SCRs

制造商 系列 封装/外壳 包装 产品状态 电压 - 关断状态 电压 - 栅极触发 (Vgt)(最大值) 电流 - 栅极触发 (Igt)(最大值) 电压 - 导通状态 (Vtm)(最大值) 电流 - 导通状态 (It (AV))(最大值) 电流 - 导通状态 (It (RMS))(最大值) 保持电流 (Ih)(最大值) 电流 - 关断状态(最大值) 电流 - 非重复浪涌 50, 60Hz (Itsm) SCR 类型 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 电压 - 关断状态 电压 - 栅极触发 (Vgt)(最大值) 电流 - 栅极触发 (Igt)(最大值) 电压 - 导通状态 (Vtm)(最大值) 电流 - 导通状态 (It (AV))(最大值) 电流 - 导通状态 (It (RMS))(最大值) 保持电流 (Ih)(最大值) 电流 - 关断状态(最大值) 电流 - 非重复浪涌 50, 60Hz (Itsm) SCR 类型 工作温度 等级 认证 安装类型 供应商设备封装
MCR100-3 A1G

MCR100-3 A1G

SCR 100V 800MA TO92

Taiwan Semiconductor Corporation

7,209 -
MCR100-3 A1G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete 100 V 800 mV 200 µA 1.7 V - 800 mA 5 mA 10 µA 10A @ 60Hz Sensitive Gate -40°C ~ 125°C (TJ) - - Through Hole TO-92
MCR100-4 A1G

MCR100-4 A1G

SCR 200V 800MA TO92

Taiwan Semiconductor Corporation

4,619 -
MCR100-4 A1G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete 200 V 800 mV 200 µA 1.7 V - 800 mA 5 mA 10 µA 10A @ 60Hz Sensitive Gate -40°C ~ 125°C (TJ) - - Through Hole TO-92
MCR100-5 A1G

MCR100-5 A1G

SCR 300V 800MA TO92

Taiwan Semiconductor Corporation

7,469 -
MCR100-5 A1G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete 300 V 800 mV 200 µA 1.7 V - 800 mA 5 mA 10 µA 10A @ 60Hz Sensitive Gate -40°C ~ 125°C (TJ) - - Through Hole TO-92
MCR100-6 A1G

MCR100-6 A1G

SCR 400V 800MA TO92

Taiwan Semiconductor Corporation

5,490 -
MCR100-6 A1G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete 400 V 800 mV 200 µA 1.7 V - 800 mA 5 mA 10 µA 10A @ 60Hz Sensitive Gate -40°C ~ 125°C (TJ) - - Through Hole TO-92
MCR100-7 A1G

MCR100-7 A1G

SCR 500V 800MA TO92

Taiwan Semiconductor Corporation

3,042 -
MCR100-7 A1G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete 500 V 800 mV 200 µA 1.7 V - 800 mA 5 mA 10 µA 10A @ 60Hz Sensitive Gate -40°C ~ 125°C (TJ) - - Through Hole TO-92
BT169H,412

BT169H,412

SCR 800V 800MA TO92-3

WeEn Semiconductors

4,739 -
BT169H,412

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Active 800 V 800 mV 100 µA 1.7 V 500 mA 800 mA 3 mA 100 µA 9A, 10A Sensitive Gate - - - Through Hole TO-92-3
BT169D-L,112

BT169D-L,112

SCR 400V 800MA TO92-3

WeEn Semiconductors

4,570 -
BT169D-L,112

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tube Active 400 V 800 mV 50 µA 1.7 V 500 mA 800 mA 5 mA 100 µA 8A, 9A Sensitive Gate - - - Through Hole TO-92-3
BT169D/DG,126

BT169D/DG,126

SCR 400V 800MA TO92-3

WeEn Semiconductors

6,635 -
BT169D/DG,126

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Active 400 V 800 mV 200 µA 1.7 V 500 mA 800 mA 5 mA 100 µA 8A, 9A Sensitive Gate - - - Through Hole TO-92-3
BT169G-LML

