单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BYD13MGPHE3/73

BYD13MGPHE3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,333 -
BYD13MGPHE3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 1000 V 1A - Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 7pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYD33DGPHE3/73

BYD33DGPHE3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,827 -
BYD33DGPHE3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 200 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYD33JGPHE3/73

BYD33JGPHE3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,135 -
BYD33JGPHE3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 600 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns - 15pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYD33MGPHE3/73

BYD33MGPHE3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,194 -
BYD33MGPHE3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 1000 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 1000 V - Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYV26DGPHE3/73

BYV26DGPHE3/73

DIODE GEN PURP 800V 1A DO204AC

Vishay General Semiconductor - Diodes Division

2,567 -
BYV26DGPHE3/73

数据表

SUPERECTIFIER® DO-204AC, DO-15, Axial Tape & Box (TB) Obsolete Standard 800 V 1A 2.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V 15pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -65°C ~ 175°C
BYV26EGPHE3/73

BYV26EGPHE3/73

DIODE GEN PURP 1KV 1A DO204AC

Vishay General Semiconductor - Diodes Division

4,251 -
BYV26EGPHE3/73

数据表

SUPERECTIFIER® DO-204AC, DO-15, Axial Tape & Box (TB) Obsolete Standard 1000 V 1A 2.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V 15pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -65°C ~ 175°C
BYW27-200GP-E3/73

BYW27-200GP-E3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,558 -
BYW27-200GP-E3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 200 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 200 nA @ 200 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYW27-200GPHE3/73

BYW27-200GPHE3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,036 -
BYW27-200GPHE3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 200 nA @ 200 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYW27-400GPHE3/73

BYW27-400GPHE3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,506 -
BYW27-400GPHE3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 200 nA @ 400 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYX10GP-E3/73

BYX10GP-E3/73

DIODE GP 1.6KV 360MA DO204AL

Vishay General Semiconductor - Diodes Division

9,425 -
BYX10GP-E3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 1600 V 360mA 1.6 V @ 2 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1600 V - - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
BYX10GPHE3/73

BYX10GPHE3/73

DIODE GP 1.6KV 360MA DO204AL

Vishay General Semiconductor - Diodes Division

5,605 -
BYX10GPHE3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1600 V 360mA 1.6 V @ 2 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1600 V - - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
DGP15HE3/73

DGP15HE3/73

DIODE GP 1.5KV 1.5A DO204AC

Vishay General Semiconductor - Diodes Division

5,751 -
DGP15HE3/73

数据表

SUPERECTIFIER® DO-204AC, DO-15, Axial Tape & Box (TB) Obsolete Standard 1500 V 1.5A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 20 µs 5 µA @ 1500 V - - - Through Hole DO-204AC (DO-15) -65°C ~ 175°C
EGP10AHE3/73

EGP10AHE3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,942 -
EGP10AHE3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 50 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 50 V 22pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
EGP10BHE3/73

EGP10BHE3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,457 -
EGP10BHE3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 100 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 100 V 22pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
EGP10C-E3/73

EGP10C-E3/73

DIODE GEN PURP 150V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,458 -
EGP10C-E3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 150 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 150 V 22pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
EGP10CHE3/73

EGP10CHE3/73

DIODE GEN PURP 150V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,918 -
EGP10CHE3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 150 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 150 V 22pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
EGP10D-E3/73

EGP10D-E3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,220 -
EGP10D-E3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 22pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
EGP10DHE3/73

EGP10DHE3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,343 -
EGP10DHE3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 22pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
EGP10FHE3/73

EGP10FHE3/73

DIODE GEN PURP 300V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,058 -
EGP10FHE3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 300 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 300 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
EGP10GHE3/73

EGP10GHE3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,260 -
EGP10GHE3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
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