单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4933RL

1N4933RL

DIODE GEN PURP 50V 1A AXIAL

onsemi

6,461 -
1N4933RL

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 50 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 50 V - - - Through Hole Axial -65°C ~ 150°C
1N4007RL

1N4007RL

DIODE GEN PURP 1KV 1A AXIAL

onsemi

5,190 -
1N4007RL

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 1000 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V - - - Through Hole Axial -65°C ~ 175°C
1N4004RL

1N4004RL

DIODE GEN PURP 400V 1A AXIAL

onsemi

4,569 -
1N4004RL

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - - - Through Hole Axial -65°C ~ 175°C
1N5821RL

1N5821RL

DIODE SCHOTTKY 30V 3A AXIAL

onsemi

5,276 -
1N5821RL

数据表

- DO-201AA, DO-27, Axial Tape & Reel (TR) Obsolete Schottky 30 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 30 V - - - Through Hole Axial -65°C ~ 125°C
1N4003RL

1N4003RL

DIODE GEN PURP 200V 1A AXIAL

onsemi

2,672 -
1N4003RL

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V - - - Through Hole Axial -65°C ~ 175°C
1N5822RL

1N5822RL

DIODE SCHOTTKY 40V 3A AXIAL

onsemi

3,535 -
1N5822RL

数据表

- DO-201AA, DO-27, Axial Tape & Reel (TR) Obsolete Schottky 40 V 3A 525 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V - - - Through Hole Axial -65°C ~ 125°C
1N4937RL

1N4937RL

DIODE GEN PURP 600V 1A AXIAL

onsemi

7,659 -
1N4937RL

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 600 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 600 V - - - Through Hole Axial -65°C ~ 150°C
SDT04S60

SDT04S60

DIODE SIL CARB 600V 4A TO220-2-2

Infineon Technologies

9,688 -
SDT04S60

数据表

CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 4A 1.9 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 150pF @ 0V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
SDT10S30

SDT10S30

DIODE SIL CARB 300V 10A TO220-2

Infineon Technologies

7,464 -
SDT10S30

数据表

CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 300 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 300 V 600pF @ 0V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
FCSP140ETR

FCSP140ETR

DIODE SCHOTTKY 40V 1A FLIPKY

Vishay General Semiconductor - Diodes Division

6,257 -
FCSP140ETR

数据表

- Flipky™ Tape & Reel (TR) Obsolete Schottky 40 V 1A 480 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 40 V - - - Surface Mount Flipky™ -55°C ~ 150°C
STTA2006PI

STTA2006PI

DIODE GEN PURP 600V 20A DOP3I

STMicroelectronics

6,895 -

-

TURBOSWITCH™ DOP3I-2 Insulated (Straight Leads) Bulk Obsolete Standard 600 V 20A 1.75 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 100 µA @ 600 V - - - Through Hole DOP3I 150°C (Max)
STTA806DI

STTA806DI

DIODE GP 600V 8A TO220AC INS

STMicroelectronics

5,705 -
STTA806DI

数据表

TURBOSWITCH™ TO-220-2 Insulated, TO-220AC Bulk Obsolete Standard 600 V 8A 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 52 ns 100 µA @ 600 V - - - Through Hole TO-220AC ins 150°C (Max)
BYT30PI-1000

BYT30PI-1000

DIODE GEN PURP 1KV 30A DOP3I

STMicroelectronics

5,838 -
BYT30PI-1000

数据表

- DOP3I-2 Insulated (Straight Leads) Bulk Obsolete Standard 1000 V 30A 1.9 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 165 ns 100 µA @ 1000 V - - - Through Hole DOP3I -40°C ~ 150°C
BYT12PI-1000

BYT12PI-1000

DIODE GP 1KV 12A TO220AC ISOL

STMicroelectronics

2,078 -
BYT12PI-1000

数据表

- TO-220-2 Isolated Tab Bulk Obsolete Standard 1000 V 12A 1.9 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 155 ns 50 µA @ 1000 V - - - Through Hole TO220AC Isolated -40°C ~ 150°C
STTA106U

STTA106U

DIODE GEN PURP 600V 1A SMB

STMicroelectronics

6,875 -
STTA106U

数据表

TURBOSWITCH™ DO-214AA, SMB Tape & Reel (TR) Obsolete Standard 600 V 1A 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - - - Surface Mount SMB 125°C (Max)
1N4948GP/54

1N4948GP/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,140 -
1N4948GP/54

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 1000 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 1 µA @ 1000 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYG21M/54

BYG21M/54

DIODE AVALANCHE 1KV 1.5A DO214AC

Vishay General Semiconductor - Diodes Division

4,079 -
BYG21M/54

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Avalanche 1000 V 1.5A 1.6 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 1 µA @ 1000 V - - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
BYM07-200/32

BYM07-200/32

DIODE GP 200V 500MA DO213AA

Vishay General Semiconductor - Diodes Division

3,973 -
BYM07-200/32

数据表

SUPERECTIFIER® DO-213AA (Glass) Tape & Reel (TR) Active Standard 200 V 500mA 1.25 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 7pF @ 4V, 1MHz - - Surface Mount DO-213AA (GL34) -65°C ~ 175°C
BYM10-1000/1

BYM10-1000/1

DIODE GEN PURP 1KV 1A DO213AB

Vishay General Semiconductor - Diodes Division

5,628 -
BYM10-1000/1

数据表

SUPERECTIFIER® DO-213AB, MELF (Glass) Tape & Reel (TR) Active Avalanche 1000 V 1A 1.2 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 8pF @ 4V, 1MHz - - Surface Mount DO-213AB -65°C ~ 175°C
EGL41B/1

EGL41B/1

DIODE GEN PURP 100V 1A DO213AB

Vishay General Semiconductor - Diodes Division

6,221 -
EGL41B/1

数据表

SUPERECTIFIER® DO-213AB, MELF (Glass) Tape & Reel (TR) Active Standard 100 V 1A 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 100 V 20pF @ 4V, 1MHz - - Surface Mount DO-213AB -65°C ~ 175°C
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