桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBU8K-5E3/51

GBU8K-5E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

6,187 -
GBU8K-5E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-5M3/51

GBU8K-5M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

2,150 -
GBU8K-5M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-7000M3/45

GBU8K-7000M3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

6,190 -
GBU8K-7000M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-7001M3/45

GBU8K-7001M3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

6,498 -
GBU8K-7001M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8KL-5301E3/45

GBU8KL-5301E3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

3,923 -
GBU8KL-5301E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8KL-5301E3/51

GBU8KL-5301E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

6,121 -
GBU8KL-5301E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8KL-5301M3/45

GBU8KL-5301M3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

8,838 -
GBU8KL-5301M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8KL-5301M3/51

GBU8KL-5301M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

7,825 -
GBU8KL-5301M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8KL-5302E3/45

GBU8KL-5302E3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

2,614 -
GBU8KL-5302E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8KL-5302M3/45

GBU8KL-5302M3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

3,592 -
GBU8KL-5302M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8M-7001E3/51

GBU8M-7001E3/51

BRIDGE RECT 1PHASE 1KV 3.9A GBU

Vishay General Semiconductor - Diodes Division

8,122 -
GBU8M-7001E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 1 kV 3.9 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8ML-7001M3/51

GBU8ML-7001M3/51

BRIDGE RECT 1PHASE 1KV 3.9A GBU

Vishay General Semiconductor - Diodes Division

3,833 -
GBU8ML-7001M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 1 kV 3.9 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8ML-7014M3/45

GBU8ML-7014M3/45

BRIDGE RECT 1PHASE 1KV 3.9A GBU

Vishay General Semiconductor - Diodes Division

8,799 -
GBU8ML-7014M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 1 kV 3.9 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GSIB1580-5402E3/45

GSIB1580-5402E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

6,496 -
GSIB1580-5402E3/45

数据表

- 4-SIP, GSIB-5S Tube Obsolete Single Phase Standard 800 V 3.5 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GSIB1580-5410E3/45

GSIB1580-5410E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

4,083 -
GSIB1580-5410E3/45

数据表

- 4-SIP, GSIB-5S Tube Obsolete Single Phase Standard 800 V 3.5 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GSIB2560L-803E3/45

GSIB2560L-803E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

6,930 -
GSIB2560L-803E3/45

数据表

- 4-SIP, GSIB-5S Tube Obsolete Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GSIB2580-5401E3/45

GSIB2580-5401E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

4,400 -
GSIB2580-5401E3/45

数据表

- 4-SIP, GSIB-5S Tube Obsolete Single Phase Standard 800 V 3.5 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GSIB2580-5402E3/45

GSIB2580-5402E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

7,210 -
GSIB2580-5402E3/45

数据表

- 4-SIP, GSIB-5S Tube Obsolete Single Phase Standard 800 V 3.5 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
MBL108S-01M3/I

MBL108S-01M3/I

BRIDGE RECT 1PHASE 800V 1A 4-SMD

Vishay General Semiconductor - Diodes Division

4,850 -
MBL108S-01M3/I

数据表

- 4-SMD, Gull Wing Tube Obsolete Single Phase Standard 800 V 1 A 950 mV @ 400 mA 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
KBL401G T0

KBL401G T0

BRIDGE RECT 1PHASE 50V 4A KBL

Taiwan Semiconductor Corporation

8,622 -
KBL401G T0

数据表

- 4-SIP, KBL Tray Discontinued at Digi-Key Single Phase Standard 50 V 4 A 1.1 V @ 4 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole KBL
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