单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
STTH30AC06FP

STTH30AC06FP

DIODE GP 600V 30A TO220FPAC

STMicroelectronics

1,201 -
STTH30AC06FP

数据表

ECOPACK® TO-220-3 Full Pack Tube Active Standard 600 V 30A 1.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 20 µA @ 600 V - - - Through Hole TO-220FPAC 175°C (Max)
APT60DQ120BG

APT60DQ120BG

DIODE GP 1.2KV 60A TO247

Microchip Technology

194 -
APT60DQ120BG

数据表

- TO-247-2 Tube Active Standard 1200 V 60A 3.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 320 ns 100 µA @ 1200 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
BY4

BY4

DIODE GEN PURP 4000V 1A AXIAL

Diotec Semiconductor

1,954 -
BY4

数据表

- Axial Tape & Reel (TR) Active Standard 4000 V 1A 4 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 1 µA @ 4000 V - - - Through Hole Axial -50°C ~ 150°C
VS-10ETS12FP-M3

VS-10ETS12FP-M3

DIODE GP 1.2KV 10A TO220-2FP

Vishay General Semiconductor - Diodes Division

1,692 -
VS-10ETS12FP-M3

数据表

- TO-220-2 Full Pack Tube Active Standard 1200 V 10A 1.1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
VS-20ETS08S-M3

VS-20ETS08S-M3

DIODE GEN PURP 800V 20A TO263AB

Vishay General Semiconductor - Diodes Division

5,643 -
VS-20ETS08S-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 800 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 800 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-20ETS12S-M3

VS-20ETS12S-M3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

2,229 -
VS-20ETS12S-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 1200 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
DURF840

DURF840

DIODE GEN PURP 400V 8A ITO220AC

Littelfuse Inc.

6,385 -
DURF840

数据表

DUR TO-220-2 Full Pack, Isolated Tab Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 400 V - - - Through Hole ITO-220AC -55°C ~ 150°C
VS-HFA08SD60STR-M3

VS-HFA08SD60STR-M3

DIODE GEN PURP 600V 8A D-PAK

Vishay General Semiconductor - Diodes Division

3,449 -
VS-HFA08SD60STR-M3

数据表

HEXFRED® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 5 µA @ 600 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
IDD03SG60CXTMA2

IDD03SG60CXTMA2

DIODE SIL CARB 600V 3A TO252-3

Infineon Technologies

2,539 -
IDD03SG60CXTMA2

数据表

CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 3A 2.3 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 600 V 60pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
RFN20TJ6SGC9

RFN20TJ6SGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

316 -
RFN20TJ6SGC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C (Max)
ACDBA1100LR-HF

ACDBA1100LR-HF

DIODE SCHOTTKY 100V 1A DO214AC

Comchip Technology

1,448 -
ACDBA1100LR-HF

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Schottky 100 V 1A 750 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V 120pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount DO-214AC (SMA) -55°C ~ 150°C
S4D02120E

S4D02120E

DIODE SIL CARBIDE 1.2KV 2A DPAK

SMC Diode Solutions

6,747 -
S4D02120E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 116pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
NRVTS30100MFST3G

NRVTS30100MFST3G

DIODE SCHOTTKY 100V 30A 5DFN

onsemi

3,043 -
NRVTS30100MFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 100 V 30A 760 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 2540pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
IDH04G65C5XKSA2

IDH04G65C5XKSA2

DIODE SIL CARB 650V 4A TO220-2-1

Infineon Technologies

1,631 -
IDH04G65C5XKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
APT30D120BG

APT30D120BG

DIODE GEN PURP 1.2KV 30A TO247

Microchip Technology

180 -
APT30D120BG

数据表

- TO-247-2 Tube Active Standard 1200 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 370 ns 250 µA @ 1200 V - - - Through Hole TO-247 -55°C ~ 175°C
C3D04060E

C3D04060E

DIODE SIL CARB 600V 13.5A TO252

Wolfspeed, Inc.

3,933 -
C3D04060E

数据表

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 600 V 13.5A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 251pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
C3D04060F

C3D04060F

DIODE SIL CARB 600V 9A TO220-F2

Wolfspeed, Inc.

3,228 -
C3D04060F

数据表

Z-Rec® TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 600 V 9A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 251pF @ 0V, 1MHz - - Through Hole TO-220-F2 -55°C ~ 175°C
C6D04065A

C6D04065A

DIODE SIL CARB 650V 18A TO220-2

Wolfspeed, Inc.

870 -
C6D04065A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 18A 1.27 V @ 4 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 -
VS-60APU06-N3

VS-60APU06-N3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

282 -
VS-60APU06-N3

数据表

FRED Pt® TO-247-3 Tube Active Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - - - Through Hole TO-247AC -55°C ~ 175°C
BY6

BY6

DIODE GEN PURP 6000V 1A AXIAL

Diotec Semiconductor

808 -
BY6

数据表

- Axial Tape & Reel (TR) Active Standard 6000 V 1A 6 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 1 µA @ 6000 V - - - Through Hole Axial -50°C ~ 150°C
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