桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBJ2501-06-G

GBJ2501-06-G

BRIDGE RECT 1PHASE 100V 4.2A GBJ

Comchip Technology

7,294 -
GBJ2501-06-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 100 V 4.2 A 1 V @ 12.5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2502-G

GBJ2502-G

BRIDGE RECT 1PHASE 200V 25A GBJ

Comchip Technology

7,092 -
GBJ2502-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 200 V 25 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2502-03-G

GBJ2502-03-G

BRIDGE RECT 1PHASE 200V 25A GBJ

Comchip Technology

3,580 -
GBJ2502-03-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 200 V 25 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2502-04-G

GBJ2502-04-G

BRIDGE RECT 1PHASE 200V 25A GBJ

Comchip Technology

2,625 -
GBJ2502-04-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 200 V 25 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2502-05-G

GBJ2502-05-G

BRIDGE RECT 1PHASE 200V 25A GBJ

Comchip Technology

8,385 -
GBJ2502-05-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 200 V 25 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2502-06-G

GBJ2502-06-G

BRIDGE RECT 1PHASE 200V 25A GBJ

Comchip Technology

8,052 -
GBJ2502-06-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 200 V 25 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2504-03-G

GBJ2504-03-G

BRIDGE RECT 1PHASE 400V 25A GBJ

Comchip Technology

5,104 -
GBJ2504-03-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 400 V 25 A 1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2504-04-G

GBJ2504-04-G

BRIDGE RECT 1PHASE 400V 25A GBJ

Comchip Technology

7,365 -
GBJ2504-04-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 400 V 25 A 1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2504-05-G

GBJ2504-05-G

BRIDGE RECT 1PHASE 400V 25A GBJ

Comchip Technology

3,514 -
GBJ2504-05-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 400 V 25 A 1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2504-06-G

GBJ2504-06-G

BRIDGE RECT 1PHASE 400V 25A GBJ

Comchip Technology

9,477 -
GBJ2504-06-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 400 V 25 A 1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2508-G

GBJ2508-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

2,840 -
GBJ2508-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2508-03-G

GBJ2508-03-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

7,772 -
GBJ2508-03-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2508-04-G

GBJ2508-04-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

4,340 -
GBJ2508-04-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2508-05-G

GBJ2508-05-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

4,384 -
GBJ2508-05-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2508-06-G

GBJ2508-06-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

6,899 -
GBJ2508-06-G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBUK8G

GBUK8G

BRIDGE RECT 1PHASE 380V 5.6A GBU

Diotec Semiconductor

3,343 -
GBUK8G

数据表

- 4-SIP, GBU Bulk Active Single Phase Standard 380 V 5.6 A 900 mV @ 1 mA 5 µA @ 380 V -50°C ~ 150°C (TJ) - - Through Hole GBU
GBUK8D

GBUK8D

BRIDGE RECT 1PHASE 190V 5.6A GBU

Diotec Semiconductor

2,020 -
GBUK8D

数据表

- 4-SIP, GBU Bulk Active Single Phase Standard 190 V 5.6 A 900 mV @ 1 mA 5 µA @ 190 V -50°C ~ 150°C (TJ) - - Through Hole GBU
GBJ2010

GBJ2010

BRIDGE RECT 1PHASE 1KV 20A GBJ

Diodes Incorporated

6,070 -
GBJ2010

数据表

- 4-SIP, GBJ Tube Discontinued at Digi-Key Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
GBJ2504

GBJ2504

BRIDGE RECT 1PHASE 400V 25A GBJ

Diodes Incorporated

6,290 -
GBJ2504

数据表

- 4-SIP, GBJ Tube Discontinued at Digi-Key Single Phase Standard 400 V 25 A 1.05 V @ 12.5 A 10 µA @ 400 V -65°C ~ 150°C (TJ) - - Through Hole GBJ
GBPC6005/1

GBPC6005/1

BRIDGE RECT 1PHASE 50V 3A GBPC6

Vishay General Semiconductor - Diodes Division

3,242 -
GBPC6005/1

数据表

- 4-Square, GBPC-6 Bulk Obsolete Single Phase Standard 50 V 3 A 1 V @ 3 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBPC6
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