单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-15EVL06-M3/I

VS-15EVL06-M3/I

DIODE GEN PURP 600V 15A SLIMDPAK

Vishay General Semiconductor - Diodes Division

5,122 -
VS-15EVL06-M3/I

数据表

eSMP® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 15A 1.35 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - - - Surface Mount SlimDPAK -55°C ~ 175°C
STTH812D

STTH812D

DIODE GEN PURP 1.2KV 8A TO220AC

STMicroelectronics

3,816 -
STTH812D

数据表

- TO-220-2 Tube Active Standard 1200 V 8A 2.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 8 µA @ 1200 V - - - Through Hole TO-220AC 175°C (Max)
SBRT20U60SP5-13

SBRT20U60SP5-13

DIODE SBR 60V 20A POWERDI5

Diodes Incorporated

3,598 -
SBRT20U60SP5-13

数据表

- PowerDI™ 5 Tape & Reel (TR) Active Super Barrier 60 V 20A 530 mV @ 20 A Standard Recovery >500ns, > 200mA (Io) - 400 µA @ 60 V - Automotive AEC-Q101 Surface Mount PowerDI™ 5 -55°C ~ 150°C
VS-MURB820TRL-M3

VS-MURB820TRL-M3

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division

8,608 -
VS-MURB820TRL-M3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 8A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V - - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
VS-19TQ015S-M3

VS-19TQ015S-M3

DIODE SCHOTTKY 15V 19A TO263AB

Vishay General Semiconductor - Diodes Division

5,651 -
VS-19TQ015S-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 15 V 19A 360 mV @ 19 A Fast Recovery =< 500ns, > 200mA (Io) - 10.5 mA @ 15 V 2000pF @ 5V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 125°C
VF30100S-E3/4W

VF30100S-E3/4W

DIODE SCHOTTKY 100V 30A ITO220AB

Vishay General Semiconductor - Diodes Division

745 -
VF30100S-E3/4W

数据表

TMBS® TO-220-3 Full Pack, Isolated Tab Tube Active Schottky 100 V 30A 910 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V - - - Through Hole ITO-220AB -40°C ~ 150°C
APT30DQ60BG

APT30DQ60BG

DIODE GP 600V 30A TO247

Microchip Technology

439 -
APT30DQ60BG

数据表

- TO-247-2 Tube Active Standard 600 V 30A 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 25 µA @ 600 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
V20PWL63-M3/I

V20PWL63-M3/I

DIODE SCHOTTKY 60V 20A SLIMDPAK

Vishay General Semiconductor - Diodes Division

8,967 -
V20PWL63-M3/I

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 60 V 20A 620 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V 3.2pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SlimDPAK -40°C ~ 150°C
CMPD6263 TR PBFREE

CMPD6263 TR PBFREE

DIODE SCHOTTKY 70V 15MA SOT23

Central Semiconductor Corp

8,435 -
CMPD6263 TR PBFREE

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Schottky 70 V 15mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Surface Mount SOT-23 -65°C ~ 150°C
MBR10100-M3/4W

MBR10100-M3/4W

DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division

2,165 -
MBR10100-M3/4W

数据表

- TO-220-2 Tube Active Schottky 100 V 10A 800 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - - - Through Hole TO-220AC -65°C ~ 150°C
12TQ200

12TQ200

DIODE SCHOTTKY 200V 15A TO220AC

SMC Diode Solutions

11,942 -
12TQ200

数据表

- TO-220-2 Tube Active Schottky 200 V 15A 920 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 550 µA @ 200 V 300pF @ 5V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
VS-15ETH03-M3

VS-15ETH03-M3

DIODE GEN PURP 300V 15A TO220AC

Vishay General Semiconductor - Diodes Division

3,090 -
VS-15ETH03-M3

数据表

FRED Pt® TO-220-2 Tube Active Standard 300 V 15A 1.25 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 40 µA @ 300 V - - - Through Hole TO-220AC -65°C ~ 175°C
RGP25M-E3/54

RGP25M-E3/54

DIODE GEN PURP 1KV 2.5A DO201AD

Vishay General Semiconductor - Diodes Division

2,159 -
RGP25M-E3/54

数据表

SUPERECTIFIER® DO-201AD, Axial Tape & Reel (TR) Active Standard 1000 V 2.5A 1.3 V @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 60pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 175°C
VS-15TQ060S-M3

VS-15TQ060S-M3

DIODE SCHOTTKY 60V 15A TO263AB

Vishay General Semiconductor - Diodes Division

1,146 -
VS-15TQ060S-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 60 V 15A 620 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 60 V 720pF @ 5V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
5822SMJE3/TR13

5822SMJE3/TR13

DIODE SCHOTTKY 40V 3A SMCJ

Microchip Technology

7,821 -
5822SMJE3/TR13

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 40 V - - - Surface Mount DO-214AB (SMCJ) -55°C ~ 150°C
STPS3045DJFY-TR

STPS3045DJFY-TR

DIODE SCHOTTKY 45V 30A POWERFLAT

STMicroelectronics

2,490 -
STPS3045DJFY-TR

数据表

- 8-PowerVDFN Tape & Reel (TR) Active Schottky 45 V 30A 680 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 45 V - Automotive AEC-Q101 Surface Mount, Wettable Flank PowerFlat™ (5x6) -40°C ~ 175°C
RFV8BM6SFHTL

RFV8BM6SFHTL

DIODE GEN PURP 600V 8A TO252

Rohm Semiconductor

175 -
RFV8BM6SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 8A 2.8 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
BYV28-150-TR

BYV28-150-TR

DIODE AVALANCHE 150V 3.5A SOD64

Vishay General Semiconductor - Diodes Division

6,449 -
BYV28-150-TR

数据表

- SOD-64, Axial Tape & Reel (TR) Active Avalanche 150 V 3.5A 1.1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - - - Through Hole SOD-64 -55°C ~ 175°C
FSV2050V

FSV2050V

DIODE SCHOTTKY 50V 20A TO277-3

onsemi

13,867 -
FSV2050V

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 50 V 20A 550 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 320 µA @ 50 V - - - Surface Mount TO-277-3 -55°C ~ 150°C
GI751-E3/73

GI751-E3/73

DIODE GEN PURP 100V 6A P600

Vishay General Semiconductor - Diodes Division

2,679 -
GI751-E3/73

数据表

- P600, Axial Cut Tape (CT) Active Standard 100 V 6A 900 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 5 µA @ 100 V 150pF @ 4V, 1MHz - - Through Hole P600 -50°C ~ 150°C
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