单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SSC53L-E3/9AT

SSC53L-E3/9AT

DIODE SCHOTTKY 30V 5A DO214AB

Vishay General Semiconductor - Diodes Division

1,144 -
SSC53L-E3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Schottky 30 V 5A 450 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 700 µA @ 30 V - - - Surface Mount DO-214AB (SMC) -65°C ~ 150°C
PDS4150Q-13

PDS4150Q-13

DIODE SCHOTTKY 150V 4A POWERDI5

Diodes Incorporated

9,943 -
PDS4150Q-13

数据表

- PowerDI™ 5 Tape & Reel (TR) Active Schottky 150 V 4A 810 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 150 V - Automotive AEC-Q101 Surface Mount PowerDI™ 5 -65°C ~ 175°C
STTH2R06UFY

STTH2R06UFY

DIODE GEN PURP 600V 2A SMBFLAT

STMicroelectronics

4,414 -
STTH2R06UFY

数据表

- DO-221AA, SMB Flat Leads Tape & Reel (TR) Active Standard 600 V 2A 1.9 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 2 µA @ 600 V - Automotive AEC-Q101 Surface Mount SMBflat -40°C ~ 175°C
V8P6-M3/86A

V8P6-M3/86A

DIODE SCHOTTKY 60V 4.2A TO277A

Vishay General Semiconductor - Diodes Division

3,417 -
V8P6-M3/86A

数据表

eSMP®, TMBS® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 4.2A 610 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 60 V - - - Surface Mount TO-277A (SMPC) -40°C ~ 150°C
BYV26B-TAP

BYV26B-TAP

DIODE AVALANCHE 400V 1A SOD57

Vishay General Semiconductor - Diodes Division

42,768 -
BYV26B-TAP

数据表

- SOD-57, Axial Cut Tape (CT) Active Avalanche 400 V 1A 2.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 400 V - - - Through Hole SOD-57 -55°C ~ 175°C
BYW55-TR

BYW55-TR

DIODE AVALANCHE 800V 2A SOD57

Vishay General Semiconductor - Diodes Division

23,092 -
BYW55-TR

数据表

- SOD-57, Axial Tape & Reel (TR) Active Avalanche 800 V 2A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 4 µs 1 µA @ 800 V - - - Through Hole SOD-57 -55°C ~ 175°C
SF1200-TAP

SF1200-TAP

DIODE GEN PURP 1.2KV 1A SOD57

Vishay General Semiconductor - Diodes Division

15,830 -
SF1200-TAP

数据表

- SOD-57, Axial Cut Tape (CT) Active Standard 1200 V 1A 3.4 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1200 V - - - Through Hole SOD-57 125°C (Max)
MURS340-E3/9AT

MURS340-E3/9AT

DIODE GEN PURP 400V 3A DO214AB

Vishay General Semiconductor - Diodes Division

10,734 -
MURS340-E3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 400 V 3A 1.28 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 400 V - - - Surface Mount DO-214AB (SMC) -65°C ~ 175°C
VS-30WQ04FNTRL-M3

VS-30WQ04FNTRL-M3

DIODE SCHOTTKY 40V 3.5A DPAK

Vishay General Semiconductor - Diodes Division

8,855 -
VS-30WQ04FNTRL-M3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 40 V 3.5A 530 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V 189pF @ 5V, 1MHz - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
V10PM6-M3/H

V10PM6-M3/H

DIODE SCHOTTKY 60V 10A TO277A

Vishay General Semiconductor - Diodes Division

5,826 -
V10PM6-M3/H

数据表

eSMP®, TMBS® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 10A 640 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 60 V 1650pF @ 4V, 1MHz - - Surface Mount TO-277A (SMPC) -40°C ~ 175°C
RBR2VWM60ATFTR

RBR2VWM60ATFTR

DIODE SCHOTTKY 60V 2A PMDE

Rohm Semiconductor

3,826 -
RBR2VWM60ATFTR

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Schottky 60 V 2A 650 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 75 µA @ 60 V - Automotive AEC-Q101 Surface Mount PMDE 150°C
STTH110UFY

STTH110UFY

DIODE GEN PURP 1KV 1A SMBFLAT

STMicroelectronics

2,821 -
STTH110UFY

数据表

- DO-221AA, SMB Flat Leads Tape & Reel (TR) Active Standard 1000 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V - Automotive AEC-Q101 Surface Mount SMBflat -40°C ~ 175°C
VS-6ESU06-M3/86A

VS-6ESU06-M3/86A

DIODE GEN PURP 600V 6A TO277A

Vishay General Semiconductor - Diodes Division

1,448 -
VS-6ESU06-M3/86A

数据表

FRED Pt® TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 600 V 6A 1.3 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 58 ns 5 µA @ 600 V - - - Surface Mount TO-277A (SMPC) -65°C ~ 175°C
RB060MM-30TFTR

RB060MM-30TFTR

DIODE SCHOTTKY 30V 2A PMDU

Rohm Semiconductor

6,573 -
RB060MM-30TFTR

数据表

- SOD-123F Tape & Reel (TR) Active Schottky 30 V 2A 490 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V - Automotive AEC-Q101 Surface Mount PMDU 150°C (Max)
AU3PM-M3/86A

AU3PM-M3/86A

DIODE AVALANCHE 1KV 1.4A TO277A

Vishay General Semiconductor - Diodes Division

5,765 -
AU3PM-M3/86A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 1000 V 1.4A 2.5 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V 42pF @ 4V, 1MHz - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
ES3DHE3_A/I

ES3DHE3_A/I

DIODE GEN PURP 200V 3A DO214AB

Vishay General Semiconductor - Diodes Division

4,650 -
ES3DHE3_A/I

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 200 V 3A 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 200 V 45pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
RFN1VWM2STR

RFN1VWM2STR

DIODE GEN PURP 200V 1A PMDE

Rohm Semiconductor

3,069 -
RFN1VWM2STR

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Standard 200 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 200 V - - - Surface Mount PMDE 175°C
SDD660

SDD660

DIODE GEN PURP 600V 6A DPAK

SMC Diode Solutions

2,628 -
SDD660

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - - - Surface Mount DPAK -55°C ~ 150°C
RB168VWM150TFTR

RB168VWM150TFTR

DIODE SCHOTTKY 150V 1A PMDE

Rohm Semiconductor

2,179 -
RB168VWM150TFTR

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Schottky 150 V 1A 890 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1 µA @ 150 V - - - Surface Mount PMDE 175°C
ES3A-E3/57T

ES3A-E3/57T

DIODE GEN PURP 50V 3A DO214AB

Vishay General Semiconductor - Diodes Division

2,010 -
ES3A-E3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 50 V 3A 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 50 V 45pF @ 4V, 1MHz - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
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