BT169G-LML

SCR 600V 800MA TO92-3

WeEn Semiconductors

9,464 -
BT169G-LML

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Active 600 V 800 mV 50 µA 1.7 V 500 mA 800 mA 1 mA 2 µA 8A, 9A Sensitive Gate 125°C (TJ) - - Through Hole TO-92-3
BT169GEP

BT169GEP

SCR 600V 800MA TO92-3

WeEn Semiconductors

9,416 -
BT169GEP

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Active 600 V 800 mV 200 µA 1.7 V 500 mA 800 mA 5 mA 100 µA 8A, 9A Sensitive Gate 125°C (TJ) - - Through Hole TO-92-3
BT149B,126

BT149B,126

SCR 200V 800MA TO92-3

NXP USA Inc.

8,688 -
BT149B,126

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete 200 V 800 mV 200 µA 1.7 V 500 mA 800 mA 5 mA 100 µA 8A, 9A Sensitive Gate - - - Through Hole TO-92-3
BT169H/L01EP

BT169H/L01EP

SCR 800V 800MA TO92-3

WeEn Semiconductors

5,194 -
BT169H/L01EP

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active 800 V 800 mV 100 µA 1.7 V 500 mA 800 mA 3 mA 100 µA 9A, 10A Sensitive Gate -40°C ~ 125°C - - Through Hole TO-92-3
BT169H-LML

BT169H-LML

SCR 800V 800MA TO92-3

WeEn Semiconductors

5,904 -
BT169H-LML

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Active 800 V 800 mV 50 µA 1.7 V 500 mA 800 mA 3 mA 100 µA 9A, 10A Sensitive Gate 125°C (TJ) - - Through Hole TO-92-3
BT149G,412

BT149G,412

SCR 600V 800MA TO92-3

WeEn Semiconductors

3,941 -
BT149G,412

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Active 600 V 800 mV 200 µA 1.7 V 500 mA 800 mA 5 mA 100 µA 8A, 9A Sensitive Gate - - - Through Hole TO-92-3
SD1A220A-13

SD1A220A-13

THYRISTOR SMA T&R 5K

Diodes Incorporated

7,993 -

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
BT169H,112

BT169H,112

SCR 800V 800MA TO92-3

NXP USA Inc.

2,140 -
BT169H,112

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tube Obsolete 800 V 800 mV 100 µA 1.7 V 500 mA 800 mA 3 mA 100 µA 9A, 10A Sensitive Gate - - - Through Hole TO-92-3
P0111DA 1AA3

P0111DA 1AA3

SCR 400V 800MA TO92-3

STMicroelectronics

8,725 -
P0111DA 1AA3

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Active 400 V 800 mV 25 µA 1.95 V 500 mA 800 mA 5 mA 10 µA 7A, 8A Sensitive Gate -40°C ~ 125°C - - Through Hole TO-92-3
MCR100-3RL

MCR100-3RL

SCR 100V 800MA TO92-3

onsemi

3,203 -
MCR100-3RL

数据表

- TO-226-3, TO-92-3 Long Body, Formed Leads Tape & Reel (TR) Obsolete 100 V 800 mV 200 µA 1.7 V - 800 mA 5 mA 10 µA 10A @ 60Hz Sensitive Gate -40°C ~ 110°C - - Through Hole TO-92 (TO-226)
N0118GA,412

N0118GA,412

SCR 600V 800MA TO92-3

WeEn Semiconductors

3,840 -
N0118GA,412

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Active 600 V 800 mV 7 µA 1.95 V 510 mA 800 mA 5 mA 10 µA 8A, 9A Sensitive Gate - - - Through Hole TO-92-3
N0118GA,116

N0118GA,116

SCR 600V 800MA TO92-3

WeEn Semiconductors

7,593 -
N0118GA,116

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active 600 V 800 mV 7 µA 1.95 V 510 mA 800 mA 5 mA 10 µA 8A, 9A Sensitive Gate - - - Through Hole TO-92-3
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