桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBU8JL-5300M3/51

GBU8JL-5300M3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

8,464 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-5302E3/45

GBU8JL-5302E3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

2,833 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-5302M3/45

GBU8JL-5302M3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

2,777 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-5700E3/51

GBU8JL-5700E3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

3,383 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-5700M3/51

GBU8JL-5700M3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

6,584 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-5701E3/51

GBU8JL-5701E3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

4,774 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-5701M3/51

GBU8JL-5701M3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

2,119 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-6088E3/51

GBU8JL-6088E3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

2,272 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-6088M3/51

GBU8JL-6088M3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

3,005 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-7000E3/45

GBU8JL-7000E3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

6,209 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-7000M3/45

GBU8JL-7000M3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

4,032 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-7014E3/45

GBU8JL-7014E3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

7,532 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8JL-7014M3/45

GBU8JL-7014M3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division

7,567 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-3E3/51

GBU8K-3E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

5,236 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-3M3/51

GBU8K-3M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

9,483 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-4E3/51

GBU8K-4E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

5,705 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-4M3/51

GBU8K-4M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

6,079 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-5400M3/51

GBU8K-5400M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

3,277 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-5410E3/51

GBU8K-5410E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

4,152 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU8K-5410M3/51

GBU8K-5410M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division

8,929 -

-

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户