单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
APT100DL60BG

APT100DL60BG

DIODE GEN PURP 600V 100A TO247

Microchip Technology

5,848 -
APT100DL60BG

数据表

- TO-247-2 Tube Active Standard 600 V 100A 1.6 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - - - - - Through Hole TO-247 -55°C ~ 175°C
JANTXV1N6629US

JANTXV1N6629US

DIODE GEN PURP 800V 1.4A D-5B

Microsemi Corporation

3,276 -
JANTXV1N6629US

数据表

- SQ-MELF, E Bulk Active Standard 800 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 800 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
DNA30E2200PC

DNA30E2200PC

DIODE GEN PURP 2.2KV 30A TO263AA

IXYS

4,835 -

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
DNA30EM2200PC

DNA30EM2200PC

DIODE GEN PURP 2.2KV 30A TO263AA

IXYS

4,350 -
DNA30EM2200PC

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
TRS6E65C,S1AQ

TRS6E65C,S1AQ

DIODE SIL CARB 650V 6A TO220-2L

Toshiba Semiconductor and Storage

5,245 -

-

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 35pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS12E65C,S1Q

TRS12E65C,S1Q

DIODE SIL CARB 650V 12A TO220-2L

Toshiba Semiconductor and Storage

3,177 -

-

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 170 V 65pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
JANTX1N6629US

JANTX1N6629US

DIODE GEN PURP 880V 1.4A D-5B

Microsemi Corporation

6,147 -
JANTX1N6629US

数据表

- SQ-MELF, E Bulk Active Standard 880 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 880 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
MSG105

MSG105

DIODE SCHOTTKY 50V 1A DO204AL

Microsemi Corporation

3,206 -
MSG105

数据表

- DO-204AL, DO-41, Axial Bulk Active Schottky 50 V 1A 690 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 50 V - - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
MSG109

MSG109

DIODE SCHOTTKY 90V 1A DO204AL

Microsemi Corporation

3,590 -
MSG109

数据表

- DO-204AL, DO-41, Axial Bulk Active Schottky 90 V 1A 810 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 90 V - - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
DB3Y501KEL

DB3Y501KEL

DIODE SCHOTTKY 50V 200MA SOT23-3

Panasonic Electronic Components

6,334 -
DB3Y501KEL

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 50 V 200mA 550 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed 1.6 ns 200 µA @ 50 V 4pF @ 10V, 1MHz - - Surface Mount SOT-23-3 125°C (Max)
BAS16

BAS16

DIODE GEN PURP 80V 200MA SC59-3

Panasonic Electronic Components

2,899 -
BAS16

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 80 V 200mA 1.25 V @ 150 mA Small Signal =< 200mA (Io), Any Speed 3 ns 100 nA @ 80 V 1.2pF @ 0V, 1MHz - - Surface Mount SC-59-3 150°C (Max)
DB2U31600L

DB2U31600L

DIODE SCHOTTKY 30V 100MA SOD923

Panasonic Electronic Components

9,495 -
DB2U31600L

数据表

- SOD-923 Tape & Reel (TR) Obsolete Schottky 30 V 100mA 550 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 800 ps 15 µA @ 30 V 2pF @ 10V, 1MHz - - Surface Mount SOD-923 125°C (Max)
1N4534

1N4534

DIODE GEN PURP 50V 150MA DO34

Microsemi Corporation

4,779 -
1N4534

数据表

- DO-204AG, DO-34, Axial Bulk Active Standard 50 V 150mA 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns 50 nA @ 50 V - - - Through Hole DO-34 -65°C ~ 175°C
DSB1A20

DSB1A20

DIODE SCHOTTKY 20V 1A DO204AL

Microchip Technology

9,411 -
DSB1A20

数据表

- DO-204AL, DO-41, Axial Bulk Active Schottky 20 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - - - Through Hole DO-204AL (DO-41) -
DSB1A30

DSB1A30

DIODE SCHOTTKY 30V 1A DO204AL

Microchip Technology

6,717 -
DSB1A30

数据表

- DO-204AL, DO-41, Axial Bulk Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - - - Through Hole DO-204AL (DO-41) -
DSB1A50

DSB1A50

DIODE SCHOTTKY 50V 1A DO204AL

Microchip Technology

3,352 -
DSB1A50

数据表

- DO-204AL, DO-41, Axial Bulk Active Schottky 50 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 50 V - - - Through Hole DO-204AL (DO-41) -
DSB2810

DSB2810

DIODE SCHOTTKY 20V 75MA DO35

Microchip Technology

2,609 -
DSB2810

数据表

- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 75mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 100 nA @ 15 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
DSB3A20

DSB3A20

DIODE SCHOTTKY 20V 3A DO204AH

Microchip Technology

8,989 -
DSB3A20

数据表

- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 3A 500 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 125°C
DSB5817

DSB5817

DIODE SCHOTTKY DO-41

Microchip Technology

3,121 -

-

* - Bulk Active - - - - - - - - - - - - -
DSB5818

DSB5818

DIODE SCHOTTKY 30V 1A DO204AL

Microchip Technology

2,637 -

-

- DO-204AL, DO-41, Axial Bulk Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 nA @ 30 V - - - Through Hole DO-204AL (DO-41) -
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