单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5401GHA0G

1N5401GHA0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

2,389 -

-

- DO-201AD, Axial Tape & Box (TB) Discontinued at Digi-Key Standard 100 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5402G A0G

1N5402G A0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

9,320 -
1N5402G A0G

数据表

- DO-201AD, Axial Tape & Box (TB) Active Standard 200 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
1N5402GHA0G

1N5402GHA0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

5,431 -
1N5402GHA0G

数据表

- DO-201AD, Axial Tape & Box (TB) Active Standard 200 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5406GHA0G

1N5406GHA0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

5,199 -

-

- DO-201AD, Axial Tape & Box (TB) Active Standard 600 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5407GHA0G

1N5407GHA0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

7,699 -

-

- DO-201AD, Axial Tape & Box (TB) Discontinued at Digi-Key Standard 800 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5822 A0G

1N5822 A0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

4,902 -
1N5822 A0G

数据表

- DO-201AD, Axial Tape & Box (TB) Active Schottky 40 V 3A 525 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V 200pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 125°C
1T4G A0G

1T4G A0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

7,410 -
1T4G A0G

数据表

- T-18, Axial Tape & Box (TB) Active Standard 400 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
1T5G A0G

1T5G A0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

4,347 -
1T5G A0G

数据表

- T-18, Axial Tape & Box (TB) Active Standard 600 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
1T7G A0G

1T7G A0G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation

5,506 -
1T7G A0G

数据表

- T-18, Axial Tape & Box (TB) Active Standard 1000 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
2A02G A0G

2A02G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

4,489 -
2A02G A0G

数据表

- DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 100 V 2A 1.1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 15pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
2A07GHA0G

2A07GHA0G

DIODE GEN PURP 2A DO204AC

Taiwan Semiconductor Corporation

3,929 -

-

- DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 1000 V 2A 1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 15pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
3A100HA0G

3A100HA0G

DIODE GEN PURP 3A DO204AC

Taiwan Semiconductor Corporation

4,176 -

-

- DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 1000 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 27pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
3A60HA0G

3A60HA0G

DIODE GEN PURP 600V 3A DO204AC

Taiwan Semiconductor Corporation

7,092 -

-

- DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 600 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 27pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
6A100G A0G

6A100G A0G

DIODE GEN PURP 1KV 6A R-6

Taiwan Semiconductor Corporation

4,936 -
6A100G A0G

数据表

- R-6, Axial Tape & Box (TB) Active Standard 1000 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A10G A0G

6A10G A0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

9,402 -
6A10G A0G

数据表

- R-6, Axial Tape & Box (TB) Active Standard 100 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A10GHA0G

6A10GHA0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

6,202 -
6A10GHA0G

数据表

- R-6, Axial Tape & Box (TB) Active Standard 100 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
6A40G A0G

6A40G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

8,804 -
6A40G A0G

数据表

- R-6, Axial Tape & Box (TB) Active Standard 400 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A40GHA0G

6A40GHA0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

7,417 -
6A40GHA0G

数据表

- R-6, Axial Tape & Box (TB) Active Standard 400 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
6A60G A0G

6A60G A0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

8,673 -
6A60G A0G

数据表

- R-6, Axial Tape & Box (TB) Active Standard 600 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A80G A0G

6A80G A0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

3,113 -
6A80G A0G

数据表

- R-6, Axial Tape & Box (TB) Active Standard 800 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
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