单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
GP30DL-E3/72

GP30DL-E3/72

DIODE GEN PURP 200V 3A DO201AD

Vishay General Semiconductor - Diodes Division

6,121 -

-

- DO-201AD, Axial Bulk Obsolete Standard 200 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 5 µA @ 200 V 40pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 175°C
1N3611GP-M3/73

1N3611GP-M3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,029 -
1N3611GP-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4001GPEHE3/91

1N4001GPEHE3/91

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,782 -
1N4001GPEHE3/91

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 50 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 50 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4001GP-M3/73

1N4001GP-M3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,823 -
1N4001GP-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 50 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4002GPE-E3/91

1N4002GPE-E3/91

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,770 -
1N4002GPE-E3/91

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 100 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 100 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4002GPEHE3/91

1N4002GPEHE3/91

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,382 -
1N4002GPEHE3/91

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 100 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 100 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4002GP-M3/73

1N4002GP-M3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,602 -
1N4002GP-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 100 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4003GPEHE3/53

1N4003GPEHE3/53

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,865 -
1N4003GPEHE3/53

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 200 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4003GP-M3/73

1N4003GP-M3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,520 -
1N4003GP-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4004GPE-E3/91

1N4004GPE-E3/91

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,003 -
1N4004GPE-E3/91

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Cut Tape (CT) Obsolete Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 400 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4004GPE-E3/93

1N4004GPE-E3/93

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,455 -
1N4004GPE-E3/93

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 400 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4004GPEHE3/91

1N4004GPEHE3/91

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,269 -
1N4004GPEHE3/91

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 400 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4004GPEHE3/93

1N4004GPEHE3/93

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,978 -
1N4004GPEHE3/93

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 400 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4004GPE-M3/73

1N4004GPE-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,084 -
1N4004GPE-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 400 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4004GPHM3/73

1N4004GPHM3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,488 -
1N4004GPHM3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 400 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4004GP-M3/73

1N4004GP-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,188 -
1N4004GP-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4005-E3/53

1N4005-E3/53

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,475 -
1N4005-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4005E-E3/53

1N4005E-E3/53

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,812 -
1N4005E-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 600 V 1A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4005GPEHE3/53

1N4005GPEHE3/53

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,634 -
1N4005GPEHE3/53

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 600 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4005GPHM3/73

1N4005GPHM3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,736 -
1N4005GPHM3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
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