单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N645-1

JANTX1N645-1

DIODE GEN PURP 225V 400MA DO35

Microchip Technology

5,142 -
JANTX1N645-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 225 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - Military MIL-PRF-19500/240 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N645UR-1

JANTX1N645UR-1

DIODE GP 225V 400MA DO213AA

Microchip Technology

9,109 -
JANTX1N645UR-1

数据表

- DO-213AA Bulk Active Standard 225 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - Military MIL-PRF-19500/240 Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N647-1

JANTX1N647-1

DIODE GEN PURP 400V 400MA DO35

Microchip Technology

4,120 -
JANTX1N647-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 400 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - Military MIL-PRF-19500/240 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTXV1N647-1

JANTXV1N647-1

DIODE GEN PURP 400V 400MA DO35

Microchip Technology

7,273 -
JANTXV1N647-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 400 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - Military MIL-PRF-19500/240 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N649-1

JAN1N649-1

DIODE GEN PURP 600V 400MA DO35

Microchip Technology

6,007 -
JAN1N649-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 600 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 600 V - Military MIL-PRF-19500/240 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTXV1N649-1

JANTXV1N649-1

DIODE GEN PURP 600V 400MA DO35

Microchip Technology

6,214 -
JANTXV1N649-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 600 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 600 V - Military MIL-PRF-19500/240 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N649UR-1

JANTX1N649UR-1

DIODE GP 600V 400MA DO213AA

Microchip Technology

3,051 -
JANTX1N649UR-1

数据表

- DO-213AA Bulk Active Standard 600 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 600 V - Military MIL-PRF-19500/240 Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N6510

JANTX1N6510

DIODE GP 75V 300MA 16FLATPACK

Microchip Technology

2,612 -

-

- 16-CFlatPack Bulk Active Standard 75 V 300mA 1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 10 ns - - Military MIL-PRF-19500/478 Surface Mount 16-Flatpack -
JANS1N6661

JANS1N6661

DIODE GEN PURP 225V 500MA DO35

Microchip Technology

9,910 -
JANS1N6661

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 225 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - Military MIL-PRF-19500/587 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N6661

JANTX1N6661

DIODE GEN PURP 225V 500MA DO35

Microchip Technology

7,714 -
JANTX1N6661

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 225 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - Military MIL-PRF-19500/587 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N6661US

JANTX1N6661US

DIODE GEN PURP 225V 500MA D-5A

Microchip Technology

6,840 -
JANTX1N6661US

数据表

- SQ-MELF, A Bulk Active Standard 225 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - Military MIL-PRF-19500/587 Surface Mount D-5A -65°C ~ 175°C
JANTXV1N6661US

JANTXV1N6661US

DIODE GEN PURP 225V 500MA D-5A

Microchip Technology

9,060 -
JANTXV1N6661US

数据表

- SQ-MELF, A Bulk Active Standard 225 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - Military MIL-PRF-19500/587 Surface Mount D-5A -65°C ~ 175°C
JANTX1N6662

JANTX1N6662

DIODE GEN PURP 400V 500MA DO35

Microchip Technology

6,781 -
JANTX1N6662

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 400 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - Military MIL-PRF-19500/587 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANS1N6662US

JANS1N6662US

DIODE GEN PURP 400V 500MA D-5A

Microchip Technology

4,726 -
JANS1N6662US

数据表

- SQ-MELF, A Bulk Active Standard 400 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - Military MIL-PRF-19500/587 Surface Mount D-5A -65°C ~ 175°C
JAN1N6677UR-1

JAN1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

9,289 -
JAN1N6677UR-1

数据表

- DO-213AA Bulk Active Schottky 40 V 200mA 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 50 µA @ 40 V 50pF @ 0V, 1MHz Military MIL-PRF-19500/610 Surface Mount DO-213AA -65°C ~ 175°C
JANS1N6677UR-1

JANS1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

6,264 -
JANS1N6677UR-1

数据表

- DO-213AA Bulk Active Schottky 40 V 200mA 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V - Military MIL-PRF-19500/610 Surface Mount DO-213AA -65°C ~ 125°C
JANTX1N6677UR-1

JANTX1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

9,454 -
JANTX1N6677UR-1

数据表

- DO-213AA Bulk Active Schottky 40 V 200mA 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V - Military MIL-PRF-19500/610 Surface Mount DO-213AA -65°C ~ 125°C
JAN1N6761UR-1

JAN1N6761UR-1

DIODE SCHOTTKY 100V 1A DO213AB

Microchip Technology

2,477 -
JAN1N6761UR-1

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 100 V 1A 380 mV @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 70pF @ 5V, 1MHz Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 150°C
JANS1N6761UR-1

JANS1N6761UR-1

DIODE SCHOTTKY 100V 1A DO213AB

Microchip Technology

6,026 -
JANS1N6761UR-1

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 100 V 1A 380 mV @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 70pF @ 5V, 1MHz Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 150°C
JANTX1N6761UR-1

JANTX1N6761UR-1

DIODE SCHOTTKY 100V 1A DO213AB

Microchip Technology

4,701 -
JANTX1N6761UR-1

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 100 V 1A 380 mV @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
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