单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-20TQ040THN3

VS-20TQ040THN3

DIODE SCHOTTKY 40V 20A TO220AC

Vishay General Semiconductor - Diodes Division

6,687 -
VS-20TQ040THN3

数据表

- TO-220-2 Tube Last Time Buy Schottky 40 V 20A 570 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 2.7 mA @ 40 V 1400pF @ 5V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
VS-94-2140PBF

VS-94-2140PBF

DIODE GP 90A TO247

Vishay General Semiconductor - Diodes Division

9,607 -

-

- - Tube Obsolete - - - - - - - - - - - - -
VS-S1518

VS-S1518

DIODE GEN PURP TO214

Vishay General Semiconductor - Diodes Division

9,973 -

-

- - Tube Obsolete - - - - - - - - - - - - -
VS-96-1050PBF

VS-96-1050PBF

DIODE GP 90A TO247

Vishay General Semiconductor - Diodes Division

3,047 -

-

- - Tube Obsolete - - - - - - - - - - - - -
VS-80-1320PBF

VS-80-1320PBF

DIODE GP 80A TO247

Vishay General Semiconductor - Diodes Division

7,318 -

-

- - Tube Obsolete - - - - - - - - - - - - -
VS-S1558

VS-S1558

DIODE GEN PURP TO214

Vishay General Semiconductor - Diodes Division

9,448 -

-

- - Tube Obsolete - - - - - - - - - - - - -
SIDC14D60E6X7SA1

SIDC14D60E6X7SA1

DIODE GEN PURP 600V 30A DIE

Infineon Technologies

7,285 -

-

- Die Bulk Obsolete Standard 600 V 30A 1.25 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -55°C ~ 150°C
SIDC14D60C8X1SA1

SIDC14D60C8X1SA1

DIODE GEN PURP 600V 50A DIE

Infineon Technologies

6,081 -
SIDC14D60C8X1SA1

数据表

- Die Bulk Active Standard 600 V 50A 1.9 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC09D60F6X1SA1

SIDC09D60F6X1SA1

DIODE GEN PURP 600V 30A DIE

Infineon Technologies

6,554 -
SIDC09D60F6X1SA1

数据表

- Die Bulk Obsolete Standard 600 V 30A 1.6 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC04D60F6X7SA1

SIDC04D60F6X7SA1

DIODE GEN PURP 600V 9A DIE

Infineon Technologies

4,524 -

-

- Die Bulk Obsolete Standard 600 V 9A 1.6 V @ 9 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC03D60F6X1SA1

SIDC03D60F6X1SA1

DIODE GEN PURP 600V 6A DIE

Infineon Technologies

8,959 -
SIDC03D60F6X1SA1

数据表

- Die Bulk Obsolete Standard 600 V 6A 1.6 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC06D60E6X7SA1

SIDC06D60E6X7SA1

DIODE GEN PURP 600V 10A DIE

Infineon Technologies

5,222 -

-

- Die Bulk Obsolete Standard 600 V 10A 1.25 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -55°C ~ 150°C
SIDC14D60F6X7SA1

SIDC14D60F6X7SA1

DIODE GEN PURP 600V 45A DIE

Infineon Technologies

5,237 -

-

- Die Bulk Obsolete Standard 600 V 45A 1.6 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC09D60F6X1SA4

SIDC09D60F6X1SA4

DIODE GEN PURP 600V 30A DIE

Infineon Technologies

8,517 -
SIDC09D60F6X1SA4

数据表

- Die Bulk Obsolete Standard 600 V 30A 1.6 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC06D60F6X1SA4

SIDC06D60F6X1SA4

DIODE GEN PURP 600V 15A DIE

Infineon Technologies

8,877 -
SIDC06D60F6X1SA4

数据表

- Die Bulk Obsolete Standard 600 V 15A 1.6 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC14D60F6X1SA4

SIDC14D60F6X1SA4

DIODE GEN PURP 600V 45A DIE

Infineon Technologies

8,833 -
SIDC14D60F6X1SA4

数据表

- Die Bulk Obsolete Standard 600 V 45A 1.6 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC07D60F6X1SA3

SIDC07D60F6X1SA3

DIODE GEN PURP 600V 22.5A DIE

Infineon Technologies

7,537 -
SIDC07D60F6X1SA3

数据表

- Die Bulk Obsolete Standard 600 V 22.5A 1.6 V @ 22.5 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
SIDC06D65C8X1SA1

SIDC06D65C8X1SA1

DIODE GEN PURP 650V 20A DIE

Infineon Technologies

9,183 -
SIDC06D65C8X1SA1

数据表

- Die Bulk Active Standard 650 V 20A 1.87 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 240 nA @ 650 V - - - Surface Mount Die -40°C ~ 175°C
SIDC07D60E6X1SA3

SIDC07D60E6X1SA3

DIODE GEN PURP 600V 15A DIE

Infineon Technologies

5,307 -
SIDC07D60E6X1SA3

数据表

- Die Bulk Obsolete Standard 600 V 15A 1.25 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -55°C ~ 150°C
SIDC06D60F6X7SA1

SIDC06D60F6X7SA1

DIODE GEN PURP 600V 15A DIE

Infineon Technologies

4,988 -

-

- Die Bulk Obsolete Standard 600 V 15A 1.6 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Die -40°C ~ 175°C
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