单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CMR3U-10M TR13 PBFREE

CMR3U-10M TR13 PBFREE

DIODE GEN PURP 1KV 3A SMC

Central Semiconductor Corp

9,176 -
CMR3U-10M TR13 PBFREE

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 1000 V 3A 2 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 5 µA @ 1000 V - - - Surface Mount SMC -65°C ~ 175°C
VS-8EWF06S-M3

VS-8EWF06S-M3

DIODE GEN PURP 600V 8A DPAK

Vishay General Semiconductor - Diodes Division

2,573 -
VS-8EWF06S-M3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 600 V 8A 1.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 600 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
C3D04060A

C3D04060A

DIODE SIL CARB 600V 13.5A TO220

Wolfspeed, Inc.

5,109 -
C3D04060A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 13.5A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 251pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
APT75DQ60BG

APT75DQ60BG

DIODE GP 600V 75A TO247

Microchip Technology

22,922 -
APT75DQ60BG

数据表

- TO-247-2 Tube Active Standard 600 V 75A 2.5 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 31 ns 25 µA @ 600 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
JANTXV1N4148UR-1

JANTXV1N4148UR-1

DIODE GEN PURP 75V 200MA DO213AA

Microchip Technology

7,199 -
JANTXV1N4148UR-1

数据表

- DO-213AA Bulk Active Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 25 nA @ 20 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount DO-213AA -65°C ~ 175°C
C4D02120E-TR

C4D02120E-TR

DIODE SIL CARB 1.2KV 10A TO252-2

Wolfspeed, Inc.

11,748 -
C4D02120E-TR

数据表

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 167pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
C4D02120E

C4D02120E

DIODE SIL CARB 1.2KV 10A TO252-2

Wolfspeed, Inc.

10,786 -
C4D02120E

数据表

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 167pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
STPSC6H065B-TR

STPSC6H065B-TR

DIODE SIL CARBIDE 650V 6A DPAK

STMicroelectronics

5,633 -
STPSC6H065B-TR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
DSEI12-12A

DSEI12-12A

DIODE GEN PURP 1.2KV 11A TO220AC

IXYS

3,847 -
DSEI12-12A

数据表

- TO-220-2 Tube Active Standard 1200 V 11A 2.6 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 250 µA @ 1200 V - - - Through Hole TO-220AC -40°C ~ 150°C
STTH30L06G-TR

STTH30L06G-TR

DIODE GEN PURP 600V 30A D2PAK

STMicroelectronics

3,910 -
STTH30L06G-TR

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 600 V - - - Surface Mount D2PAK 175°C (Max)
STPSC2H12B2Y-TR

STPSC2H12B2Y-TR

DIODE SIL CARBIDE 1.2KV 5A DPAK

STMicroelectronics

12,015 -
STPSC2H12B2Y-TR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.5 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 12 µA @ 1200 V 190pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
GB02SLT12-214

GB02SLT12-214

DIODE SIL CARB 1.2KV 2A DO214AA

GeneSiC Semiconductor

12,092 -
GB02SLT12-214

数据表

SiC Schottky MPS™ DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.8 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 131pF @ 1V, 1MHz - - Surface Mount DO-214AA -55°C ~ 175°C
DST2045AX

DST2045AX

DIODE SCHOTTKY 45V 20A P600

Littelfuse Inc.

19,025 -
DST2045AX

数据表

- P600, Axial Tape & Reel (TR) Active Schottky 45 V 20A 580 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 1.2 mA @ 45 V - - - Through Hole P600 -55°C ~ 155°C
DSI30-12AS-TRL

DSI30-12AS-TRL

DIODE GEN PURP 1.2KV 30A TO263AA

IXYS

8,015 -
DSI30-12AS-TRL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1200 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
VS-E5TH3012-M3

VS-E5TH3012-M3

DIODE GEN PURP 1.2KV 30A TO220AC

Vishay General Semiconductor - Diodes Division

5,292 -
VS-E5TH3012-M3

数据表

FRED Pt® TO-220-2 Tube Active Standard 1200 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 58 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
APT75DQ120BG

APT75DQ120BG

DIODE GP 1.2KV 75A TO247

Microchip Technology

3,293 -
APT75DQ120BG

数据表

- TO-247-2 Tube Active Standard 1200 V 75A 3.1 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 325 ns 100 µA @ 1200 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
VS-20ETS12FP-M3

VS-20ETS12FP-M3

DIODE GP 1.2KV 20A TO220-2FP

Vishay General Semiconductor - Diodes Division

1,182 -
VS-20ETS12FP-M3

数据表

- TO-220-2 Full Pack Tube Active Standard 1200 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 100 µA @ 1200 V - - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
APT60D60BG

APT60D60BG

DIODE GP 600V 60A TO247

Microchip Technology

1,014 -
APT60D60BG

数据表

- TO-247-2 Tube Active Standard 600 V 60A 1.8 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 250 µA @ 600 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
VS-20ETF12-M3

VS-20ETF12-M3

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division

7,985 -
VS-20ETF12-M3

数据表

- TO-220-2 Tube Active Standard 1200 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - - - Through Hole TO-220AC -40°C ~ 150°C
C3D06060A

C3D06060A

DIODE SIL CARB 600V 19A TO220-2

Wolfspeed, Inc.

3,162 -
C3D06060A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 19A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 294pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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