桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
BU1006A-E3/45

BU1006A-E3/45

BRIDGE RECT 1PHASE 600V 3A BU

Vishay General Semiconductor - Diodes Division

5,339 -
BU1006A-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1006A-E3/51

BU1006A-E3/51

BRIDGE RECT 1PHASE 600V 3A BU

Vishay General Semiconductor - Diodes Division

4,373 -
BU1006A-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1006-E3/51

BU1006-E3/51

BRIDGE RECT 1PHASE 600V 3.2A BU

Vishay General Semiconductor - Diodes Division

3,847 -
BU1006-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008A-E3/45

BU1008A-E3/45

BRIDGE RECT 1PHASE 800V 3A BU

Vishay General Semiconductor - Diodes Division

4,118 -
BU1008A-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008A-E3/51

BU1008A-E3/51

BRIDGE RECT 1PHASE 800V 3A BU

Vishay General Semiconductor - Diodes Division

7,047 -
BU1008A-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008-E3/45

BU1008-E3/45

BRIDGE RECT 1PHASE 800V 3.2A BU

Vishay General Semiconductor - Diodes Division

4,881 -
BU1008-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 800 V 3.2 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010A-E3/45

BU1010A-E3/45

BRIDGE RECT 1PHASE 1KV 3A BU

Vishay General Semiconductor - Diodes Division

9,265 -
BU1010A-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010-E3/45

BU1010-E3/45

BRIDGE RECT 1PHASE 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division

5,684 -
BU1010-E3/45

数据表

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010-E3/51

BU1010-E3/51

BRIDGE RECT 1PHASE 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division

6,626 -
BU1010-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1206-E3/51

BU1206-E3/51

BRIDGE RECT 1PHASE 600V 3.4A BU

Vishay General Semiconductor - Diodes Division

6,077 -
BU1206-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.4 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1208-E3/51

BU1208-E3/51

BRIDGE RECT 1PHASE 800V 3.4A BU

Vishay General Semiconductor - Diodes Division

8,506 -
BU1208-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 800 V 3.4 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1210-E3/51

BU1210-E3/51

BRIDGE RECT 1PHASE 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division

6,301 -
BU1210-E3/51

数据表

- 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1006A-M3/51

BU1006A-M3/51

BRIDGE RECT 1PHASE 600V 10A BU

Vishay General Semiconductor - Diodes Division

3,989 -
BU1006A-M3/51

数据表

- 4-SIP, BU Tray Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1006-M3/51

BU1006-M3/51

BRIDGE RECT 1PHASE 600V 10A BU

Vishay General Semiconductor - Diodes Division

7,043 -
BU1006-M3/51

数据表

- 4-SIP, BU Tray Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008A-M3/51

BU1008A-M3/51

BRIDGE RECT 1PHASE 800V 10A BU

Vishay General Semiconductor - Diodes Division

5,246 -
BU1008A-M3/51

数据表

- 4-SIP, BU Tray Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008-M3/51

BU1008-M3/51

BRIDGE RECT 1PHASE 800V 10A BU

Vishay General Semiconductor - Diodes Division

3,102 -
BU1008-M3/51

数据表

- 4-SIP, BU Tray Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010A-M3/51

BU1010A-M3/51

BRIDGE RECT 1PHASE 1KV 10A BU

Vishay General Semiconductor - Diodes Division

5,773 -
BU1010A-M3/51

数据表

- 4-SIP, BU Tray Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010-M3/51

BU1010-M3/51

BRIDGE RECT 1PHASE 1KV 10A BU

Vishay General Semiconductor - Diodes Division

9,561 -
BU1010-M3/51

数据表

- 4-SIP, BU Tray Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1206-M3/51

BU1206-M3/51

BRIDGE RECT 1PHASE 600V 12A BU

Vishay General Semiconductor - Diodes Division

4,487 -
BU1206-M3/51

数据表

- 4-SIP, BU Tray Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1208-M3/51

BU1208-M3/51

BRIDGE RECT 1PHASE 800V 12A BU

Vishay General Semiconductor - Diodes Division

7,750 -
BU1208-M3/51

数据表

- 4-SIP, BU Tray Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
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