单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UF1501S-B

UF1501S-B

DIODE GEN PURP 50V 1.5A DO41

Diodes Incorporated

9,988 -
UF1501S-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 50 V 1.5A 1 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 50 V 35pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
UF1502S-B

UF1502S-B

DIODE GEN PURP 100V 1.5A DO41

Diodes Incorporated

9,259 -
UF1502S-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 100 V 1.5A 1 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 100 V 35pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
UF1503S-B

UF1503S-B

DIODE GEN PURP 200V 1.5A DO41

Diodes Incorporated

6,330 -
UF1503S-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 200 V 1.5A 1 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 35pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
UF1504S-B

UF1504S-B

DIODE GEN PURP 400V 1.5A DO41

Diodes Incorporated

9,876 -
UF1504S-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 400 V 1.5A 1.3 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 35pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
UF1505S-B

UF1505S-B

DIODE GEN PURP 600V 1.5A DO41

Diodes Incorporated

4,392 -
UF1505S-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 600 V 1.5A 1.7 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 600 V 20pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
UF1506S-B

UF1506S-B

DIODE GEN PURP 800V 1.5A DO41

Diodes Incorporated

6,330 -
UF1506S-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 800 V 1.5A 1.7 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V 20pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
NXPLQSC10650Q

NXPLQSC10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

8,476 -
NXPLQSC10650Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.85 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 250pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC04650Q

NXPSC04650Q

DIODE SIL CARB 650V 4A TO220AC

WeEn Semiconductors

5,389 -
NXPSC04650Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC06650Q

NXPSC06650Q

DIODE SIL CARB 650V 6A TO220AC

WeEn Semiconductors

7,517 -
NXPSC06650Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC08650Q

NXPSC08650Q

DIODE SIL CARB 650V 8A TO220AC

WeEn Semiconductors

3,421 -
NXPSC08650Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
IDH10G65C5ZXKSA2

IDH10G65C5ZXKSA2

DIODE SCHOTTKY 650V 10A TO220-2

Infineon Technologies

8,552 -
IDH10G65C5ZXKSA2

数据表

* - Tube Obsolete - - - - - - - - - - - - -
IDH10G65C5ZXKSA1

IDH10G65C5ZXKSA1

DIODE SIL CARB 650V 10A TO220-2

Infineon Technologies

6,500 -
IDH10G65C5ZXKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
IDT04S60CHKSA1

IDT04S60CHKSA1

DIODE SCHOTTKY 600V TO220-2

Infineon Technologies

4,843 -
IDT04S60CHKSA1

数据表

- - Tube Obsolete - - - - - - - - - - - - -
IDT16S60CHKSA1

IDT16S60CHKSA1

DIODE SCHOTTKY 600V TO220-2

Infineon Technologies

2,715 -
IDT16S60CHKSA1

数据表

- - Tube Obsolete - - - - - - - - - - - - -
RM1200E-TP

RM1200E-TP

DIODE GP 1.2KV 500MA DO214AC

Micro Commercial Co

5,048 -
RM1200E-TP

数据表

- DO-214AC, SMA Tape & Reel (TR) Obsolete Standard 1200 V 500mA 2 V @ 500 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V 30pF @ 4V, 1MHz - - Surface Mount DO-214AC (SMAE) -55°C ~ 150°C
RM1500E-TP

RM1500E-TP

DIODE GP 1.5KV 500MA DO214AC

Micro Commercial Co

7,093 -
RM1500E-TP

数据表

- DO-214AC, SMA Tape & Reel (TR) Obsolete Standard 1500 V 500mA 2 V @ 500 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1500 V 30pF @ 4V, 1MHz - - Surface Mount DO-214AC (SMAE) -55°C ~ 150°C
RM1800E-TP

RM1800E-TP

DIODE GP 1.8KV 500MA DO214AC

Micro Commercial Co

2,322 -
RM1800E-TP

数据表

- DO-214AC, SMA Tape & Reel (TR) Obsolete Standard 1800 V 500mA 2 V @ 500 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1800 V 30pF @ 4V, 1MHz - - Surface Mount DO-214AC (SMAE) -55°C ~ 150°C
RURD420S9A_T

RURD420S9A_T

DIODE GEN PURP 200V 4A TO252AA

onsemi

4,332 -
RURD420S9A_T

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete Avalanche 200 V 4A 1 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 100 µA @ 200 V - - - Surface Mount TO-252AA -65°C ~ 175°C
CSICD10-1200 TR13

CSICD10-1200 TR13

DIODE SIL CARBIDE 1.2KV 10A DPAK

Central Semiconductor Corp

4,696 -
CSICD10-1200 TR13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 500pF @ 1V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
1SS388(TL3,F,D)

1SS388(TL3,F,D)

DIODE SCHOTTKY 45V 100MA ESC

Toshiba Semiconductor and Storage

8,483 -
1SS388(TL3,F,D)

数据表

- SC-79, SOD-523 Tape & Reel (TR) Obsolete Schottky 45 V 100mA 600 mV @ 50 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 10 V 18pF @ 0V, 1MHz - - Surface Mount ESC -40°C ~ 100°C
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户