单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
6A60GHB0G

6A60GHB0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

3,662 -
6A60GHB0G

数据表

- R-6, Axial Bulk Discontinued at Digi-Key Standard 600 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
6A80G B0G

6A80G B0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

5,905 -
6A80G B0G

数据表

- R-6, Axial Bulk Active Standard 800 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A80GHB0G

6A80GHB0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

8,538 -
6A80GHB0G

数据表

- R-6, Axial Bulk Active Standard 800 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
BA157G B0G

BA157G B0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

6,978 -
BA157G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Discontinued at Digi-Key Standard 400 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
BA157GHB0G

BA157GHB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

7,275 -
BA157GHB0G

数据表

- DO-204AL, DO-41, Axial Bulk Discontinued at Digi-Key Standard 400 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 15pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
BA158G B0G

BA158G B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

5,440 -
BA158G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Discontinued at Digi-Key Standard 600 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 600 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
BA158GHB0G

BA158GHB0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,375 -
BA158GHB0G

数据表

- DO-204AL, DO-41, Axial Bulk Discontinued at Digi-Key Standard 600 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 600 V 15pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
BA159G B0G

BA159G B0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

6,555 -
BA159G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Discontinued at Digi-Key Standard 1000 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 1000 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
BA159GHB0G

BA159GHB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

4,651 -
BA159GHB0G

数据表

- DO-204AL, DO-41, Axial Bulk Discontinued at Digi-Key Standard 1000 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 1000 V 15pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
FR104G B0G

FR104G B0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

9,589 -
FR104G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 400 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
FR106G B0G

FR106G B0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

7,995 -
FR106G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 800 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
FR107G B0G

FR107G B0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

9,206 -
FR107G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
FR156GHB0G

FR156GHB0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

4,048 -
FR156GHB0G

数据表

- DO-204AC, DO-15, Axial Bulk Active Standard 800 V 1.5A 1.3 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V 20pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
FR157G B0G

FR157G B0G

DIODE GEN PURP 1.5A DO204AC

Taiwan Semiconductor Corporation

6,620 -
FR157G B0G

数据表

- DO-204AC, DO-15, Axial Bulk Active Standard 1000 V 1.5A 1.3 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 20pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
FR205G B0G

FR205G B0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,956 -
FR205G B0G

数据表

- DO-204AC, DO-15, Axial Bulk Active Standard 600 V 2A 1.3 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V 10pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
FR207G B0G

FR207G B0G

DIODE GEN PURP 2A DO204AC

Taiwan Semiconductor Corporation

8,920 -
FR207G B0G

数据表

- DO-204AC, DO-15, Axial Bulk Discontinued at Digi-Key Standard 1000 V 2A 1.3 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 10pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
FR305G B0G

FR305G B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

9,734 -
FR305G B0G

数据表

- DO-201AD, Axial Bulk Active Standard 600 V 3A 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V 30pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
FR306G B0G

FR306G B0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

3,911 -
FR306G B0G

数据表

- DO-201AD, Axial Bulk Active Standard 800 V 3A 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V 30pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
FR307G B0G

FR307G B0G

DIODE GEN PURP 3A DO201AD

Taiwan Semiconductor Corporation

4,353 -
FR307G B0G

数据表

- DO-201AD, Axial Bulk Active Standard 1000 V 3A 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 30pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
HER107G B0G

HER107G B0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

8,034 -
HER107G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 800 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
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