单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
C4D30120H

C4D30120H

DIODE SIL CARB 1.2KV 94A TO247-2

Wolfspeed, Inc.

780 -
C4D30120H

数据表

- TO-247-2 Bulk Active SiC (Silicon Carbide) Schottky 1200 V 94A 1.8 V @ 30 A No Recovery Time > 500mA (Io) - 250 µA @ 1200 V 2177pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
C6D50065H

C6D50065H

SIC, SCHOTTKY DIODE, 136A, 650V,

Wolfspeed, Inc.

1,383 -
C6D50065H

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 136A 1.5 V @ 20 A No Recovery Time > 500mA (Io) - 100 µA @ 650 V 2819pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
C4D20120A

C4D20120A

DIODE SIL CARB 1.2KV 54.5A TO220

Wolfspeed, Inc.

5,493 -
C4D20120A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54.5A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1500pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
LSIC2SD120D20A

LSIC2SD120D20A

SIC SCHOTTKY DIODE 1200V 20A TO2

Littelfuse Inc.

750 -
LSIC2SD120D20A

数据表

Gen2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 55A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1310pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263-2L -55°C ~ 175°C
UJ3D1250K

UJ3D1250K

DIODE SIL CARB 1.2KV 50A TO247-3

Qorvo

6,427 -
UJ3D1250K

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 2340pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
VS-T40HF60

VS-T40HF60

DIODE GEN PURP 600V 40A D-55

Vishay General Semiconductor - Diodes Division

124 -
VS-T40HF60

数据表

- D-55 T-Module Bulk Active Standard 600 V 40A - Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 600 V - - - Chassis Mount D-55 -
VS-HFA135NH40PBF

VS-HFA135NH40PBF

DIODE GEN PURP 400V 275A D-67

Vishay General Semiconductor - Diodes Division

136 -
VS-HFA135NH40PBF

数据表

HEXFRED® D-67 HALF-PAK Bulk Active Standard 400 V 275A 2 V @ 270 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 3 mA @ 400 V - - - Chassis Mount D-67 HALF-PAK -
STTH200F04TV1

STTH200F04TV1

DIODE GEN PURP 400V 100A ISOTOP

STMicroelectronics

136 -
STTH200F04TV1

数据表

- ISOTOP Tube Active Standard 400 V 100A 1.45 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 75 µA @ 400 V - - - Chassis Mount ISOTOP -55°C ~ 150°C
VS-243NQ100PBF

VS-243NQ100PBF

DIODE SCHOTTKY 100V 240A D-67

Vishay General Semiconductor - Diodes Division

168 -
VS-243NQ100PBF

数据表

- D-67 HALF-PAK Bulk Active Schottky 100 V 240A 950 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 6 mA @ 100 V 5500pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -55°C ~ 175°C
C6D25170H

C6D25170H

2 5A 1700V SIC, SCHOTTKY DIODE

Wolfspeed, Inc.

539 -
C6D25170H

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 83A 1.7 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 1700 V 3108pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
VS-T85HFL100S05

VS-T85HFL100S05

DIODE GEN PURP 1KV 85A D-55

Vishay General Semiconductor - Diodes Division

368 -
VS-T85HFL100S05

数据表

- D-55 T-Module Bulk Active Standard 1000 V 85A - Fast Recovery =< 500ns, > 200mA (Io) 500 ns 20 mA @ 1000 V - - - Chassis Mount D-55 -
VS-400UR120D

VS-400UR120D

DIODE GP REV 1.2KV 400A DO205AB

Vishay General Semiconductor - Diodes Division

28 -
VS-400UR120D

数据表

- DO-205AB, DO-9, Stud Bulk Last Time Buy Standard, Reverse Polarity 1200 V 400A 1.62 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 1200 V - - - Stud Mount DO-205AB (DO-9) -40°C ~ 200°C
406DMQ200

406DMQ200

DIODE SCHOTTKY 200V 200A PRM4

SMC Diode Solutions

82 -
406DMQ200

数据表

- PRM4 Bulk Active Schottky 200 V 200A 990 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 200 V 3000pF @ 5V, 1MHz - - Chassis Mount PRM4 (Isolated) -55°C ~ 175°C
APTDF400U120G

APTDF400U120G

DIODE GEN PURP 1.2KV 450A LP4

Microchip Technology

478 -
APTDF400U120G

数据表

- LP4 Bulk Active Standard 1200 V 450A 2.5 V @ 500 A Fast Recovery =< 500ns, > 200mA (Io) 110 ns 2.5 mA @ 1200 V - - - Chassis Mount LP4 -
MSC030SDA330B

MSC030SDA330B

DIODE SIL CARB 3.3KV 30A TO247

Microchip Technology

36 -

-

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 3300 V 30A - No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
MCX5622

MCX5622

UFR,FRR

Microchip Technology

45 -
MCX5622

数据表

- - Bulk Active - - - - - - - - - - - - -
JANS1N5822US

JANS1N5822US

DIODE SCHOTTKY 40V 3A B SQ-MELF

Microchip Technology

121 -
JANS1N5822US

数据表

- SQ-MELF, B Bulk Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - - - Military MIL-PRF-19500/620 Surface Mount B, SQ-MELF -65°C ~ 150°C
PNE20010EXD-QX

PNE20010EXD-QX

DIODE GEN PURP 200V 1A SOD323HP

Nexperia USA Inc.

9,000 -
PNE20010EXD-QX

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Standard 200 V 1A 1.02 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 75 nA @ 200 V 10pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SOD323HP 175°C
PMEG45T20EXDX

PMEG45T20EXDX

DIODE SCHOTTKY 45V 2A SOD323HP

Nexperia USA Inc.

4,500 -
PMEG45T20EXDX

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Schottky 45 V 2A 560 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 9 ns 25 µA @ 45 V 160pF @ 4V, 1MHz - - Surface Mount SOD323HP 175°C
SMD34HE1-TP

SMD34HE1-TP

DIODE SCHOTTKY 40V 3A SOD123HE1

Micro Commercial Co

3,000 -
SMD34HE1-TP

数据表

- SOD-123H Tape & Reel (TR) Active Schottky 40 V 3A 520 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 40 V - - - Surface Mount SOD-123HE1 -55°C ~ 125°C
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