场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FDPC1012S

FDPC1012S

MOSFET 2N-CH 25V 13A PWRCLIP-33

Fairchild Semiconductor

6,672 -
FDPC1012S

数据表

- 8-PowerWDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 25V 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V 2.2V @ 250µA, 2.2V @ 1mA 8nC @ 4.5V, 25nC @ 4.5V 1075pF @ 13V, 3456pF @ 13V 800mW (Ta), 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Powerclip-33
VT6K1T2CR

VT6K1T2CR

MOSFET 2N-CH 20V 0.1A VMT6

Rohm Semiconductor

5,044 -
VT6K1T2CR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 100mA 3.5Ohm @ 100mA, 4.5V 1V @ 100µA - 7.1pF @ 10V 120mW 150°C (TJ) - - Surface Mount VMT6
HUFA76504DK8T

HUFA76504DK8T

MOSFET 2N-CH 80V 8SOIC

Fairchild Semiconductor

3,488 -
HUFA76504DK8T

数据表

UltraFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 80V - 200mOhm @ 2.5A, 10V 3V @ 250µA 10nC @ 10V 270pF @ 25V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
UPA2350BT1G-E4-A

UPA2350BT1G-E4-A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

520,000 -
UPA2350BT1G-E4-A

数据表

* - Bulk Active - - - - - - - - - - - - - - -
NDH8302P

NDH8302P

MOSFET 2P-CH 20V 2A SUPERSOT-8

Fairchild Semiconductor

36,000 -
NDH8302P

数据表

- 8-TSOP (0.130", 3.30mm Width) Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 2A (Ta) 130mOhm @ 2A, 4.5V 1V @ 250µA 11nC @ 4.5V 515pF @ 10V 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
VN2410M

VN2410M

MOSFET N-CH

Siliconix

22,750 -
VN2410M

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FDC6432SH

FDC6432SH

MOSFET N/P-CH 30V/12V 2.4A SSOT6

Fairchild Semiconductor

18,000 -
FDC6432SH

数据表

PowerTrench®, SyncFET™ SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 12V 2.4A, 2.5A 90mOhm @ 2.4A, 10V 3V @ 1mA 3.5nC @ 5V 270pF @ 15V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
SSF2215

SSF2215

MOSFET 2P-CH 20V 3A SOT23-6L

Good-Ark Semiconductor

5,526 -
SSF2215

数据表

- SOT-23-6 Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 20V 3A (Ta) 85mOhm @ 3A, 4.5V 1V @ 250µA 8nC @ 4.5V 510pF @ 15V 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
CPH5616-TL-E

CPH5616-TL-E

MOSFET N-CH

Sanyo

2,978 -

-

* - Bulk Active - - - - - - - - - - - - - - -
RFD20N03SM9AR4761

RFD20N03SM9AR4761

MOSFET N-CH 30V 20A

Harris Corporation

2,500 -

-

* - Bulk Active - - - - - - - - - - - - - - -
FDMS3602AS

FDMS3602AS

MOSFET 2N-CH 25V 15A/26A POWER56

onsemi

3,757 -
FDMS3602AS

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 15A, 26A 5.6mOhm @ 15A, 10V 3V @ 250µA 27nC @ 10V 1770pF @ 13V 2.2W, 2.5W -55°C ~ 150°C (TJ) - - Surface Mount Power56
G300N04S2

G300N04S2

MOSFET 2N-CH 40V 5.5A 8SOP

Goford Semiconductor

4,000 -
G300N04S2

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 5.5A (Tc) 30mOhm @ 3A, 10V 2.5V @ 250µA 10nC @ 10V 522pF @ 20V 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
PJX8872B_R1_00001

PJX8872B_R1_00001

MOSFET 2N-CH 60V 0.2A SOT563

Panjit International Inc.

2,950 -
PJX8872B_R1_00001

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 200mA (Ta) 3Ohm @ 600mA, 10V 2.5V @ 250µA 0.82nC @ 4.5V 34pF @ 25V 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
UPA2352T1P-E4-A

UPA2352T1P-E4-A

MOSFET 2N-CH 24V 4A LGA

Renesas Electronics Corporation

310,000 -
UPA2352T1P-E4-A

数据表

- 4-XFLGA Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive 24V 4A (Ta) 43mOhm @ 2A, 4.5V 1.5V @ 1mA 5.7nC @ 4V 330pF @ 10V 750mW (Ta) 150°C - - Surface Mount 4-EFLIP-LGA (1.4x1.4)
FDW2509NZ

FDW2509NZ

MOSFET 2N-CH 20V 7.1A 8TSSOP

Fairchild Semiconductor

100,000 -
FDW2509NZ

数据表

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 7.1A (Ta) 20mOhm @ 7.1A, 4.5V 1.5V @ 250µA 19nC @ 4.5V 1263pF @ 10V 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
IRF810

IRF810

MOSFET N-CH 500V 8A

Harris Corporation

93,400 -

-

* - Bulk Active - - - - - - - - - - - - - - -
NTLGD3502NT1G

NTLGD3502NT1G

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

onsemi

7,754 -
NTLGD3502NT1G

数据表

- 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.3A, 3.6A 60mOhm @ 4.3A, 4.5V 2V @ 250µA 4nC @ 4.5V 480pF @ 10V 1.74W -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (3x3)
MTD3N25E1

MTD3N25E1

MOSFET N-CH 250V 3A

onsemi

13,650 -
MTD3N25E1

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FDMA1028NZ

FDMA1028NZ

MOSFET 2N-CH 20V 3.7A 6MICROFET

Fairchild Semiconductor

10,778 -
FDMA1028NZ

数据表

PowerTrench® 6-VDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.7A 68mOhm @ 3.7A, 4.5V 1.5V @ 250µA 6nC @ 4.5V 340pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
FDMS8025AS

FDMS8025AS

MOSFET N-CH

Fairchild Semiconductor

9,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
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