA1

THYR / DIODE MODULE DK

Infineon Technologies

9,830 -

-

- Module Tray Active Standard 1200 V 89A 1.5 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V - - - Chassis Mount - 150°C
JAN1N1186R

JAN1N1186R

DIODE GEN PURP REV 200V 35A DO5

Microchip Technology

7,501 -
JAN1N1186R

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 200 V 35A 1.4 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V - Military MIL-PRF-19500/297 Chassis, Stud Mount DO-5 -65°C ~ 175°C
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